ST STP11NM60FD, STB11NM60FD, STP11NM60FDFP, STB11NM60FD-1 User Manual
查询STB11NM60FD-1供应商
STP11NM60FD- STB11NM60FD
STP11NM60FDFP - STB11NM60FD-1
N-CHANNEL 600V-0.40Ω-11ATO-220/TO-220FP/I2PAK/D2PAK
FDmesh™Power MOS FET (with FAST DIODE)
TYPE V
STP11NM60FD
STP11NM60FDFP
STB11NM60FD
STB11NM60FD-1
TYPICAL RDS(on) = 0.40Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AN D GATE
DSS
600 V
600 V
600 V
600 V
R
DS(on)
<0.45Ω
<0.45Ω
<0.45Ω
<0.45Ω
I
D
11 A
11 A
11 A
11 A
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The F Dmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
APPLICATIONS
ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
3
2
TO-220
D2PAK
1
3
1
TO-220FP
2
I
INTERNAL SCHEMATIC DIAGRAM
PAK
3
2
1
3
2
1
ORDER CODES
PART NUMBER MARKING PACKAGE PACKAGING
STP11NM60FD P11NM60FD TO-220 TUBE
STP11NM60FDFP P11NM60FDFP TO-220FP TUBE
STB11NM60FDT4 B11NM60FD
STB11NM60FD-1 B11NM60FD
2
PAK
D
2
I
PAK
TAPE & REEL
TUBE
1/13February 2004
STP11NM60FD - STP11N M 60FDF P - STB11NM60FD - ST B 11NM60FD -1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C
Drain Current (continuos) at TC=100°C
Drain Current (pulsed) 44 44 (*) A
Total Dissipation at TC=25°C
Derating Factor 0.88 0.28 W/°C
1) Peak Diode Recovery voltage slope 20 V/ns
dv/dt (
V
ISO
T
stg
T
j
(•)Pulse width limited by safe operating area
<11A, di/dt<400A/µs, VDD<V
(1)I
SD
(*)Limited only by maximum temperature allowed
Insulation Winthstand Voltage (DC) -- 2500 V
Storage Temperature
Max. Operating Junction Temperature
(BR)DSS,TJ<TJMAX
STP11NM60FD
STB11NM60FD
STB11NM60FD-1
11 11 (*) A
77(*)A
160 35 W
STP11NM60FDFP
600 V
600 V
–65 to 150 °C
THERMAL DATA
TO-220/I
2
PAK
2
PAK
D
Rthj-case Thermal Resistance Junction-case Max 0.78 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
TO-220FP
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
=25°C, ID=IAR,VDD=35V)
j
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
5.5 A
350 mJ
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID= 250 µA, VGS= 0 600 V
V
=MaxRating
DS
V
=MaxRating,TC= 125 °C
DS
V
=±30V ±100 nA
GS
V
DS=VGS,ID
= 250 µA
34
1µA
100 µA
5V
VGS=10V,ID= 5.5 A 0.40 0.45 Ω
2/13
STP11NM60FD - ST P11N M 60F D FP - STB11NM60FD - STB11NM60FD-1
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
D(on)xRDS(on)max,
ID=5.5A
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 208 pF
Reverse Transfer
V
=25V,f=1MHz,VGS=0
DS
Capacitance
C
oss eq.
(2) Equivalent Output
VGS=0V,VDS= 0V to 400V 100 pF
Capacitance
R
G
Gate Input Resistance f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. C
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time 16 ns
Total Gate Charge
Gate-Source Charge 7.8 nC
Gate-Drain Charge 13 nC
V
=250V,ID=5.5A
DD
RG=4.7Ω VGS=10V
(see test circuit, Figure 3)
V
=400V,ID=11A,
DD
VGS=10V
5.2 S
1000 pF
28 pF
3 Ω
when VDSincreases from 0 to 80%
oss
20 ns
28 40 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
Off-voltage Rise Time
t
f
c
FallTime 15 ns
Cross-over Time 24 ns
V
=400V,ID=11A,
DD
R
=4.7Ω, VGS= 10V
G
(seetest circuit,Figure5)
10 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 11 A
(2)
Source-drain Current (pulsed) 44 A
ForwardOnVoltage
Reverse Recovery Time
Reverse Recovery Charge 1.1 µC
ISD=11A,VGS=0
= 11A, di/dt = 100A/µs,
I
SD
VDD=50V
(see test circuit, Figure 5)
190 ns
Reverse Recovery Current 14.5 A
1.5 V
3/13
STP11NM60FD - STP11N M 60FDF P - STB11NM60FD - ST B 11NM60FD -1
Safe Operating for TO-220/I2PAK/D2PAK Safe Operating Area for TO-220FP
Thermal Impedance for TO-220FPThermal Impedance for TO-220/I2PAK
4/13
Transfer CharacteristicsOutput Characteristics
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