ST STP11NM60A, STP11NM60AFP, STB11NM60A-1 User Manual
查询STB11NM60A-1供应商
N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK
STP11NM60A
STP11NM6 0AFP - STB11NM6 0A- 1
MDmesh™Power MOSFET
TYPE V
STP11NM60A
STP11NM60AFP
STB11NM60A-1
n
TYPICAL RDS(on) = 0.4Ω
n
HIGH dv/dt
n
LOW INPUT CAPACITANCE AND GATE
DSS
600 V
600 V
600 V
R
DS(on)
<0.45Ω
<0.45Ω
<0.45Ω
I
D
11 A
11 A
11 A
CHARGE
n
LOW GATE INPUT RESIST ANC E
DESCRIPTION
The MDmesh™
is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt. The adoption
of the Company’s proprietary strip technique yields
overall dynamic performance that is significantly
better than that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
TO-220
I2PAK
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP11NM60A P11NM60A TO-220 TUBE
STP11NM60AFP P11NM60AFP TO-220FP TUBE
STB11NM60A-1 B11NM60A
I
2
PAK
TUBE
1/11March 2002
STP11NM60A/STP11NM60AF P/ST B 11NM60A-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP11NM60A
STB11NM60A-1
V
I
V
V
DM
P
DS
DGR
GS
I
D
I
D
TOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
600 V
600 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
(l)
Drain Current (pulsed) 44 44 (*) A
Total Dissipation at TC = 25°C
11 11 (*) A
7 7 (*) A
110 35 W
Derating Factor 0.88 0.28 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
V
ISO
T
j
T
stg
(l) Pulse wi dth limited by saf e operating ar ea
(1) I
≤11A, di/dt ≤200A/µs, VDD ≤ V
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
, Tj ≤ T
(BR)DSS
JMAX.
-55 to 150
-55 to 150
STP11NM60AF P
°C
°C
THERMA L D ATA
2
TO-220 / I
PAK
Rthj-case Thermal Resistance Junction-case Max 1.13 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300
TO-220-FP
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 600 V
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C
V
= ± 20V ±100 nA
GS
V
= VGS, ID = 250µA
DS
234V
1
10
VGS = 10V, ID = 5.5 A 0.4 0.45 Ω
°C
µA
µA
2/11
STP11NM60A/STP11NM60AF P/ST B 11N M 60A-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15 V, ID= 5.5 A 10 S
g
fs
C
iss
C
oss
C
rss
C
oss eq.
R
G
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Input Capacitance
= 25V, f = 1 MHz, VGS = 0 1211
V
DS
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
VGS = 0V, VDS = 0V to 480V 116 pF
Capacitance
Gate Input Resistance f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Turn-on Delay Time
Rise Time
VDD = 300 V, ID = 5.5 A
RG= 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
Total Gate Charge
Gate-Source Charge
VDD = 480V, ID = 11 A,
VGS = 10V
Gate-Drain Charge
248
21
1.9 Ω
14
15
35
49
9
14
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 480V, ID = 11 A,
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
V
DD
RG=4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
39
10
20
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by safe operating area .
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
V
.
DSS
ISD = 11 A, VGS = 0
I
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
= 11 A, di/dt = 100A/µs
560
5.7
20.5
when VDS increase s fr om 0 to 80%
oss
11
44
1.5 V
ns
ns
ns
A
A
ns
µC
A
3/11
STP11NM60A/STP11NM60AF P/ST B 11NM60A-1
Safe Operating Area for TO-220FPSafe Operating Area for TO-220 / I2PAK
Thermal Impedan ce for TO- 2 20 / I2PAK
Thermal Impedance for TO-220FP
Transfer CharacteristicsOutput Characteristics
4/11
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