ST STP11NM60A, STP11NM60AFP, STB11NM60A-1 User Manual

STB11NM60A-1

STP11NM60A STP11NM60AFP - STB11NM60A-1

N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET

TYPE	VDSS	RDS(on)	ID
STP11NM60A	600 V	<0.45Ω	11 A
STP11NM60AFP	600 V	<0.45Ω	11 A
STB11NM60A-1	600 V	<0.45Ω	11 A

nTYPICAL RDS(on) = 0.4Ω

nHIGH dv/dt

nLOW INPUT CAPACITANCE AND GATE CHARGE

nLOW GATE INPUT RESISTANCE

DESCRIPTION

3	1 2 3
2
1
TO-220	I2PAK
	3
	2
	1
	TO-220FP

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal

layout. The resulting product has an outstanding low INTERNAL SCHEMATIC DIAGRAM on-resistance, impressively high dv/dt. The adoption

of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

ORDERING INFORMATION

SALES TYPE	MARKING	PACKAGE	PACKAGING
STP11NM60A	P11NM60A	TO-220	TUBE
STP11NM60AFP	P11NM60AFP	TO-220FP	TUBE
STB11NM60A-1	B11NM60A	I2PAK	TUBE

March 2002

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STP11NM60A/STP11NM60AFP/STB11NM60A-1

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter		Value			Unit
			STP11NM60A		STP11NM60AFP
			STB11NM60A-1
VDS	Drain-source Voltage (VGS = 0)		600			V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)		600			V
VGS	Gatesource Voltage		± 30			V
ID	Drain Current (continuous) at TC = 25°C		11		11 (*)	A
ID	Drain Current (continuous) at TC = 100°C		7		7 (*)	A
IDM (l)	Drain Current (pulsed)		44		44 (*)	A
PTOT	Total Dissipation at TC = 25°C		110		35	W
	Derating Factor		0.88		0.28	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope		15			V/ns
VISO	Insulation Withstand Voltage (DC)		-		2500	V
Tj	Operating Junction Temperature		-55 to 150			°C
Tstg	Storage Temperature		-55 to 150			°C

(l) Pulse width limited by safe operating area

(1) ISD ≤11A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

		TO-220 / I2PAK	TO-220-FP
Rthj-case	Thermal Resistance Junction-case Max	1.13	3.57	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	62.5		°C/W
Tl				°C
	Maximum Lead Temperature For Soldering Purpose	300

ON/OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	600			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			10	µA
IGSS	Gate-body Leakage	VGS = ± 20V			±100	nA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250µA	2	3	4	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 5.5 A		0.4	0.45	Ω
	Resistance

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STP11NM60A/STP11NM60AFP/STB11NM60A-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS = 15 V, ID = 5.5 A		10		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		1211		pF
Coss	Output Capacitance			248		pF
Crss	Reverse Transfer			21		pF
	Capacitance
Coss eq. (3)	Equivalent Output	VGS = 0V, VDS = 0V to 480V		116		pF
	Capacitance
RG	Gate Input Resistance	f=1 MHz Gate DC Bias = 0		1.9		Ω
		Test Signal Level = 20mV
		Open Drain
SWITCHING ON
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 300 V, ID = 5.5 A		14		ns
tr	Rise Time	Ω		15		ns
		RG = 4.7 VGS = 10 V
		(Resistive Load see, Figure 3)
Qg	Total Gate Charge	VDD = 480V, ID = 11 A,		35	49	nC
Qgs	Gate-Source Charge	VGS = 10V		9		nC
Qgd	Gate-Drain Charge			14		nC
SWITCHING OFF
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tr(Voff)	Off-voltage Rise Time	VDD = 480V, ID = 11 A,		39		ns
tf	Fall Time	RG = 4.7Ω, VGS = 10V		10		ns
tc	Cross-over Time	(Inductive Load see, Figure 5)		20		ns
SOURCE DRAIN DIODE
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
ISD	Source-drain Current				11	A
ISDM (2)	Source-drain Current (pulsed)				44	A
VSD (1)	Forward On Voltage	ISD = 11 A, VGS = 0			1.5	V
trr	Reverse Recovery Time	ISD = 11 A, di/dt = 100A/µs		560		ns
Qrr	Reverse Recovery Charge	VDD = 100V, Tj = 150°C		5.7		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)		20.5		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

3.Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

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STP11NM60A/STP11NM60AFP/STB11NM60A-1

Safe Operating Area for TO-220 / I2PAK

Safe Operating Area for TO-220FP

Thermal Impedance for TO-220 / I2PAK

Thermal Impedance for TO-220FP

Output Characteristics

Transfer Characteristics

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