ST STP11NK50Z, STP11NK50ZFP, STB11NK50Z User Manual
1/12June 2003
STP11NK50Z - STP11NK50ZFP
STB11NK50Z
N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D
2
PAK
Zener-Protected SuperMESH™Power MOSFET
■ TYPICAL R
DS
(on) = 0.48 Ω
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSICCAPACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL (D
2
PAK VERSION)
DESCRIPTION
The SuperME SH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak-
en to ensure a very good dv/dt capability fo r the
most demanding applications. Such series com ple-
ments S T full range of hi gh voltage MOSFETs in-
cluding revolutionary MDm es h™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
Pw
STB11NK50Z
STP11NK50Z
STP11NK50ZFP
500 V
500 V
500 V
< 0.52 Ω
< 0.52 Ω
< 0.52 Ω
10 A
10 A
10 A
125 W
125 W
30 W
SALES TYPE MARKING PACKAGE PACKAGING
STB11NK50ZT4 B11NK50Z
D
2
PAK
TAPE & REEL
STP11NK50Z P11NK50Z TO-220 TUBE
STP11NK50ZFP P11NK50ZFP TO-220FP TUBE
TO-220 TO-220FP
1
2
3
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
查询STB11NK50Z供应商
STP11NK50Z - STP11NK50ZF P - STB11NK50Z
2/12
ABSOLUTE MAXIMUM RATINGS
(
) Pulse width limited by safe operating area
(1) I
SD
≤10A, di/dt ≤200A/µs,V
DD
≤ V
(BR)DSS
,T
j
≤T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integ rated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
TO-220 / D
2
PAK
TO-220FP
V
DS
Drain-source Voltage (V
GS
=0)
500 V
V
DGR
Drain-gate Voltage (R
GS
=20k
Ω
)
500 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at T
C
= 25°C
10 10(*) A
I
D
Drain Current (continuous) at T
C
= 100°C
6.3 6.3(*) A
I
DM
(
)
Drain Current (pulsed) 40 40(*) A
P
TOT
Total Dissipation at T
C
= 25°C
125 30 W
Derating Factor 1 0.24 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
Viso Insulation Withstand Voltage (DC) -- 2500 V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220 / D
2
PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1 4.2 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
10 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
=I
AR
,V
DD
=50V)
190 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 30 V
3/12
STP11NK50Z - S TP11NK50Z FP - STB11NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1mA, V
GS
= 0 500 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 20V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
,I
D
= 100µA
3 3.75 4.5 V
R
DS(on)
Static Drain-source On
Resistance
V
GS
=10V,I
D
= 5 A 0.48 0.52 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance V
DS
=15V
,
I
D
= 5 A 7.7 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=25V,f=1MHz,V
GS
= 0 1390
173
42
pF
pF
pF
C
oss eq.
(3) Equivalent Output
Capacitance
V
GS
=0V,V
DS
= 0V to 400V 110 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
=250V,I
D
= 5.5 A
R
G
= 4.7Ω V
GS
=10V
(Resistive Load see, Figure 3)
14.5
18
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=400V,I
D
= 11.4 A,
V
GS
=10V
49
10
25
68
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 250 V, I
D
= 5.5 A
R
G
=4.7ΩV
GS
=10V
(Resistive Load see, Figure 3)
41
15
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400V, I
D
= 11.4 A,
R
G
=4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
11.5
12
27
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
10
40
A
A
V
SD
(1)
Forward On Voltage
I
SD
=10A,V
GS
=0
1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 10 A, di/dt = 100A/µs
V
DD
=36V,T
j
= 150°C
(see test circuit, Figure 5)
308
2.4
16
ns
nC
A
STP11NK50Z - STP11NK50ZF P - STB11NK50Z
4/12
Safe Operating Area For TO-220 / D2PAK
Output Characteristics
Thermal Impedance For TO-220 / D2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Transfer Characteristics
Loading...