ST STP11NK40Z, STP11NK40ZFP, STB11NK40Z User Manual
1/12April 2003
STP11NK40Z - STP11NK40ZFP
STB11NK40Z
N-CHANNEL 400V - 0.49Ω - 9A TO-220/TO-220FP/D
2
PAK
Zener-Protected SuperMESH™Power MOSFET
■ TYPICAL R
DS
(on) = 0.49 Ω
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSICCAPACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak-
en to ensure a very good dv/dt capability for the
most dem anding applications. Such series comple-
ments S T full range of high voltage MOSFETs in-
cluding revolutionary MDmes h™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
Pw
STP11NK40Z
STP11NK40ZFP
STB11NK40Z
400 V
400 V
400 V
< 0.55 Ω
< 0.55 Ω
< 0.55 Ω
9A
9A
9A
110 W
30 W
110 W
SALES TYPE MARKING PACKAGE PACKAGING
STP11NK40Z P11NK40Z TO-220 TUBE
STP11NK40ZFP P11NK40ZFP TO-220FP TUBE
STB11NK40ZT4 B11NK40Z
D
2
PAK
TAPE & REEL
TO-220 TO-220FP
1
2
3
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
查询STB11NK40Z供应商
STP11NK40Z - STP11NK40ZF P - STB11NK40Z
2/12
ABSOLUTE MAXIMUM RATINGS
(
) Pulse width limited by safe operating area
(1) I
SD
≤9A, di/dt ≤200A/µs, V
DD
≤ V
(BR)DSS
,T
j
≤T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in bac k - to -b ac k Zener diodes have specifically been des igned to enhance not only the device’s
ESD capability, but als o to make them safely absorb possible voltage transients that may occasional ly be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
STP11NK40Z
STB11NK40Z
STP11NK40ZFP
V
DS
Drain-source Voltage (V
GS
=0)
400 V
V
DGR
Drain-gate Voltage (R
GS
=20kΩ)
400 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at T
C
= 25°C
9 9(*) A
I
D
Drain Current (continuous) at T
C
= 100°C
5.67 5.67(*) A
I
DM
(
)
Drain Current (pulsed) 36 36(*) A
P
TOT
Total Dissipation at T
C
= 25°C
110 30 W
Derating Factor 0.88 0.24 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3500 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
Viso Insulation Withstand Voltage (DC) -- 2500 V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
D
2
PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
9A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
=I
AR
,V
DD
=50V)
190 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 30 V
3/12
STP11NK40Z - S TP11NK40Z FP - STB11NK40Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHE RWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
=1mA,V
GS
= 0 400 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 20 V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
,I
D
= 100 µA
3 3.75 4.5 V
R
DS(on)
Static Drain-source On
Resistance
V
GS
=10V,I
D
= 4.5 A 0.49 0.55 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance V
DS
=15V
,
I
D
= 4.5 A 5.8 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=25V,f=1MHz,V
GS
= 0 930
140
30
pF
pF
pF
C
oss eq.
(3) Equivalent Output
Capacitance
V
GS
=0V,V
DS
=0Vto400V 78 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
=200V,I
D
= 4.5 A
R
G
= 4.7Ω V
GS
=10V
(Resistive Load see, Figure 3)
20
20
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=320V,I
D
=9 A,
V
GS
=10V
32
6
18.5
45
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
=200 V, I
D
= 4.5 A
R
G
=4.7ΩV
GS
=10V
(Resistive Load see, Figure 3)
40
18
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 320 V, I
D
=9A,
R
G
=4.7Ω, V
GS
=10V
(Inductive Load see, Figure 5)
15
17
30
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
9
36
A
A
V
SD
(1) Forward On Voltage I
SD
= 9 A, V
GS
=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 9 A, di/dt = 100 A/µs
V
DD
=45V,T
j
= 150°C
(see test circuit, Figure 5)
225
1.6
14
ns
µC
A
STP11NK40Z - STP11NK40ZF P - STB11NK40Z
4/12
Safe Operating Area For TO-220/D2PAK
Safe Operating Area For TO-220FP
Transfer Characteristics
Output Characteristics
Thermal Impedance For TO-220FP
Thermal Impedance For TO-220/D2PAK
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