ST STP11NK40Z, STP11NK40ZFP, STB11NK40Z User Manual

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N-CHANNEL 400V - 0.49Ω - 9A TO-220/TO-220FP/D2PAK

STP11NK40Z - STP11NK40ZFP

STB11NK40Z

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP11NK40Z
STP11NK40ZFP
STB11NK40Z

■ TYPICAL R

■ EXTREMELY HIGHdv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSICCAPACITANCES

■ VERY GOOD MANUFACTURING

400 V
400 V
400 V

(on) = 0.49 Ω

DS

DSS

R

DS(on)

< 0.55 Ω
< 0.55 Ω
< 0.55 Ω

I

D

9A
9A
9A

Pw

110 W

30 W

110 W

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak­en to ensure a very good dv/dt capability for the
most dem anding applications. Such series comple­ments S T full range of high voltage MOSFETs in­cluding revolutionary MDmes h™ products.

TO-220 TO-220FP

3

1

D2PAK

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LIGHTING

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP11NK40Z P11NK40Z TO-220 TUBE

STP11NK40ZFP P11NK40ZFP TO-220FP TUBE
STB11NK40ZT4 B11NK40Z

2

PAK

D

TAPE & REEL

1/12April 2003

STP11NK40Z - STP11NK40ZF P - STB11NK40Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP11NK40Z
STB11NK40Z

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

400 V

400 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 36 36(*) A
Total Dissipation at TC= 25°C

9 9(*) A

5.67 5.67(*) A

110 30 W

Derating Factor 0.88 0.24 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3500 V

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

Viso Insulation Withstand Voltage (DC) -- 2500 V

T

j

T

stg

() Pulse width limited by safe operating area

≤9A, di/dt ≤200A/µs, VDD≤ V

(1) I

SD

(*) Limited only by maximum temperature allowed

Operating Junction Temperature
Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55 to 150

-55 to 150

STP11NK40ZFP

°C
°C

THERMAL DATA

TO-220

2

PAK

D

Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

TO-220FP

300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

E

AS

Single Pulse Avalanche Energy
(starting T

max)

j

= 25 °C, ID=IAR,VDD=50V)

j

9A

190 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in bac k - to -b ac k Zener diodes have specifically been des igned to enhance not only the device’s
ESD capability, but als o to make them safely absorb possible voltage transients that may occasional ly be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integrated Zener diodes thus avoid the
usage of external components.

2/12

STP11NK40Z - S TP11NK40Z FP - STB11NK40Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHE RWISE SPECIFIED)

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID= 4.5 A 5.8 S

g

fs

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

C

oss eq.

C

iss

C

oss

C

rss

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

ID=1mA,VGS= 0 400 V

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20 V ±10 µA

GS

V

DS=VGS,ID

= 100 µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 4.5 A 0.49 0.55 Ω

=25V,f=1MHz,VGS= 0 930

V

DS

140

30

VGS=0V,VDS=0Vto400V 78 pF

VDD=200V,ID= 4.5 A
RG= 4.7Ω VGS=10V

20
20

(Resistive Load see, Figure 3)

=320V,ID=9 A,

V
V

DD
GS

=10V

32

6

45

18.5

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD=200 V, ID= 4.5 A
R

=4.7ΩVGS=10V

G

40
18

(Resistive Load see, Figure 3)

t

r(Voff)

t
t

Off-voltage Rise Time

f

c

Fall Time
Cross-over Time

= 320 V, ID=9A,

V

DD

RG=4.7Ω, VGS=10V
(Inductive Load see, Figure 5)

15
17
30

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

9

36

I

SDM

I

SD

Source-drain Current

(2)

Source-drain Current (pulsed)

VSD(1) Forward On Voltage ISD= 9 A, VGS=0 1.6 V

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

= 9 A, di/dt = 100 A/µs

I

SD

VDD=45V,Tj= 150°C
(see test circuit, Figure 5)

225

1.6
14

when VDSincreases from 0 to 80%

oss

ns
ns

ns
ns
ns

A
A

ns

µC

A

3/12

STP11NK40Z - STP11NK40ZF P - STB11NK40Z

Safe Operating Area For TO-220/D2PAK

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220/D2PAK

Thermal Impedance For TO-220FP

Output Characteristics

4/12

Transfer Characteristics

STP11NK40Z - S TP11NK40Z FP - STB11NK40Z

Transconductance

Gate Charge vs Gate-so urc e V oltage

Static Drain-source O n Resistance

Capacitance Variations

Normalized Gate Threshold Voltage vs Temp.

Normalized On Resistance vs Temperature

5/12

STP11NK40Z - STP11NK40ZF P - STB11NK40Z

Source-drain Diode Forward Characteristics

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Temperature

6/12

STP11NK40Z - S TP11NK40Z FP - STB11NK40Z

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Induct ive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/12

STP11NK40Z - STP11NK40ZF P - STB11NK40Z

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/12

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

STP11NK40Z - S TP11NK40Z FP - STB11NK40Z

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/12

STP11NK40Z - STP11NK40ZF P - STB11NK40Z

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0º 8º

3

10/12

1

STP11NK40Z - S TP11NK40Z FP - STB11NK40Z

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10. 5 10.7 0.413 0.421
B0 15.7 15 .9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

11/12

STP11NK40Z - STP11NK40ZF P - STB11NK40Z

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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