ST STP10NK70Z, STP10NK70ZFP User Manual

查询STP10NK70Z供应商

N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP

STP10NK70Z

STP10NK70ZFP

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP10NK70Z
STP10NK70ZFP

■ TYPICAL R

■ EXTREMELY HIGHdv/dt CAPABILITY

■ IMPROVED ESD CAPABILITY

■ 100% AVALANCHE RA TED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSICCAPACITANCES

■ VERY GOOD MANUFACTURING

700 V
700 V

(on) = 0.75 Ω

DS

DSS

R

DS(on)

< 0.85 Ω
< 0.85 Ω

I

D

8.6 A

8.6 A

Pw

150 W

35 W

REPEATIBILITY

DESCRIPTION

The SuperMESH ™ series is obtained through an
extreme optimization of ST ’s well established strip­based PowerMESH™ layout. In addition to pus hing
on-resistance significantly down, special careis tak­en to ensure a very good dv /dt capability fo r the
most demanding applicat ions. Such series compl e­ments ST full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP10NK70Z P10NK70Z TO-220 TUBE

STP10NK70ZFP P10NK70ZFP TO-220FP TUBE

1/10October 2002

STP10NK70Z/STP10NK70ZFP

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP10NK70Z STP10NK70ZFP

V

DS

V

DGR

V

GS

I

D

I

D

IDM()

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area
(1) I

≤8.6A, di/dt ≤200A/µs, VDD≤ V

SD

(*) Limited only by maximum temperature allowed

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

700 V

700 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

8.6 8.6 (*) A

5.4 5.4 (*) A
Drain Current (pulsed) 34 34 (*) A
Total Dissipation at TC= 25°C

150 35 W
Derating Factor 1.20 0.28 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 KV

Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55 to 150

-55 to 150

°C
°C

THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

8.6 A

350 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this r es pec t the Zener voltage is appropriate to ac hieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

2/10

STP10NK70Z/STP10NK70ZFP

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

I

GSS

V

GS(th)

R

DS(on)

DSS

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID= 4.5 A 7.7 S

g

fs

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

C

oss eq.

C

iss

C

oss

C

rss

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

ID=1mA,VGS= 0 700 V

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 4.5 A 0.75 0.85 Ω

=25V,f=1MHz,VGS= 0 2000

V

DS

190

41

VGS=0V,VDS= 0V to 560V 98 pF

VDD=350V,ID= 4.5 A
RG= 4.7Ω VGS=10V

22
19

(Resistive Load see, Figure 3)

=560V,ID=9A,

V

DD

V

=10V

GS

64
12
33

90

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 350 V, ID= 4.5 A
R

=4.7ΩVGS=10V

G

46
19

(Resistive Load see, Figure 3)

t

r(Voff)

t
t

Off-voltage Rise Time

f

c

Fall Time
Cross-over Time

= 560 V, ID=9A,

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)

11
10
22

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 8.6 A, VGS=0
I

SD

VDD=35V,Tj= 150°C
(see test circuit, Figure 5)

= 9 A, di/dt = 100A/µs

720

5.4
15

when VDSincreases from 0 to 80%

oss

8.6
34

1.6 V

ns
ns

ns
ns
ns

A
A

ns

µC

A

3/10