ST STP10NK60Z, STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z User Manual

查询STB10NK60Z供应商

N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D2PAK/I2PAK/TO-247

STP10NK60Z/FP, STB10NK60Z/-1

STW10NK60Z

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP10NK60Z
STP10NK60ZFP
STB10NK60Z
STB10NK60Z-1
STW10NK60Z

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING

600 V
600 V
600 V
600 V
600 V

(on) = 0.65 Ω

DS

DSS

R

DS(on)

< 0.75 Ω
< 0.75 Ω
< 0.75 Ω
< 0.75 Ω
< 0.75 Ω

I

D

10 A
10 A
10 A
10 A
10 A

Pw

115 W

35 W
115 W
115 W
156 W

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip­based PowerME SH™ layout. In addition to pushing
on-resistance significantly down, special care is tak­en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple­ments ST full range of high voltage MOSFETs i n­cluding revolutionary MDmesh™ products.

TO-220

D2PAK

3

1

1

I2PAK

2

TO-220FP

3

TO-247

INTERNAL SCHEMATIC DIAGRAM

3

2

1

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LIGHTING

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP10NK60Z P10NK60Z TO-220 TUBE

STP10NK60ZFP P10NK60ZFP TO-220FP TUBE
STB10NK60ZT4 B10NK60Z

STB10NK60Z-1

B10NK60Z

STW10NK60Z W10NK60Z TO-247 TUBE

2

PAK

D

2

I

PAK

TAPE & REEL

TUBE

1/14July 2003

STP10NK60Z-STP10NK60ZFP, STB10NK60Z, ST B10NK60Z -1, S TW10NK 60Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

TO-220/

2

PAK/I2PAK

D

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ) 600 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C 10 10 (*) 10 A
Drain Current (continuous) at TC= 100°C 5.7 5.7 (*) 5.7 A

()

Drain Current (pulsed) 36 36 (*) 36 A
Total Dissipation at TC= 25°C

115 35 156 W

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS
D
D

Derating Factor 0.92 0.28 1.25 W/°C

V

ESD(G-S)

Gate source ESD
(HBM-C=100pF, R=1.5KΩ)

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area
(1) I

≤10A, di/dt ≤200A/µs,VDD≤ V

SD

Insulation Withstand Voltage (DC)
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

- 2500 - V

THERMAL DATA

TO-220

2

PAK

I

Rthj-case Thermal Resistance Junction-case Max 1.09 3.6 0.8 °C/W

Rthj-pcb Thermal Resistance Junction-pcb Max

(Whenmountedon minimum Footprint)

Rthj-amb Thermal Resistance Junction-ambient

Max

T

l

Maximum Lead Temperature For
Soldering Purpose

2

PAK

D

60 °C/W

TO-220FP TO-247

600 V

4000 V

-55 to 150 °C

(*)Limited only by maximumtemperatureallowed

TO-220FP TO-247 Unit

62.5 50 °C/W
300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

E

AS

E

AR

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

Repetitive Avalanche Energy
(Pulse with limited by T

max)

j

max.)

j

9A

300 mJ

3.5 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIOD ES

The built-in back -to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb pos sible voltage trans ients that may occas ionally be
applied from gate to source. In this respect the Zener v olt age is appropriate to achieve an efficient and
cost-effective intervention toprotectthedevice’sintegrity.These integrated Zener diodes thus avoid
the usage of external components.

2/14

STP10NK60Z-STP10NK60ZFP, STB10N K60 Z, STB10N K60Z-1, ST W 10N K60Z

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SP ECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=1mA,VGS= 0 600 V

Breakdown Voltage

I

I

GSS

V

GS(th)

R

DS(on)

DSS

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 4.5 A 0.65 0.75 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID= 4.5 A 7.8 S

g

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

=25V,f=1MHz,VGS= 0 1370

V

DS

156

37

VGS=0V,VDS= 0V to 480V 90 pF

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD=300V,ID=4A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)

=480V,ID=8A,

V

DD

V

=10V

GS

20
20

50
10
25

70

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 300 V, ID=4A
R

=4.7ΩVGS=10V

G

55
30

(Resistive Load see, Figure 3)

t

r(Voff)

t

f

t

c

Fall Time
Cross-over Time

Off-voltage Rise Time

= 480V, ID=8A,

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)

18
18
36

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD=10A,VGS=0
I

SD

VDD=40V,Tj= 150°C
(see test circuit, Figure 5)

= 8 A, di/dt = 100A/µs

570

4.3
15

when VDSincreases from 0 to 80%

oss

10
36

1.6 V

ns
ns

ns
ns
ns

A
A

ns

µC

A

3/14

STP10NK60Z-STP10NK60ZFP, STB10NK60Z, ST B10NK60Z -1, S TW10NK 60Z

Safe Opera ting Area For TO-220/D2PAK/I2PAK

Thermal Impedance For TO-220/D2PAK/ I2PAK

Thermal Im pedance For TO-220FPSafe Operating Area For TO-220FP

4/14

Thermal Im pedance For TO-247Safe Operating Area For TO-247

STP10NK60Z-STP10NK60ZFP, STB10N K60 Z, STB10N K60Z-1, ST W 10N K60Z

Output Characteristics

Transconductance Static Drain-source On Resistance

Transfer Characteri stic s

Capacitance VariationsGate Charge vs Gate-source Voltage

5/14

STP10NK60Z-STP10NK60ZFP, STB10NK60Z, ST B10NK60Z -1, S TW10NK 60Z

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.

Source-drain Diode Forward Characteristics

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Temperature

6/14

STP10NK60Z-STP10NK60ZFP, STB10N K60 Z, STB10N K60Z-1, ST W 10N K60Z

Fig. 2: Unclamped Induct ive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Lo ad

Fig. 5: Test Circuit F or Inductive Load Switching
And Diode Recovery Times

Fig. 4: Ga te Charge test Circuit

7/14

STP10NK60Z-STP10NK60ZFP, STB10NK60Z, ST B10NK60Z -1, S TW10NK 60Z

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/14

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

STP10NK60Z-STP10NK60ZFP, STB10N K60 Z, STB10N K60Z-1, ST W 10N K60Z

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/14

STP10NK60Z-STP10NK60ZFP, STB10NK60Z, ST B10NK60Z -1, S TW10NK 60Z

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126

R 0.4 0.015
V2 0º 8º

3

10/14

1

STP10NK60Z-STP10NK60ZFP, STB10N K60 Z, STB10N K60Z-1, ST W 10N K60Z

TO-262 (I2PAK) MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c 0.49 0.70 0.019 0.027

c2 1.23 1.32 0.048 0.052

D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

E 10 10.40 0.393 0.410

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

11/14

STP10NK60Z-STP10NK60ZFP, STB10NK60Z, ST B10NK60Z -1, S TW10NK 60Z

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102

b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134

c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e5.45 0.214
L 14.20 14.80 0.560 0.582

L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216

S5.50 0.216

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

12/14

STP10NK60Z-STP10NK60ZFP, STB10N K60 Z, STB10N K60Z-1, ST W 10N K60Z

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10 .7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1. 65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0. 153 0.161
P1 11.9 12 .1 0.468 0.476
P2 1.9 2.1 0. 075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

13/14

STP10NK60Z-STP10NK60ZFP, STB10NK60Z, ST B10NK60Z -1, S TW10NK 60Z

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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