ST STP10NK60Z, STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z User Manual

STB10NK60Z

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z

N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D2PAK/I2PAK/TO-247

Zener-Protected SuperMESH™Power MOSFET

TYPE	VDSS	RDS(on)	ID	Pw
STP10NK60Z	600 V	< 0.75 Ω	10 A	115 W
STP10NK60ZFP	600 V	< 0.75 Ω	10 A	35 W
STB10NK60Z	600 V	< 0.75 Ω	10 A	115 W
STB10NK60Z-1	600 V	< 0.75 Ω	10 A	115 W
STW10NK60Z	600 V	< 0.75 Ω	10 A	156 W

■TYPICAL RDS(on) = 0.65 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■100% AVALANCHE TESTED

■GATE CHARGE MINIMIZED

■VERY LOW INTRINSIC CAPACITANCES

■VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

■LIGHTING

ORDERING INFORMATION

	2
	1
TO-220	TO-220FP

1
D2PAK	1 2	3	3
D2PAK	1 2		2
			1

I2PAK	TO-247

INTERNAL SCHEMATIC DIAGRAM

SALES TYPE	MARKING	PACKAGE	PACKAGING

STP10NK60Z	P10NK60Z	TO-220	TUBE

STP10NK60ZFP	P10NK60ZFP	TO-220FP	TUBE

STB10NK60ZT4	B10NK60Z	D2PAK	TAPE & REEL
STB10NK60Z-1	B10NK60Z	I2PAK	TUBE
STW10NK60Z	W10NK60Z	TO-247	TUBE

July 2003

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STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

TO-220/

TO-220FP

TO-247

D2PAK/I2PAK

VDS

Drain-source Voltage (VGS = 0)

600

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

600

VGS

Gatesource Voltage

± 30

Drain Current (continuous) at TC = 25°C

10 (*)

Drain Current (continuous) at TC = 100°C

5.7

5.7 (*)

5.7

IDM ( )

Drain Current (pulsed)

36 (*)

PTOT

Total Dissipation at TC = 25°C

115

156

Derating Factor

0.92

0.28

1.25

W/°C

VESD(G-S)

Gate source ESD

4000

(HBM-C=100pF, R=1.5KΩ)

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)

2500

Operating Junction Temperature

-55 to 150

°C

Tstg

Storage Temperature

( ) Pulse width limited by safe operating area

(1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

TO-220

D2PAK

TO-220FP

TO-247

Unit

I2PAK

Rthj-case

Thermal Resistance Junction-case Max

1.09

3.6

0.8

°C/W

Rthj-pcb

Thermal Resistance Junction-pcb Max

°C/W

(When mounted on minimum Footprint)

Rthj-amb

Thermal Resistance Junction-ambient

62.5

°C/W

Max

Maximum Lead Temperature For

300

°C

Soldering Purpose

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

300

(starting Tj = 25 °C, I D = IAR, VDD = 50 V)

EAR

Repetitive Avalanche Energy

3.5

(Pulse with limited by Tj max.)

GATE-SOURCE ZENER DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVGSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain)

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid

the usage of external components.

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STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit

V(BR)DSS	Drain-source	ID = 1 mA, VGS = 0	600			V
	Breakdown Voltage

IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			50	µA
IGSS	Gate-body Leakage	VGS = ± 20V			±10	µA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 100µA	3	3.75	4.5	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 4.5 A		0.65	0.75	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit

gfs (1)	Forward Transconductance	VDS = 15 V, ID = 4.5 A		7.8		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		1370		pF
Coss	Output Capacitance			156		pF
Crss	Reverse Transfer			37		pF
	Capacitance

Coss eq. (3)	Equivalent Output	VGS = 0V, VDS = 0V to 480V		90		pF
	Capacitance

SWITCHING ON

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit

td(on)	Turn-on Delay Time	VDD = 300 V, ID = 4 A		20		ns
tr	Rise Time	RG = 4.7Ω VGS = 10 V		20		ns
		(Resistive Load see, Figure 3)

Qg	Total Gate Charge	VDD = 480V, ID = 8 A,		50	70	nC
Qgs	Gate-Source Charge	VGS = 10V		10		nC
Qgd	Gate-Drain Charge			25		nC
SWITCHING OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit

td(off)	Turn-off Delay Time	VDD = 300 V, ID = 4 A		55		ns
tf	Fall Time	RG = 4.7Ω VGS = 10 V		30		ns
		(Resistive Load see, Figure 3)

tr(Voff)	Off-voltage Rise Time	VDD = 480V, ID = 8 A,		18		ns
tf	Fall Time	RG = 4.7Ω, VGS = 10V		18		ns
tc	Cross-over Time	(Inductive Load see, Figure 5)		36		ns
SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit

ISD	Source-drain Current				10	A
ISDM (2)	Source-drain Current (pulsed)				36	A
VSD (1)	Forward On Voltage	ISD = 10 A, VGS = 0			1.6	V
trr	Reverse Recovery Time	ISD = 8 A, di/dt = 100A/µs		570		ns
Qrr	Reverse Recovery Charge	VDD = 40V, Tj = 150°C		4.3		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)		15		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

3.Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

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STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z

Safe Operating Area For TO-220/D2PAK/I2PAK

Thermal Impedance For TO-220/D2PAK/I2PAK

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220FP

Safe Operating Area For TO-247

Thermal Impedance For TO-247

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STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z

Output Characteristics

Transconductance

Gate Charge vs Gate-source Voltage

Transfer Characteristics

Static Drain-source On Resistance

Capacitance Variations

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