ST STP10NB50, STP10NB50FP User Manual

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STP10NB50



STP10NB50FP

N - CHANNEL 500V - 0.55Ω - 10.6A - TO-220/TO-220FP

PowerMESH MOSFET

TYPE V

STP10NB5 0 STP10NB5 0FP

■ TYPICALR ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100%AVALANCHETESTED ■ VERYLOW INTRINSICCAPACITANCES ■ GATECHARGE MINIMIZED

DS(on)

DSS

500 V 500 V

= 0.55

DESCRIPTION

Using the latesthigh voltage MESHOVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

R

DS(on)

<0.60Ω <0.60

Ω

I

D

10.6 A

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGHSPEEDSWITCHING ■ SWITCHMODE POWER SUPPLIES(SMPS) ■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P10 NB50 ST P1 0NB50F P

V

I

DM

P

dv/ dt(

V

T

(•) Pulse width limited by safe operating area (1)ISD≤ 10.6 A, di/dt≤ 200A/µs,VDD≤ V (*) Limited only by maximum temperatureallowed

October 1999

Drain-sour ce Voltage (VGS=0) 500 V

DS

Drain- gat e Voltage (RGS=20kΩ)

DGR

Gate-sourc e Voltage ± 30 V

GS

Drain Current ( continuous) at Tc=25oC 10.6 10.6( * ) A

I

D

Drain Current ( continuous) at Tc= 100oC6.46.4(*)A

I

D

500 V

(•) D r ain Current ( pul s ed ) 42.4 42.4 A

Total Dissipation at Tc=25oC 135 40 W

tot

Derating Fac t or 1.08 0.32 W/

1) Peak Diode Recovery voltag e slope 4.5 4.5 V/ns

Ins ulation With s t an d Voltag e (DC)  2000 V

ISO

Sto rage Te mpe r ature -65 to 150

stg

Max. Oper ating Junct ion Tem p er a t ure 150

T

j

(BR)DSS

,Tj≤T

JMAX

o

C

o

C

o

C

1/9

STP10NB50STP10NB50FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max Val ue U ni t

I

AR

E

Ther mal Resis t an ce Junc ti on-cas e Max 0.93 3.12 Ther mal Resis t an ce Junc ti on-ambien t Ma x

Thermal Resistance Case-sink Typ Maximum Lead Temper at ure For Sold er ing Purp os e

l

Avalanche Current, Repet it ive or No t -Repet it ive (pulse width limited by T

Single Pulse Avalanche Energ y

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

10.6 A

550 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

500 V

Break d own Vo lt age

I

DSS

I

GSS

Zero Gate Voltage Drain Cu rr ent (V

GS

Gat e- b ody Leakage Current (V

DS

=0)

V

=MaxRating

DS

= Max Rating Tc=125oC

V

DS

=± 30 V

V

GS

1

50

± 100 nA

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250µA

345V

Voltage

R

DS(on)

Static Drain-source On

VGS=10V ID= 5.3 A 0.55 0.60 Ω

Resistanc e

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

10.6 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconduc tance

C

Input Capac i t ance

iss

Out put Capac it a nc e

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=5.3 A 5 8 S

VDS=25V f=1MHz VGS= 0 1480

210

25

µ µA

pF pF pF

A

2/9

STP10NB50 STP10NB50FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Time

r

Rise Time

t

VDD= 250 V ID=5.3A R

=4.7

G

Ω

VGS=10V

25 13

14 20

(see te st circuit, f igure 3)

Q Q Q

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD= 160 V ID=10A VGS=10V 38

10 17

49 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time Fall Time

f

Cross-ov er Ti me

c

VDD= 160 V ID=10A

=4.7 ΩVGS=10V

R

G

(see te st circuit, f igure 5)

13 15 25

11 14 28

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, dutycycle 1.5% (•) Pulse width limited by safeoperating area

Source-drain Current

(•)

Source-drain Current

10.6

42.4

(pulsed)

(∗) F or ward On Voltage ISD=10.6 A VGS=0 1.6 V

Reverse Recovery

rr

Time Reverse Recovery

rr

=10.6 A di/dt = 100 A/µs

I

SD

=50V Tj= 150oC

V

DD

(see te st circuit, f igure 5)

560

4.9 Charge Reverse Recovery

17.5

Current

ns ns

nC nC

ns ns ns

A A

ns nC

A

SafeOperating Area SafeOperating Area for TO-220FP

3/9