ST STP10NB20, STP10NB20FP User Manual

STP10NB20

STP10NB20

STP10NB20FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH MOSFET

TYPE	VDSS	RDS(on)	ID
STP10NB20	200 V	< 0.40 Ω	10 A
STP10NB20FP	200 V	< 0.40 Ω	6 A

■TYPICAL RDS(on) = 0.3 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■100% AVALANCHE TESTED

■VERY LOW INTRINSIC CAPACITANCES

■GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SWITCH MODE POWER SUPPLIES (SMPS)

■DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

3	3
2	2
1	1
TO-220	TO-220FP

INTERNAL SCHEMATIC DIAGRAM

Symbol	Parameter	Value		Uni t
		ST P10NB20	STP10NB20FP
VDS	Drain-source Voltage (VGS = 0)		200	V
VDGR	Draingate Voltage (RGS = 20 kΩ)		200	V
VGS	Gate-source Voltage		± 30	V
ID	Drain Current (continuous) at Tc = 25 oC	10	6	A
ID	Drain Current (continuous) at Tc = 100 oC	6	4	A
IDM(•)	Drain Current (pulsed)	40	40	A
Pt ot	Total Dissipation at Tc = 25 oC	85	30	W
	Derating Factor	0.68	0.24	W/oC
dv/dt(1)	Peak Diode Recovery voltage slope	5.5	5.5	V/ns
VISO	Insulation Withstand Voltage (DC)	2000		V
Tstg	Storage Temperature	-65 to 150		oC
Tj	Max. Operating Junction Temperature		150	oC
(•) Pulse width limited by safe operating area		(1) ISD ≤ 10A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

November 1997

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STP10NB20/FP

THERMAL DATA

					TO-220	T O220FP
Rt hj-ca se	Thermal Resistance Junction-case			Max	1.47	4.17	oC/W
Rt hjamb	Thermal	Resistance	Junction-ambient	Max	62.5		oC/W
Rthcsi nk	Thermal	Resistance	Case-sink	Typ	0.5		oC/W
Tl	Maximum Lead Temperature For Soldering Purpose				300		oC

AVALANCHE CHARACTERISTICS

Symb ol	Parameter	Max Valu e	Uni t
IAR	Avalanche Current, Repetitive or Not-Repetitive	10	A
	(pulse width limited by Tj max, δ < 1%)
EAS	Single Pulse Avalanche Energy	150	mJ
	(starting Tj = 25 oC, ID = IAR , VDD = 50 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symb ol	Parameter	Test Cond ition s		Mi n.	Typ . Max.	Un it
V(BR)DSS	Drain-source	ID = 250 μA VGS = 0		200		V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating	Tc = 125 oC		1	μA
	Drain Current (VGS = 0)	VDS = Max Rating			10	μA
IGSS	Gate-body Leakage	VGS = ± 30 V			± 100	nA
	Current (VDS = 0)

ON ( )

Symb ol	Parameter	Test Cond ition s		Mi n.	Typ .	Max.	Un it
VGS(th)	Gate Threshold	VDS = VGS	ID = 250 μA	3	4	5	V
	Voltage
RDS( on)	Static Drain-source On	VGS = 10V	ID = 5 A		0.30	0.40	Ω
	Resistance
ID(o n)	On State Drain Current	VDS > ID(on) x RDS(on) max		10			A
		VGS = 10 V

DYNAMIC

Symb ol	Parameter	Test Cond ition s		Mi n.	Typ .	Max.	Un it
gfs ( ) Forward		VDS > ID(on) x RDS(on) max	ID =5 A	3	4		S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V f = 1 MHz	VGS = 0		470	650	pF
Coss	Output Capacitance				135	190	pF
Crss	Reverse Transfer				22	30	pF
	Capacitance

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STP10NB20/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol	Parameter	Test Cond ition s		Mi n. Typ . Max. Un it
td(on)	Turn-on Time	VDD = 100 V	ID = 5 A	10	14	ns
tr	Rise Time	RG = 4.7 Ω	VGS = 10 V	15	20	ns
		(see test circuit, figure 3)
Qg	Total Gate Charge	VDD = 160 V	ID = 10 A VGS = 10 V	17	24	nC
Qgs	Gate-Source Charge			7.5		nC
Qgd	Gate-Drain Charge			5.5		nC

SWITCHING OFF

Symb ol	Parameter
tr(Vof f)	Off-voltage Rise Time
tf	Fall Time
tc	Cross-over Time

Test Cond ition s		Mi n. Typ .	Max.	Un it
VDD = 160 V	ID = 10 A	8	11	ns
RG = 4.7 Ω	VGS = 10 V	10	14	ns
(see test circuit, figure 5)		20	28	ns

SOURCE DRAIN DIODE

Symb ol	Parameter	Test Cond ition s	Mi n. Typ . Max.	Un it
ISD	Source-drain Current		10	A
ISDM (•)	Source-drain Current		40	A

(pulsed)

VSD ( ) Forward On Voltage

trr Reverse Recovery

Time

Qrr Reverse Recovery

Charge

IRRM Reverse Recovery

Current

ISD =10 A	VGS = 0		1.5	V
ISD =10 A	di/dt = 100 A/μs	170		ns
VDD = 50 V	Tj = 150 oC
(see test circuit, figure 5)		980		nC
		11.5		A

( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

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