Value Line, 8-bit ultralow power MCU, 64-KB Flash,
256-byte data EEPROM, RTC, LCD, timers, USART, I2C, SPI, ADC
Datasheet − production data
Features
■ Operating conditions
– Operating power supply: 1.8 V to 3.6 V
– Temperature range: -40 °C to 85 °C
■ Low power features
– 5 low power modes: Wait, Low power run
(5.9 µA), Low power wait (3 µA), Active-halt
with full RTC (1.4 µA), Halt (400 nA)
– Dynamic power consumption:
200 µA/MHz + 330 µA
– Ultra-low leakage per I/0: 50 nA
– Fast wakeup from Halt: 4.7 µs
■ Advanced STM8 core
– Harvard architecture and 3-stage pipeline
– Max freq. 16 MHz, 16 CISC MIPS peak
– Up to 40 external interrupt sources
■ Reset and supply management
– Low power, ultra-safe BOR reset with 5
programmable thresholds
– Ultra low power POR/PDR
– Programmable voltage detector (PVD)
■ Clock management
– 32 kHz and 1 to 16 MHz crystal oscillators
– Internal 16 MHz factory-trimmed RC
– 38 kHz low consumption RC
– Clock security system
■ Low power RTC
– BCD calendar with alarm interrupt
– Digital calibration with +/- 0.5ppm accuracy
– Advanced anti-tamper detection
■ LCD: 8x24 or 4x28 w/ step-up converter
■ Memories
– 64 KB Flash program memory and
256 bytes data EEPROM with ECC, RWW
– Flexible write and read protection modes
– 4 KB of RAM
■ DMA
– 4 channels supporting ADC, SPIs, I2C,
USARTs, timers
– 1 channel for memory-to-memory
■ 12-bit ADC up to 1 Msps/28 channels
– Internal reference voltage
■ Timers
– Three 16-bit timers with 2 channels (used
as IC, OC, PWM), quadrature encoder
– One 16-bit advanced control timer with 3
channels, supporting motor control
– One 8-bit timer with 7-bit prescaler
– 2 watchdogs: 1 Window, 1 Independent
– Beeper timer with 1, 2 or 4 kHz frequencies
■ Communication interfaces
– Two synchronous serial interfaces (SPI)
–Fast I
2
C 400 kHz SMBus and PMBus
– Three USARTs (ISO 7816 interface + IrDA)
■ Up to 54 I/Os, all mappable on interrupt vectors
■ Development support
– Fast on-chip programming and non-
intrusive debugging with SWIM
– Bootloader using USART
June 2012Doc ID 023337 Rev 11/109
This is information on a product in full production.
This document describes the features, pinout, mechanical data and ordering information of
the high density value line STM8L052R8 microcontroller with a Flash memory density of
64 Kbytes.
For further details on the whole STMicroelectronics high density family please refer to
Section 2.2: Ultra low power continuum.
For detailed information on device operation and registers, refer to the reference manual
(RM0031).
For information on to the Flash program memory and data EEPROM, refer to the
programming manual (PM0054).
For information on the debug module and SWIM (single wire interface module), refer to the
STM8 SWIM communication protocol and debug module user manual (UM0470).
For information on the STM8 core, refer to the STM8 CPU programming manual (PM0044).
High density value line devices provide the following benefits:
●Integrated system
–64 Kbytes of high density embedded Flash program memory
–256 bytes of data EEPROM
–4 Kbytes of RAM
–Internal high speed and low-power low speed RC
–Embedded reset
●Ultra low power consumption
–1 µA in Active-halt mode
–Clock gated system and optimized power management
–Capability to execute from RAM for Low power wait mode and low power run mode
●Advanced features
–Up to 16 MIPS at 16 MHz CPU clock frequency
–Direct memory access (DMA) for memory-to-memory or peripheral-to-memory
access
●Short development cycles
–Application scalability across a common family product architecture with
compatible pinout, memory map and modular peripherals
–Wide choice of development tools
These features make the value line STM8L05xxx ultra low power microcontroller family
suitable for a wide range of consumer and mass market applications.
Refer to Table 1: High density value line STM8L05xxx low power device features and
peripheral counts and Section 3: Functional overview for an overview of the complete range
of peripherals proposed in this family.
Figure 1 shows the block diagram of the high density value line STM8L05xxx family.
8/109Doc ID 023337 Rev 1
STM8L052R8Description
2 Description
The high density value line STM8L05xxx devices are members of the STM8L ultra low
power 8-bit family.
The value line STM8L05xxx ultra low power family features the enhanced STM8 CPU core
providing increased processing power (up to 16 MIPS at 16 MHz) while maintaining the
advantages of a CISC architecture with improved code density, a 24-bit linear addressing
space and an optimized architecture for low power operations.
The family includes an integrated debug module with a hardware interface (SWIM) which
allows non-intrusive In-application debugging and ultra-fast Flash programming.
High density value line STM8L05xxx microcontrollers feature embedded data EEPROM and
low-power, low-voltage, single-supply program Flash memory.
All devices offer 12-bit ADC, real-time clock, four 16-bit timers, one 8-bit timer as well as
standard communication interface such as two SPIs, I2C, three USARTs and 8x24 or 4x28segment LCD. The 8x24 or
STM8L05xxx.
4x 28-segment LCD is available on the high density value line
The STM8L05xxx family operates from 1.8 V to 3.6 V and is available in the
temperature range.
The modular design of the peripheral set allows the same peripherals to be found in different
ST microcontroller families including 32-bit families. This makes any transition to a different
family very easy, and simplified even more by the use of a common set of development
tools.
All value line STM8L ultra low power products are based on the same architecture with the
same memory mapping and a coherent pinout.
-40 to +85 °C
Doc ID 023337 Rev 19/109
DescriptionSTM8L052R8
2.1 Device overview
Table 1.High density value line STM8L05xxx low power device features and
peripheral counts
FeaturesSTM8L052R8
Flash (Kbytes)64
Data EEPROM (bytes)256
RAM (Kbytes)4
LCD8x24 or 4x28
Basic
1
(8-bit)
Timers
General purpose
Advanced control
3
(16-bit)
1
(16-bit)
SPI2
Communication
interfaces
I2C1
USART3
GPIOs54
12-bit synchronized ADC
(number of channels)
(1)
1
(28)
RTC, window watchdog, independent watchdog,
Others
16-MHz and 38-kHz internal RC,
1- to 16-MHz and 32-kHz external oscillator
CPU frequency16 MHz
Operating voltage1.8 V to 3.6 V
Operating temperature-40 to +85 °C
PackageLQFP64
1. The number of GPIOs given in this table includes the NRST/PA1 pin but the application can use the
NRST/PA1 pin as general purpose output only (PA1).
10/109Doc ID 023337 Rev 1
STM8L052R8Description
2.2 Ultra low power continuum
The ultra low power value line STM8L05xxx and STM8L15xxx are fully pin-to-pin, software
and feature compatible. Besides the full compatibility within the STM8L family, the devices
are part of STMicroelectronics microcontrollers ultra low power strategy which also includes
STM8L101xx and STM32L15xxx. The STM8L and STM32L families allow a continuum of
performance, peripherals, system architecture, and features.
They are all based on STMicroelectronics 0.13 µm ultra-low leakage process.
Note:1The STM8L05xxx is pin-to-pin compatible with STM8L101xx devices.
2The STM32L family is pin-to-pin compatible with the general purpose STM32F family.
Please refer to STM32L15x documentation for more information on these devices.
Performance
All families incorporate highly energy-efficient cores with both Harvard architecture and
pipelined execution: advanced STM8 core for STM8L families and ARM Cortex™-M3 core
for STM32L family. In addition specific care for the design architecture has been taken to
optimize the mA/DMIPS and mA/MHz ratios.
This allows the ultra low power performance to range from 5 up to 33.3 DMIPs.
Shared peripherals
STM8L05x, STM8L15x and STM32L15xx share identical peripherals which ensure a very
easy migration from one family to another:
●Analog peripheral: ADC1
●Digital peripherals: RTC and some communication interfaces
Common system strategy
To offer flexibility and optimize performance, the STM8L and STM32L devices use a
common architecture:
●Same power supply range from 1.8 to 3.6 V
●Architecture optimized to reach ultra-low consumption both in low power modes and
Run mode
●Fast startup strategy from low power modes
●Flexible system clock
●Ultra-safe reset: same reset strategy for both STM8L and STM32L including power-on
reset, power-down reset, brownout reset and programmable voltage detector
Features
ST ultra low power continuum also lies in feature compatibility:
●More than 10 packages with pin count from 20 to 100 pins and size down to 3 x 3 mm
●Memory density ranging from 4 to 128 Kbytes
Doc ID 023337 Rev 111/109
Functional overviewSTM8L052R8
MS30323V1
Clock
controller
and CSS
Clocks
Address, control and data buses
64-Kbyte
4-Kbyte RAM
to core and
peripherals
IWDG
(38 kHz clock)
Port A
Port B
Port C
Power
VOLT. REG.
LCD driver
WWDG
256 bytes
Port D
Port E
Beeper
RTC
Program memory
Data EEPROM
@V
DD
V
DD18
V
DD
=1.8 V
V
SS
SWIM
SCL, SDA,
SPI1_MOSI, SPI1_MISO,
SPI1_SCK, SPI1_NSS
USART1_RX, USART1_TX,
USART1_CK
ADC1_INx
V
DDA, VSSA
SMB
@V
DDA/VSSA
12-bit ADC1
V
REF+
3.6 V
NRST
PA[7:0]
PB[7:0]
PC[7:0]
PD[7:0]
PE[7:0]
PF[7:0]
BEEP
ALARM, CALIB,
TAMP1/2/3
SEGx, COMx
POR/PDR
OSC_IN,
OSC_OUT
OSC32_IN,
OSC32_OUT
to
BOR
PVD
PVD_IN
RESET
DMA1 (4 channels)
3 channels
2 channels
2 channels
V
LCD
= 2.5 to 3.6 V
LCD booster
Internal reference
voltage
VREFINT out
IR_TIM
1-16 MHz oscillator
16 MHz internal RC
32 kHz oscillator
STM8 Core
16-bit Timer 1
16-bit Timer 2
38 kHz internal RC
Interrupt controller
16-bit Timer 3
Debug module
(SWIM)
8-bit Timer 4
Infrared interface
SPI1
I²C1
USART1
V
REF-
Port F
16-bit Timer 5
2 channels
SPI2
SPI2_MOSI, SPI2_MISO,
SPI2_SCK, SPI2_NSS
USART2_RX, USART2_TX,
USART2_CK
USART2
USART3_RX, USART3_TX,
USART3_CK
USART3
PG[7:0]
Port G
YPSY
up to
up to
3 Functional overview
Figure 1.High density value line STM8L05xxx device block diagram
1. Legend:
ADC: Analog-to-digital converter
BOR: Brownout reset
DMA: Direct memory access
I²C: Inter-integrated circuit multimaster interface
LCD: Liquid crystal display
POR/PDR: Power on reset / power down reset
RTC: Real-time clock
SPI: Serial peripheral interface
SWIM: Single wire interface module
USART: Universal synchronous asynchronous receiver transmitter
WWDG: Window watchdog
IWDG: independent watchdog
12/109Doc ID 023337 Rev 1
STM8L052R8Functional overview
3.1 Low power modes
The high density value line STM8L05xxx devices support five low power modes to achieve
the best compromise between low power consumption, short startup time and available
wakeup sources:
●Wait mode: The CPU clock is stopped, but selected peripherals keep running. An
internal or external interrupt, event or a Reset can be used to exit the microcontroller
from Wait mode (WFE or WFI mode).
●Low power run mode: The CPU and the selected peripherals are running. Execution
is done from RAM with a low speed oscillator (LSI or LSE). Flash memory and data
EEPROM are stopped and the voltage regulator is configured in ultra low power mode.
The microcontroller enters Low power run mode by software and can exit from this
mode by software or by a reset.
All interrupts must be masked. They cannot be used to exit the microcontroller from this
mode.
●Low power wait mode: This mode is entered when executing a Wait for event in Low
power run mode. It is similar to Low power run mode except that the CPU clock is
stopped. The wakeup from this mode is triggered by a Reset or by an internal or
external event (peripheral event generated by the timers, serial interfaces, DMA
controller (DMA1) and I/O ports). When the wakeup is triggered by an event, the
system goes back to Low power run mode.
All interrupts must be masked. They cannot be used to exit the microcontroller from this
mode.
●Active-halt mode: CPU and peripheral clocks are stopped, except RTC. The wakeup
can be triggered by RTC interrupts, external interrupts or reset.
●Halt mode: CPU and peripheral clocks are stopped, the device remains powered on.
The wakeup is triggered by an external interrupt or reset. A few peripherals have also a
wakeup from Halt capability. Switching off the internal reference voltage reduces power
consumption. Through software configuration it is also possible to wake up the device
without waiting for the internal reference voltage wakeup time to have a fast wakeup
time of 5 µs.
Doc ID 023337 Rev 113/109
Functional overviewSTM8L052R8
3.2 Central processing unit STM8
3.2.1 Advanced STM8 Core
The 8-bit STM8 core is designed for code efficiency and performance with an Harvard
architecture and a 3-stage pipeline.
It contains 6 internal registers which are directly addressable in each execution context, 20
addressing modes including indexed indirect and relative addressing, and 80 instructions.
Architecture and registers
●Harvard architecture
●3-stage pipeline
●32-bit wide program memory bus - single cycle fetching most instructions
●X and Y 16-bit index registers - enabling indexed addressing modes with or without
offset and read-modify-write type data manipulations
●8-bit accumulator
●24-bit program counter - 16-Mbyte linear memory space
●16-bit stack pointer - access to a 64-Kbyte level stack
●8-bit condition code register - 7 condition flags for the result of the last instruction
Addressing
●20 addressing modes
●Indexed indirect addressing mode for lookup tables located anywhere in the address
space
●Stack pointer relative addressing mode for local variables and parameter passing
Instruction set
●80 instructions with 2-byte average instruction size
●Standard data movement and logic/arithmetic functions
●8-bit by 8-bit multiplication
●16-bit by 8-bit and 16-bit by 16-bit division
●Bit manipulation
●Data transfer between stack and accumulator (push/pop) with direct stack access
●Data transfer using the X and Y registers or direct memory-to-memory transfers
3.2.2 Interrupt controller
The high density value line STM8L05xxx devices feature a nested vectored interrupt
controller:
●Nested interrupts with 3 software priority levels
●32 interrupt vectors with hardware priority
●Up to 40 external interrupt sources on 11 vectors
●Trap and reset interrupts
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STM8L052R8Functional overview
3.3 Reset and supply management
3.3.1 Power supply scheme
The device requires a 1.8 V to 3.6 V operating supply voltage (VDD). The external power
supply pins must be connected as follows:
●V
●V
●V
3.3.2 Power supply supervisor
The device has an integrated ZEROPOWER power-on reset (POR)/power-down reset
(PDR), coupled with a brownout reset (BOR) circuitry that ensures proper operation starting
from 1.8 V. After the 1.8 V BOR threshold is reached, the option byte loading process starts,
either to confirm or modify default thresholds, or to disable BOR permanently.
, V
, V
, V
, V
, V
SS1
DD1
SS2
DD2
SS3
= 1.8 to 3.6 V: external power supply for I/Os and
DD3
for the internal regulator. Provided externally through V
ground pin is VSS. V
SS1/VSS2/VSS3/VSS4
and V
DD1/VDD2/VDD3
unconnected.
SSA ; VDDA
V
must be connected to VDD and VSS, respectively.
SSA
REF+
externally through V
= 1.8 to 3.6 V: external power supplies for analog peripherals. V
; V
(for ADC1): external reference voltage for ADC1. Must be provided
REF-
REF+
and V
REF-
pin.
pins, the corresponding
DD
must not be left
DDA
and
Five BOR thresholds are available through option bytes, starting from 1.8 V to 3 V. To
reduce the power consumption in Halt mode, it is possible to automatically switch off the
internal reference voltage (and consequently the BOR) in Halt mode. The device remains
under reset when V
DD
for any external reset circuit.
The device features an embedded programmable voltage detector (PVD) that monitors the
V
DD/VDDA
power supply and compares it to the V
levels between 1.85 V and 3.05 V, chosen by software, with a step around 200 mV. An
interrupt can be generated when V
V
DD/VDDA
is higher than the V
a warning message and/or put the MCU into a safe state. The PVD is enabled by software.
3.3.3 Voltage regulator
The high density value line STM8L05xxx embeds an internal voltage regulator for
generating the 1.8 V power supply for the core and peripherals.
This regulator has two different modes:
●Main voltage regulator mode (MVR) for Run, Wait for interrupt (WFI) and Wait for event
(WFE) modes
●Low power voltage regulator mode (LPVR) for Halt, Active-halt, Low power run and Low
power wait modes
When entering Halt or Active-halt modes, the system automatically switches from the MVR
to the LPVR in order to reduce current consumption.
is below a specified threshold, V
threshold. This PVD offers 7 different
PVD
DD/VDDA
threshold. The interrupt service routine can then generate
PVD
drops below the V
POR/PDR
PVD
or V
, without the need
BOR
threshold and/or when
Doc ID 023337 Rev 115/109
Functional overviewSTM8L052R8
3.4 Clock management
The clock controller distributes the system clock (SYSCLK) coming from different oscillators
to the core and the peripherals. It also manages clock gating for low power modes and
ensures clock robustness.
Features
●Clock prescaler: To get the best compromise between speed and current
consumption the clock frequency to the CPU and peripherals can be adjusted by a
programmable prescaler.
●Safe clock switching: Clock sources can be changed safely on the fly in run mode
through a configuration register.
●Clock management: To reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
●System clock sources: 4 different clock sources can be used to drive the system
clock:
–1-16 MHz High speed external crystal (HSE)
–16 MHz High speed internal RC oscillator (HSI)
–32.768 kHz Low speed external crystal (LSE)
–38 kHz Low speed internal RC (LSI)
●RTC and LCD clock sources: The above four sources can be chosen to clock the
RTC and the LCD, whatever the system clock.
●Startup clock: After reset, the microcontroller restarts by default with an internal
2 MHz clock (HSI/8). The prescaler ratio and clock source can be changed by the
application program as soon as the code execution starts.
●Clock security system (CSS): This feature can be enabled by software. If a HSE clock
failure occurs, the system clock is automatically switched to HSI.
●Configurable main clock output (CCO): This outputs an external clock for use by the
application.
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STM8L052R8Functional overview
HSE OSC
1-16 MHz
HSI RC
16 MHz
LSI RC
38 kH z
LSE OSC
32 768 k
H
z
HSI
LSI
RTC
prescaler
/1;2;4;8;16;32;64
PCLK
to peripherals
RTCCLK/2
to LCD
to IWDG
SYSCLK
HSE
LSI
LSE
OSC_OUT
OSC32_OUT
OSC_IN
OSC32_IN
clock output
CCO
prescaler
/1;2;4;8;16;32;64
HSI
LSI
HSE
LSE
CCO
to core and
memory
SYSCLK
Presc aler
/1;2;4;8;16;32;64;128
IWDGCLK
RTCSEL[3:0]
LSE
CLKBEEPSEL[1:0]
to BEEP
BEEPCLK
MS30324V1
CSS
configurable
.
/ 2
Peripheral
Clock enable (20 bits)
to RTC
RTCCLK
clock enable (1 bit)
LCDCLK
to LCD
SYSCLK
Halt
clock enable (1 bit)
LCD peripheral
RTCCLK
LCD peripheral
CSS_LSE
Figure 2.High density value line STM8L05xxx clock tree diagram
1. The HSE clock source can be either an external crystal/ceramic resonator or an external source (HSE
bypass). Refer to Section HSE clock in the STM8L15x and STM8L16x reference manual (RM0031).
2. The LSE clock source can be either an external crystal/ceramic resonator or a external source (LSE
bypass). Refer to Section LSE clock in the STM8L15x and STM8L16x reference manual (RM0031).
3.5 Low power real-time clock
The real-time clock (RTC) is an independent binary coded decimal (BCD) timer/counter.
Six byte locations contain the second, minute, hour (12/24 hour), week day, date, month,
year, in BCD (binary coded decimal) format. Correction for 28, 29 (leap year), 30, and 31
day months are made automatically.The subsecond field can also be read in binary format.
The calendar can be corrected from 1 to 32767 RTC clock pulses. This allows to make a
synchronization to a master clock.
The RTC offers a digital calibration which allows an accuracy of +/-0.5ppm.
It provides a programmable alarm and programmable periodic interrupts with wakeup from
Halt capability.
●Periodic wakeup time using the 32.768 kHz LSE with the lowest resolution (of 61 µs) is
from min. 122 µs to max. 3.9 s. With a different resolution, the wakeup time can reach
36 hours.
●Periodic alarms based on the calendar can also be generated from every second to
A clock security system detects a failure on LSE, and can provide an interrupt with wakeup
capability. The RTC clock can automatically switch to LSI in case of LSE failure.
The RTC also provides 3 anti-tamper detection pins. This detection embeds aprogrammable
filter and can wakeup the MCU.
every year.
Doc ID 023337 Rev 117/109
Functional overviewSTM8L052R8
3.6 LCD (Liquid crystal display)
The LCD is only available on STM8L052xx devices.
The liquid crystal display drives up to 8 common terminals and up to 24 segment terminals
to drive up to 192 pixels. It can also be configured to drive up to 4 common and 28 segments
(up to 112 pixels).
●Internal step-up converter to guarantee contrast control whatever V
●Static 1/2, 1/3, 1/4, 1/8 duty supported.
●Static 1/2, 1/3, 1/4 bias supported.
●Phase inversion to reduce power consumption and EMI.
●Up to 8 pixels which can be programmed to blink.
●The LCD controller can operate in Halt mode.
DD
.
Note:Unnecessary segments and common pins can be used as general I/O pins.
3.7 Memories
The high density value line STM8L05xxx devices have the following main features:
●4 Kbytes of RAM
●The non-volatile memory is divided into three arrays:
–64 Kbytes of high density embedded Flash program memory
–256 bytes of data EEPROM
–Option bytes
The EEPROM embeds the error correction code (ECC) feature. It supports the read-whilewrite (RWW): it is possible to execute the code from the program matrix while
programming/erasing the data matrix.
The option byte protects part of the Flash program memory from write and readout piracy.
3.8 DMA
A 4-channel direct memory access controller (DMA1) offers a memory-to-memory and
peripherals-from/to-memory transfer capability. The 4 channels are shared between the
following IPs with DMA capability: ADC1, I2C1, SPI1, SPI 2, USART1, USART2, USART3
and the five timers.
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STM8L052R8Functional overview
3.9 Analog-to-digital converter
●12-bit analog-to-digital converter (ADC1) with 28 channels (including 4 fast channels),
temperature sensor and internal reference voltage
●Conversion time down to 1 µs with f
●Programmable resolution
●Programmable sampling time
●Single and continuous mode of conversion
●Scan capability: automatic conversion performed on a selected group of analog inputs
●Analog watchdog: interrupt generation when the converted voltage is outside the
SYSCLK
= 16 MHz
programmed threshold
●Triggered by timer
Note:ADC1 can be served by DMA1.
3.10 System configuration controller and routing interface
The system configuration controller provides the capability to remap some alternate
functions on different I/O ports. TIM4 and ADC1 DMA channels can also be remapped.
The highly flexible routing interface allows application software to control the routing of
different I/Os to the TIM1 timer input captures. It also controls the routing of internal analog
signals to ADC1 and the internal reference voltage V
3.11 Timers
The high density value line STM8L05xxx devices contain one advanced control timer
(TIM1), three 16-bit general purpose timers (TIM2, TIM3 and TIM5) and one 8-bit basic
timer (TIM4).
All the timers can be served by DMA1.
Ta bl e 2 compares the features of the advanced control, general-purpose and basic timers.
Table 2.Timer feature comparison
Timer
TIM1
TIM2
TIM3
TIM5
TIM48-bitup
Counter
resolution
16-bitup/down
Counter
type
Prescaler factor
Any integer
from 1 to 65536
Any power of 2
from 1 to 128
Any power of 2
from 1 to 32768
DMA1
request
generation
Ye s
.
REFINT
Capture/compare
channels
3 + 13
2
0
Complementary
outputs
None
Doc ID 023337 Rev 119/109
Functional overviewSTM8L052R8
3.11.1 TIM1 - 16-bit advanced control timer
This is a high-end timer designed for a wide range of control applications. With its
complementary outputs, dead-time control and center-aligned PWM capability, the field of
applications is extended to motor control, lighting and half-bridge driver.
●16-bit up, down and up/down autoreload counter with 16-bit prescaler
●3 independent capture/compare channels (CAPCOM) configurable as input capture,
output compare, PWM generation (edge and center aligned mode) and single pulse
mode output
●1 additional capture/compare channel which is not connected to an external I/O
●Synchronization module to control the timer with external signals
●Break input to force timer outputs into a defined state
●3 complementary outputs with adjustable dead time
●Encoder mode
●Interrupt capability on various events (capture, compare, overflow, break, trigger)
3.11.2 16-bit general purpose timers
●16-bit autoreload (AR) up/down-counter
●7-bit prescaler adjustable to fixed power of 2 ratios (1…128)
●Interrupt capability on various events (capture, compare, overflow, break, trigger)
●Synchronization with other timers or external signals (external clock, reset, trigger and
enable)
3.11.3 8-bit basic timer
The 8-bit timer consists of an 8-bit up auto-reload counter driven by a programmable
prescaler. It can be used for timebase generation with interrupt generation on timer overflow.
3.12 Watchdog timers
The watchdog system is based on two independent timers providing maximum security to
the applications.
3.12.1 Window watchdog timer
The window watchdog (WWDG) is used to detect the occurrence of a software fault, usually
generated by external interferences or by unexpected logical conditions, which cause the
application program to abandon its normal sequence.
3.12.2 Independent watchdog timer
The independent watchdog peripheral (IWDG) can be used to resolve processor
malfunctions due to hardware or software failures.
It is clocked by the internal LSI RC clock source, and thus stays active even in case of a
CPU clock failure.
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STM8L052R8Functional overview
3.13 Beeper
The beeper function outputs a signal on the BEEP pin for sound generation. The signal is in
the range of 1, 2 or 4 kHz.
3.14 Communication interfaces
3.14.1 SPI
The serial peripheral interfaces (SPI1 and SPI2) provide half/ full duplex synchronous serial
communication with external devices.
●Maximum speed: 8 Mbit/s (f
●Full duplex synchronous transfers
●Simplex synchronous transfers on 2 lines with a possible bidirectional data line
●Master or slave operation - selectable by hardware or software
●Hardware CRC calculation
●Slave/master selection input pin
SYSCLK
Note:SPI1 and SPI2 can be served by the DMA1 Controller.
/2) both for master and slave
3.14.2 I²C
The I2C bus interface (I2C1) provides multi-master capability, and controls all I²C busspecific sequencing, protocol, arbitration and timing.
●Master, slave and multi-master capability
●Standard mode up to 100 kHz and fast speed modes up to 400 kHz
●7-bit and 10-bit addressing modes
●SMBus 2.0 and PMBus support
●Hardware CRC calculation
Note:I
2
C1 can be served by the DMA1 Controller.
3.14.3 USART
The USART interfaces (USART1, USART2 and USART3) allow full duplex, asynchronous
communications with external devices requiring an industry standard NRZ asynchronous
serial data format. It offers a very wide range of baud rates.
●1 Mbit/s full duplex SCI
●SPI1 emulation
●High precision baud rate generator
●Smartcard emulation
●IrDA SIR encoder decoder
●Single wire half duplex mode
Note:USART1, USART2 and USART3 can be served by the DMA1 Controller.
Doc ID 023337 Rev 121/109
Functional overviewSTM8L052R8
3.15 Infrared (IR) interface
The high density value line STM8L05xxx devices contain an infrared interface which can be
used with an IR LED for remote control functions. Two timer output compare channels are
used to generate the infrared remote control signals.
3.16 Development support
Development tools
Development tools for the STM8 microcontrollers include:
●The STice emulation system offering tracing and code profiling
●The STVD high-level language debugger including C compiler, assembler and
integrated development environment
●The STVP Flash programming software
The STM8 also comes with starter kits, evaluation boards and low-cost in-circuit
debugging/programming tools.
Single wire data interface (SWIM) and debug module
The debug module with its single wire data interface (SWIM) permits non-intrusive real-time
in-circuit debugging and fast memory programming.
The Single wire interface is used for direct access to the debugging module and memory
programming. The interface can be activated in all device operation modes.
The non-intrusive debugging module features a performance close to a full-featured
emulator. Beside memory and peripherals, CPU operation can also be monitored in realtime by means of shadow registers.
Bootloader
A bootloader is available to reprogram the Flash memory using the USART1, USART2,
USART3 (USARTs in asynchronous mode), SPI1 or SPI2 interfaces. The reference
document for the bootloader is UM0560: STM8 bootloader user manual.
The bootloader is used to download application software into the device memories,
including RAM, program and data memory, using standard serial interfaces. It is a
complementary solution to programming via the SWIM debugging interface.
22/109Doc ID 023337 Rev 1
STM8L052R8Pin description
12
21
1
2
3
4
5
6
7
8
9
10
11
NRST/PA1
PA2
PA3
PA4
VLCD
PE0
PE1
PD1
PD2
PD3
PE3
PD0
PE5
PE4
V
DD1
V
DDA
V
REF+
PE2
PB2
PC0
PC1
V
DD3
V
SS3
PC2
PC3
PC4
PC5
PC6
PC7
PE6
PE7
PB3
PB4
PB5
PB6
PB7
PF0
PD4
PD5
PD6
PD7
PA0
PA5
14
15
16
17
18
19
20
13
PA6
PA7
V
SSA/VREF-
V
SS1
PG1
PG0
PG2
PG3
PB1
PB0
PF1
PF4
PF5
PF6
PF7
PG4
PG5
PG6
PG7
V
SS2
V
DD2
50515253545557585960616263645649
32 31 30 28 27 26 25 24 23 22 29
41
48
47
46
45
44
43
42
39
38
37
36
35
34
33
40
ai17835
4 Pin description
Figure 3.STM8L052R8 64-pin LQFP64 package pinout
Doc ID 023337 Rev 123/109
Pin descriptionSTM8L052R8
Table 3.Legend/abbreviation for Tabl e 4
Typ eI= input, O = output, S = power supply
FTFive-volt tolerant
Level
Port and control
configuration
Reset state
Table 4.High density value line STM8L05xxx pin description
TT3.6 V tolerant
OutputHS = high sink/source (20 mA)
Inputfloat = floating, wpu = weak pull-up
OutputT = true open drain, OD = open drain, PP = push pull
Bold X (pin state after reset release).
Unless otherwise specified, the pin state is the same during the reset phase (i.e.
“under reset”) and after internal reset release (i.e. at reset state).
Pin
number
LQFP64
2NRST/PA1
PA2/OSC_IN/
3
[USART1_TX]
[SPI1_MISO]
PA3/OSC_OUT/[USART1_
4
RX]
PA4/TIM2_BKIN/
5
[TIM2_ETR]
LCD_COM0/ADC1_IN2
PA5/TIM3_BKIN/
6
[TIM3_ETR]
LCD_COM1/ADC1_IN1
Pin name
(1)
(8)
/[SPI1_MOSI]
(8)
(8)
(8)
(8)
InputOutput
Type
I/O level
wpu
floating
OD
PP
Default alternate function
(after reset)
Main function
Ext. interrupt
High sink/source
I/OXHS XX ResetPA 1
HSE oscillator input /
/
I/OXXXHS XX Port A2
[USART1 transmit] / [SPI1
master in- slave out]
HSE oscillator output /
(8)
I/OXXXHS XX Port A3
[USART1 receive]/ [SPI1
master out/slave in]/
Timer 2 - break input
/[Timer 2 - trigger]/
/
I/O FT
(2)
XXXHSXXPort A4
LCD COM 0 / ADC1 input 2
Timer 3 - break input
/
I/O FT
(2)
XXXHSXXPort A5
/[Timer 3 - trigger]/
LCD_COM 1 / ADC1 input
1
PA 6/ [ADC1_TRIG]/
7
LCD_COM2/ADC1_IN0
PA7/LCD_SEG0
8
/TIM5_CH1
(3)
PB0
31
/TIM2_CH1/
LCD_SEG10/ADC1_IN18
PB1/TIM3_CH1/
32
LCD_SEG11/
(2)
I/O FT
I/O FT
I/O FT
I/O FT
(2)
XXXHSXXPort A6
(2)
XXXHSXXPort A7
(2)
XXXHSXXPort B0
(2)
XXXHSXXPort B1
ADC1_IN17
24/109Doc ID 023337 Rev 1
[ADC1 - trigger] /
LCD_COM2 /
ADC1 input 0
LCD segment 0/ TIM5
channel 1
Timer 2 - channel 1 / LCD
segment 10 / ADC1_IN18
Timer 3 - channel 1 / LCD
segment 11 / ADC1_IN17
STM8L052R8Pin description
Table 4.High density value line STM8L05xxx pin description (continued)
Table 4.High density value line STM8L05xxx pin description (continued)
Pin
number
LQFP64
Pin name
Typ e
InputOutput
I/O level
wpu
floating
OD
PP
Main function
Default alternate function
(after reset)
Ext. interrupt
High sink/source
16PG2/USART3_CKI/O FT
17PG3[TIM3_ETR]I/O FT
9V
SSA/VREF-
55V
DD2
56V
SS2
(6)
PA 0
1
/[USART1_CK]
SWIM/BEEP/IR_TIM
(8)
(7)
S
SIOs supply voltage
SIOs ground voltage
/
I/OXXX
(2)
XXXHSXXPort G2
(2)
XXXHSXXPort G3 [Timer 3 - trigger]
Analog ground voltage /
ADC1 negative voltage reference
HS
XXPort A0
USART 3 synchronous
clock
[USART1 synchronous
(8)
clock]
/ SWIM input and
output /Beep output
/ Infrared Timer output
29V
DD3
30V
SS3
1. At power-up, the PA1/NRST pin is a reset input pin with pull-up. To be used as a general purpose pin (PA1), it can be
configured only as output open-drain or push-pull, not as a general purpose input. Refer to Section Configuring NRST/PA1 pin as general purpose output in the STM8L15x and STM8L16x reference manual (RM0031).
2. In the 5 V tolerant I/Os, protection diode to V
3. A pull-up is applied to PB0 and PB4 during the reset phase. These two pins are input floating after reset release.
4. In the open-drain output column, ‘T’ defines a true open-drain I/O (P-buffer, weak pull-up and protection diode to V
not implemented).
5. SEG/COM multiplexing available on medium+ and high density devices. SEG signals are available by default (see
reference manual for details).
6. The PA0 pin is in input pull-up during the reset phase and after reset release.
7. High Sink LED driver capability available on PA0.
8. [ ] Alternate function remapping option (if the same alternate function is shown twice, it indicates an exclusive choice not
aduplication of the function).
SIOs supply voltage
SIOs ground voltage
is not implemented.
DD
DD
are
28/109Doc ID 023337 Rev 1
STM8L052R8Pin description
4.1 System configuration options
As shown in Table 4: High density value line STM8L05xxx pin description, some alternate
functions can be remapped on different I/O ports by programming one of the two remapping
registers described in the “ Routing interface (RI) and system configuration controller”
section in the STM8L15x and STM8L16x reference manual (RM0031).
Doc ID 023337 Rev 129/109
Memory and register mapSTM8L052R8
GPIO and peripheral registers
0x00 0000
Reserved
High density
(64 Kbytes)
Reset and interrupt vectors
0x00 1000
0x00 10FF
0x00 07FF
RAM (4 Kbytes)
(1)
(513 bytes)
(1)
0x00 1100
Data EEPROM
0x00 4800
0x00 48FF
0x00 4900
0x00 7FFF
0x00 8000
0x00 FFFF
0x00 0800
0x00 0FFF
0x00 47FF
0x00 7EFF
0x00 8080
0x00 807F
0x00 7F00
Reserved
including
Stack
(256 bytes)
Option bytes
0x00 4FFF
0x00 5000
0x00 57FF
0x00 5800
Reserved
0x00 5FFF
Boot ROM
0x00 6000
0x00 67FF
(2 Kbytes)
0x00 6800
Reserved
CPU/SWIM/Debug/ITC
Registers
0x00 5000
GPIO Ports
0x00 5050
Flash
0x00 50C0
ITC-EXTI
0x00 50D3
RST
0x00 50E0
CLK
0x00 50F0
WWDG
0x00 5210
IWDG
0x00 5230
BEEP
0x00 5250
RTC
0x00 5280
SPI1
0x00 52E0
I2C1
0x00 52FF
USART1
TIM2
TIM3
TIM1
TIM4
IRTIM
ADC1
0x00 5070
DMA1
SYSCFG
SPI2
USART2
0x00 509D
0x00 50A0
0x00 50B0
0x00 5140
0x00 5200
0x00 5300
0x00 5340
0x00 5380
0x00 53F0
0x00 5430
0x00 5440
Flash program memory
WFE
0x00 50A6
0x00 50B2
PWR
Reserved
Reserved
0x00 53C0
Reserved
RI
LCD
USART3
0x00 53E0
0x00 5400
0x00 5444
TIM5
0x00 52B0
5 Memory and register map
5.1 Memory mapping
The memory map is shown in Figure 4.
Figure 4.Memory map
1. Table 5 lists the boundary addresses for each memory size. The top of the stack is at the RAM end
address.
2. Refer to Table 7 for an overview of hardware register mapping, to Table 6 for details on I/O port hardware
registers, and to Table 8 for information on CPU/SWIM/debug module controller registers.
30/109Doc ID 023337 Rev 1
STM8L052R8Memory and register map
Table 5.Flash and RAM boundary addresses
Memory areaSizeStart addressEnd address
RAM4 Kbytes0x00 00000x00 0FFF
Flash program memory64 Kbytes0x00 80000x01 7FFF
5.2 Register map
Table 6.I/O port hardware register map
0x00 5000
0x00 5001PA_IDRPort A input pin value register0xXX
0x00 5002PA_DDRPort A data direction register0x00
0x00 5003PA_CR1Port A control register 10x01
0x00 5004PA_CR2Port A control register 20x00
0x00 5005
0x00 5006PB_IDRPort B input pin value register0xXX
0x00 5007PB_DDRPort B data direction register0x00
0x00 5008PB_CR1Port B control register 10x00
AddressBlockRegister labelRegister name
PA_ODRPort A data output latch register0x00
Por t A
PB_ODRPort B data output latch register0x00
Por t B
Reset
status
0x00 5009PB_CR2Port B control register 20x00
0x00 500A
PC_ODRPort C data output latch register0x00
0x00 500BPC_IDRPort C input pin value register0xXX
0x00 500CPC_DDRPort C data direction register0x00
Por t C
0x00 500DPC_CR1Port C control register 10x00
0x00 500EPC_CR2Port C control register 20x00
0x00 500F
PD_ODRPort D data output latch register0x00
0x00 5010PD_IDRPort D input pin value register0xXX
0x00 5011PD_DDRPort D data direction register0x00
Por t D
0x00 5012PD_CR1Port D control register 10x00
0x00 5013PD_CR2Port D control register 20x00
0x00 5014
PE_ODRPort E data output latch register0x00
0x00 5015PE_IDRPort E input pin value register0xXX
0x00 5016PE_DDRPort E data direction register0x00
Por t E
0x00 5017PE_CR1Port E control register 10x00
0x00 5018PE_CR2Port E control register 20x00
Doc ID 023337 Rev 131/109
Memory and register mapSTM8L052R8
Table 6.I/O port hardware register map (continued)
AddressBlockRegister labelRegister name
0x00 5019
PF_ODRPort F data output latch register0x00
0x00 501APF_IDRPort F input pin value register0xXX
0x00 501BPF_DDRPort F data direction register0x00
Por t F
0x00 501CPF_CR1Port F control register 10x00
0x00 501DPF_CR2Port F control register 20x00
0x00 501E
PG_ODRPort F data output latch register0x00
0x00 501FPG_IDRPort G input pin value register0xXX
1. The Low power wait mode is entered when executing a WFE instruction in Low power run mode.
2. The TLI interrupt is the logic OR between TIM2 overflow interrupt, and TIM4 overflow interrupts.
3. The interrupt from PVD is logically OR-ed with Port E and F interrupts. Register EXTI_CONF allows to select between Port
4. The device is woken up from Halt or Active-halt mode only when the address received matches the interface address.
5. In WFE mode, this interrupt is served if it has been previously enabled. After processing the interrupt, the processor goes
2
C1/SPI2I2C1 interrupt
E and Port F interrupt (see External interrupt port select register (EXTI_CONF)in the RM0031).
back to WFE mode. When this interrupt is configured as a wakeup event, the CPU wakes up and resumes processing.
(4)
/ S P I 2Ye sYesYe sYe s
(5)
0x00 807C
Doc ID 023337 Rev 151/109
Option bytesSTM8L052R8
7 Option bytes
Option bytes contain configurations for device hardware features as well as the memory
protection of the device. They are stored in a dedicated memory block.
All option bytes can be modified in ICP mode (with SWIM) by accessing the EEPROM
address. See Tabl e 1 0 for details on option byte addresses.
The option bytes can also be modified ‘on the fly’ by the application in IAP mode, except for
the ROP, UBC and PCODESIZE values which can only be taken into account when they are
modified in ICP mode (with the SWIM).
Refer to the STM8Lxx Flash programming manual (PM0054) and STM8 SWIM and Debug
Manual (UM0320) for information on SWIM programming procedures.
Table 10.Option byte addresses
Option
AddressOption name
Read-out
00 4800
00 4802
00 4807PCODESIZEOPT2PCODE[7:0]0x00
00 4808
00 4809
00 480A
00 480BBootloader
00 480C0x00
protection
(ROP)
UBC (User
Boot code size)
Independent
watchdog
option
Number of
stabilization
clock cycles for
HSE and LSE
oscillators
Brownout reset
(BOR)
option bytes
(OPTBL)
byte
No.
OPT0ROP[7:0]0x00
OPT1UBC[7:0]0x00
OPT3
[3:0]
OPT4ReservedLSECNT[1:0]HSECNT[1:0]0x00
OPT5
[3:0]
OPTBL
[15:0]
7654 3 2 1 0
Reserved
ReservedBOR_TH
Option bitsFactory
default
setting
WWDG
_HALT
OPTBL[15:0]
WWDG
_HW
IWDG
_HALT
IWDG
_HW
BOR_
ON
0x00
0x01
0x00
52/Doc ID 023337 Rev 1
STM8L052R8Option bytes
Table 11.Option byte description
Option
byte no.
OPT0
OPT1
OPT2
OPT3
OPT4
Option description
ROP[7:0] Memoryreadout protection (ROP)
0xAA: Disable readout protection (write access via SWIM protocol)
Refer to Readout protection section in the STM8L reference manual (RM0031).
UBC[7:0] Size of the user boot code area
UBC[7:0] Size of the user boot code area
0x00: No UBC
0x01: Page 0 reserved for the UBC and write protected.
...
0xFF: Page 0 to 254 reserved for the UBC and write-protected.
Refer to User boot code section in the STM8L reference manual (RM0031).
PCODESIZE[7:0] Size of the proprietary code area
0x00: No proprietary code area
0x01: Page 0 reserved for the proprietary code and read/write protected.
...
0xFF: Page 0 to 254 reserved for the proprietary code and read/write protected.
Refer to Proprietary code area (PCODE) section in the STM8L reference manual
(RM0031) for more details.
IWDG_HW: Independent watchdog
0: Independent watchdog activated by software
1: Independent watchdog activated by hardware
IWDG_HALT: Independent watchdog off in Halt/Active-halt
0: Independent watchdog continues running in Halt/Active-halt mode
1: Independent watchdog stopped in Halt/Active-halt mode
WWDG_HW: Window watchdog
0: Window watchdog activated by software
1: Window watchdog activated by hardware
WWDG_HALT: Window window watchdog reset on Halt/Active-halt
0: Window watchdog stopped in Halt mode
1: Window watchdog generates a reset when MCU enters Halt mode
HSECNT: Number of HSE oscillator stabilization clock cycles
BOR_TH[3:1]: Brownout reset thresholds. Refer to Ta bl e 1 6 for details on the thresholds
according to the value of BOR_TH bits.
OPTBL[15:0]:
This option is checked by the boot ROM code after reset. Depending on the content of
addresses 00 480B, 00 480C and 0x8000 (reset vector) the CPU jumps to the
bootloader or to the reset vector.
Refer to the UM0560 bootloader user manual for more details.
54/Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
50 pF
STM8L PIN
8 Electrical parameters
8.1 Parameter conditions
Unless otherwise specified, all voltages are referred to VSS.
8.1.1 Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at T
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3Σ).
8.1.2 Typical values
= 25 °C and TA = TA max (given by
A
Unless otherwise specified, typical data are based on TA = 25 °C, V
only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated
8.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
8.1.4 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 5.
Figure 5.Pin loading conditions
(mean±2Σ).
= 3 V. They are given
DD
Doc ID 023337 Rev 155/103
Electrical parametersSTM8L052R8
V
IN
STM8L PIN
8.1.5 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 6.
Figure 6.Pin input voltage
8.2 Absolute maximum ratings
Stresses above those listed as “absolute maximum ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Table 12.Voltage characteristics
SymbolRatingsMinMaxUnit
- V
V
DD
SS
(2)
V
IN
External supply voltage
(including V
DDA
(1)
)
Input voltage on true open-drain pins
(PC0 and PC1)
Input voltage on five-volt tolerant (FT)
pins
Input voltage on any other pin
- 0.34.0
V
- 0.3VDD + 4.0
SS
- 0.3V
V
SS
- 0.34.0
V
SS
DD
+ 4.0
see Absolute maximum
V
ESD
Electrostatic discharge voltage
ratings (electrical sensitivity)
on page 102
1. All power (V
be connected to the external power supply.
2. VIN maximum must always be respected. Refer to Table 13. for maximum allowed injected current values.
DD1
, V
DD2
, V
DD3
, V
DD4
, V
) and ground (V
DDA
SS1
, V
SS2
, V
SS3
, V
SS4
, V
) pins must always
SSA
V
56/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
Table 13.Current characteristics
SymbolRatings Max.Unit
I
VDD
I
VSS
I
IO
Total current into V
Total current out of V
Output current sunk by IR_TIM pin
(with high sink LED driver capability)
power line (source)80
DD
ground line (sink)80
SS
80
Output current sunk by any other I/O and control pin25
Output current sourced by any I/Os and control pin- 25
Injected current on true open-drain pins (PC0 and PC1)
INJ(PIN)
INJ(PIN)
Injected current on five-volt tolerant (FT) pins
Injected current on any other pin
Total injected current (sum of all I/O and control pins)
(2)
I
ΣI
1. Positive injection is not possible on these I/Os. A negative injection is induced by VIN<VSS. I
never be exceeded. Refer to Table 12. for maximum allowed input voltage values.
2. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. I
never be exceeded. Refer to Table 12. for maximum allowed input voltage values.
3. When several inputs are submitted to a current injection, the maximum ΣI
positive and negative injected currents (instantaneous values).
Table 14.Thermal characteristics
(1)
(1)
(3)
is the absolute sum of the
INJ(PIN)
- 5 / +0
- 5 / +0
- 5 / +5
± 25
INJ(PIN)
INJ(PIN)
must
SymbolRatingsValueUnit
mA
must
T
STG
T
J
Storage temperature range-65 to +150
° C
Maximum junction temperature150
Doc ID 023337 Rev 157/103
Electrical parametersSTM8L052R8
8.3 Operating conditions
Subject to general operating conditions for VDD and TA.
8.3.1 General operating conditions
Table 15.General operating conditions
SymbolParameter ConditionsMin.Max.Unit
System clock
f
SYSCLK
1. f
2. To calculate P
3. T
(1)
frequency
V
DD
V
DDA
(2)
P
D
T
A
T
J
SYSCLK
characteristics” table.
Jmax
Standard operating
voltage
Analog operating
voltage
Power dissipation at
= 85 °C
T
A
Temperature range1.8 V ≤ V
Junction temperature
range
= f
CPU
), use the formula P
Dmax(TA
is given by the test limit. Above this value the product behavior is not guaranteed.
Dmax
1.8 V ≤ V
Must be at the same
potential as V
-40 °C ≤ T
=(T
-TA)/ΘJA with T
Jmax
< 3.6 V016MHz
DD
DD
LQFP64288mW
< 3.6 V-4085
DD
<85 °C-40105
A
Jmax
1.83.6V
1.83.6V
in this table and Θ
in “Thermal
JA
(3)
°C
58/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
8.3.2 Embedded reset and power control block characteristics
Table 16.Embedded reset and power control block characteristics
Symbol ParameterConditionsMin.
t
VDD
VDD rise time rate
V
fall time rate
DD
BOR detector
enabled
BOR detector
disabled
BOR detector
enabled
BOR detector
disabled
rising
V
DD
(1)
0
(1)
0
(1)
20
Reset below voltage functional range
BOR detector
enabled
t
TEMP
Reset release delay
V
DD
rising
BOR detector
disabled
V
V
V
V
V
V
V
POR
PDR
BOR0
BOR1
BOR2
BOR3
BOR4
Power-on reset threshold Rising edge1.3
Power-down reset threshold Falling edge1.3
Brown-out reset threshold 0
(BOR_TH[2:0]=000)
Brown-out reset threshold 1
(BOR_TH[2:0]=001)
Brown-out reset threshold 2
(BOR_TH[2:0]=010)
Brown-out reset threshold 3
(BOR_TH[2:0]=011)
Brown-out reset threshold 4
(BOR_TH[2:0]=100)
Falling edge1.671.71.74
Rising edge1.691.751.80
Falling edge1.871.931.97
Rising edge1.962.042.07
Falling edge2.222.32.35
Rising edge2.312.412.44
Falling edge2.452.552.60
Rising edge2.542.662.7
Falling edge2.682.802.85
Rising edge2.782.902.95
(2)
(2)
Typ.
Max.Unit
∞
(1)
1
∞
3
1
1.51.65
1.51.65
(1)
(1)
µs/V
ms/V
µs/V
ms
V
Doc ID 023337 Rev 159/103
Electrical parametersSTM8L052R8
Table 16.Embedded reset and power control block characteristics (continued)
Symbol ParameterConditionsMin.
Typ.
Max.Unit
V
V
V
V
V
V
V
PVD0
PVD1
PVD2
PVD3
PVD4
PVD5
PVD6
PVD threshold 0
PVD threshold 1
PVD threshold 2
PVD threshold 3
PVD threshold 4
PVD threshold 5
PVD threshold 6
VhystHysteresis voltage
Falling edge1.801.841.88
Rising edge1.881.941.99
Falling edge1.982.042.09
Rising edge2.082.142.18
Falling edge2.22.242.28
Rising edge2.282.342.38
Falling edge2.392.442.48
Rising edge2.472.542.58
Falling edge2.572.642.69
Rising edge2.682.742.79
Falling edge2.772.832.88
Rising edge2.872.942.99
Falling edge2.973.053.09
Rising edge3.083.153.20
BOR0 threshold40
All BOR and PVD
thresholds
100
excepting BOR0
V
mV
1. Data guaranteed by design, not tested in production.
2. Data based on characterization results, not tested in production.
60/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
VDD/V
DDA
PVD output
100 mV
hysteresis
V
PVD
V
BOR
hyster esi s
100 mV
IT enabled
BOR reset
(NRST)
POR/PDR reset
(NR ST)
PVD
BOR alwaysactive
POR/PDR (BOR not available)
ai17211b
POR
V
/
PDR
V
BOR/PDR reset
(NRST)
BOR disabled by option byte
(Note 1)
(Note 2)
(Note 3)
(Note 4)
Figure 7.Power supply thresholds
Doc ID 023337 Rev 161/103
Electrical parametersSTM8L052R8
8.3.3 Supply current characteristics
Total current consumption
The MCU is placed under the following conditions:
●All I/O pins in input mode with a static value at V
●All peripherals are disabled except if explicitly mentioned.
In the following table, data are based on characterization results, unless otherwise specified.
or VSS (no load)
DD
Subject to general operating conditions for V
Table 17.Total current consumption in Run mode
SymbolParameter
I
DD(RUN)
Supply
current in
run mode
All peripherals
OFF,
code executed
from RAM,
(2)
V
DD
to
3.6 V
from 1.8 V
Conditions
HSI RC osc.
(16 MHz)
(3)
HSE external
clock
(f
CPU=fHSE
(5)
)
LSI RC osc.
(typ. 38 kHz)
(1)
f
f
f
f
f
f
f
f
f
f
f
DD
= 125 kHz
CPU
= 1 MHz
CPU
= 4 MHz
CPU
= 8 MHz
CPU
= 16 MHz
CPU
= 125 kHz
CPU
= 1 MHz
CPU
= 4 MHz
CPU
= 8 MHz
CPU
= 16 MHz
CPU
= f
CPU
and TA.
LSI
Max.
Typ.
55°C85 °C
0.220.280.39
0.320.380.49
0.590.650.76
0.930.991.1
1.621.681.79
0.210.250.35
0.30.340.44
0.570.610.71
0.950.991.09
1.731.771.87
0.0290.0350.039
Unit
(4)
mA
(4)
LSE external
= f
clock
f
CPU
(32.768 kHz)
62/103Doc ID 023337 Rev 1
LSE
0.0280.0340.038
STM8L052R8Electrical parameters
Table 17.Total current consumption in Run mode (continued)
SymbolParameter
Conditions
(1)
Typ.
55°C85 °C
Max.
f
I
DD(RUN)
Supply
current
in Run
mode
All peripherals
OFF, code
executed from
Flash,
from 1.8 V
V
DD
to 3.6 V
HSI RC
(6)
osc.
HSE external
clock
(f
CPU=fHSE
)
LSI RC osc.
(5)
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
f
CPU
= 125 kHz
= 1 MHz
= 4 MHz
= 8 MHz
= 16 MHz
= 125 kHz
= 1 MHz
= 4 MHz
= 8 MHz
= 16 MHz
= f
LSI
0.350.460.48
0.540.650.67
1.161.271.29
1.972.082.1
3.543.653.67
0.350.440.46
0.530.620.64
1.131.221.24
22.092.11
3.693.783.8
0.1100.1230.130
LSE external
clock
(32.768 kHz)
1. All peripherals OFF, VDD from 1.8 V to 3.6 V, HSI internal RC osc., f
2. CPU executing typical data processing
3. The run from RAM consumption can be approximated with the linear formula:
(run_from_RAM) = Freq. * 95 µA/MHz + 250 µA
I
DD
4. Tested in production.
5. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption
6. The run from Flash consumption can be approximated with the linear formula:
7. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption
) must be added. Refer to Table 28.
(I
DD HSE
(run_from_Flash) = Freq. * 200 µA/MHz + 330 µA
I
DD
) must be added. Refer to Table 29
(I
DD LSE
(7)
f
= f
CPU
CPU=fSYSCLK
LSE
0.1000.1010.104
Unit
mA
Doc ID 023337 Rev 163/103
Electrical parametersSTM8L052R8
Figure 8.Typical I
2
1.8
1.6
1.4
1.2
1
0.8
0.6
IDD Run HSI 16MHz (mA)
0.4
0.2
0
1.822.22.42.62.833.23.43.6
DD(RUN)
from RAM vs. VDD (HSI clock source), f
VDD (V)
1. Typical current consumption measured with code executed from RAM.
Figure 9.Typical I
DD(RUN)
from Flash vs. V
(HSI clock source), f
DD
=16 MHz
CPU
25°C
85 °C
-40°C
= 16 MHz
CPU
1)
MS19109V2
1)
4
3.5
3
2.5
IDD Run HSI EEP 16MHz (m A)
2
1.5
1.822.22.42.62.833. 23.43.6
VDD (V)
1. Typical current consumption measured with code executed from Flash.
25°C
85°C
-
40°C
MS19112V2
64/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
In the following table, data are based on characterization results, unless otherwise specified.
Table 18.Total current consumption in Wait mode
Symbol Parameter
Conditions
(1)
Typ
55°C
= 125 kHz
Max
f
CPU
f
= 1 MHz
CPU
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
= f
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
CPU
SYSCLK
= 4 MHz
= 8 MHz
= 16 MHz
= 125 kHz
= 1 MHz
= 4 MHz
= 8 MHz
= 16 MHz
= f
LSI
= f
LSE
= 125 kHz
= 1 MHz
= 4 MHz
= 8 MHz
= 16 MHz
= 125 kHz
= 1 MHz
= 4 MHz
= 8 MHz
= 16 MHz
= f
LSI
= f
LSE
HSI
CPU not
clocked,
all peripherals
OFF,
code executed
from RAM
with Flash in I
(2)
mode,
HSE external clock
DDQ
(f
CPU=fHSE
(4)
)
VDD from
1.8 V to 3.6 V
LSI
(5)
external clock
LSE
(32.768 kHz)
I
DD(Wait)
Supply
current in
Wait mode
HSI
CPU not
clocked,
all peripherals
OFF,
code executed
from Flash,
from
V
DD
1.8 V to 3.6 V
HSE
(f
CPU
HSE)
(4)
=
external clock
LSI
(5)
external clock
LSE
(32.768 kHz)
1. All peripherals OFF, VDD from 1.8 V to 3.6 V, HSI internal RC osc., f
2. Flash is configured in I
3. Tested in production.
4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption
) must be added. Refer to Table 28.
(I
DD HSE
mode in Wait mode by setting the EPM or WAITM bit in the Flash_CR1 register.
DDQ
CPU
0.210.290.33
0.250.330.37
0.320.40.44
0.42 0.4960.54
0.66 0.736 0.78
0.190.210.3
0.20.230.32
0.270.30.39
0.370.40.49
0.630.660.75
0.028 0.037 0.039
0.027 0.035 0.038
0.270.360.42
0.290.380.44
0.370.460.52
0.450.550.61
0.690.790.85
0.230.290.32
0.240.310.34
0.320.390.42
0.420.490.51
0.70.770.79
0.037 0.085 0.105
0.036 0.082 0.095
Unit
85 °C
(3)
mA
(3)
mA
Doc ID 023337 Rev 165/103
Electrical parametersSTM8L052R8
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.822.22.42. 62. 833.23. 43.6
DD
MS19108V2
5. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption
) must be added. Refer to Table 29
(I
DD HSE
Figure 10. Typical I
DD(Wait)
0.8
0.7
0.6
0.5
0.4
IDD Wait HSI 16MHz (mA)
0.3
0.2
1.822.22.42. 62.833.23.43.6
from RAM vs. V
VDD (V)
(HSI clock source), f
DD
25°C
85°C
-
40°C
= 16 MHz
CPU
MS19113V2
1. Typical current consumption measured with code executed from RAM.
1)
Figure 11. Typical I
IDD Wfi HSI 16MHz EEON (mA)
1. Typical current consumption measured with code executed from Flash.
DD(Wait)
from Flash (HSI clock source), f
V
(V)
= 16 MHz
CPU
1)
25°C
85°C
-40°C
66/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
In the following table, data are based on characterization results, unless otherwise specified.
Table 19.Total current consumption and timing in Low power run mode at V
= 1.8 V to
DD
3.6 V
Symbol
Parameter
Conditions
all peripherals OFF
LSI RC osc.
(at 38 kHz)
with TIM2 active
I
DD(LPR)
Supply current in Low
power run mode
all peripherals OFF
(3)
LSE
external
clock
(32.768 kHz)
with TIM2 active
1. No floating I/Os
2. Timer 2 clock enabled and counter running
3. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption
) must be added. Refer to Table 29
(I
DD LSE
(1)
(2)
(2)
Typ.Max.Unit
= -40 °C
T
A
to 25 °C
T
= 55 °C6.527.06
A
= 85 °C7.688.7
T
A
T
= -40 °C
A
to 25 °C
T
= 55 °C6.867.41
A
= 85 °C9.7110.81
T
A
TA = -40 °C
to 25 °C
T
= 55 °C5.96.52
A
= 85 °C6.146.8
T
A
TA = -40 °C
to 25 °C
T
= 55 °C6.446.95
A
= 85 °C6.77.65
T
A
5.866.38
6.26.73
5.425.94
5.876.48
μA
Doc ID 023337 Rev 167/103
Electrical parametersSTM8L052R8
Figure 12. Typical I
0.02
0.015
0.01
IDD LpRun L SI all off (m A)
0.005
0
1.822. 22.42.62.833.23.43. 6
DD(LPR)
vs. V
(LSI clock source), all peripherals OFF
DD
VDD (V)
25°C
85°C
- 40°C
MS19110V2
68/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
0
0.005
0.01
0.015
0.02
1.822.22.42.62.833.23.43.6
LpWfi ram LSI all o ff (m
VDD(V)
°C
0°C
.47
°C
In the following table, data are based on characterization results, unless otherwise specified.
Table 20.Total current consumption in Low power wait mode at V
Symbol
I
DD(LPW)
1. No floating I/Os.
2. Timer 2 clock enabled and counter is running.
3. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption
(I
DD LSE
Parameter
LSI RC osc.
(at 38 kHz)
Supply current in
Low power wait
mode
LSE external
(3)
clock
(32.768 kHz)
) must be added. Refer to Table 29.
Conditions
all peripherals OFF
with TIM2 active
(2)
all peripherals OFF
with TIM2 active
(2)
= 1.8 V to 3.6 V
DD
(1)
= -40 °C to 25 °C
T
A
T
= 55 °C3.383.78
A
= 85 °C4.65.34
T
A
TA = -40 °C to 25 °C
T
= 55 °C4.134.57
A
T
= 85 °C5.296.08
A
TA = -40 °C to 25 °C
T
= 55 °C2.583.07
A
= 85 °C3.324.05
T
A
TA = -40 °C to 25 °C
= 55 °C2.973.42
T
A
T
= 85 °C3.694.55
A
Typ.Max. Unit
3.033.41
3.784.21
μA
2.462.89
2.883.29
Figure 13. Typical I
A)
IDD
DD(LPW)
vs. V
(LSI clock source), all peripherals OFF
DD
1. Typical current consumption measured with code executed from RAM.
(1)
25
85
-4
Doc ID 023337 Rev 169/103
Electrical parametersSTM8L052R8
In the following table, data are based on characterization results, unless otherwise specified.
Table 21.Total current consumption and timing in Active-halt mode
Symbol
at V
= 1.8 V to 3.6 V
DD
Parameter
Conditions
(1)
Typ. Max. Unit
I
DD(AH)
I
DD(AH)
I
DD(WUFAH)
Supply current in
Active-halt mode
Supply current in
Active-halt mode
Supply current during
wakeup time from
Active-halt mode
(using HSI)
LSI RC
(at 38 kHz)
LSE external
clock
(32.768 kHz)
(6)
LCD OFF
(2)
LCD ON
(static duty/
external
(3)
)
V
LCD
LCD ON
(1/4 duty/
external
(4)
)
V
LCD
LCD ON
(1/4 duty/
internal
(5)
)
V
LCD
LCD OFF
(7)
LCD ON
(static duty/
external
(3)
V
)
LCD
LCD ON
(1/4 duty/
external
(4)
V
)
LCD
LCD ON
(1/4 duty/
internal
(5)
)
V
LCD
TA = -40 °C to 25 °C
T
= 55 °C1.323.44
A
= 85 °C1.633.87
T
A
TA = -40 °C to 25 °C
T
= 55 °C1.643.8
A
= 85 °C2.125.03
T
A
TA = -40 °C to 25 °C
T
= 55 °C2.14.97
A
= 85 °C2.66.14
T
A
TA = -40 °C to 25 °C
T
= 55 °C4.39 10.32
A
= 85 °C4.8411.5
T
A
TA = -40 °C to 25 °C
T
= 55 °C0.611.44
A
= 85 °C0.912.27
T
A
TA = -40 °C to 25 °C
= 55 °C1.052.55
T
A
= 85 °C1.423.65
T
A
TA = -40 °C to 25 °C
= 55 °C1.764.37
T
A
= 85 °C2.145.23
T
A
TA = -40 °C to 25 °C
T
= 55 °C3.899.15
A
= 85 °C4.25 10.49
T
A
0.922.25
1.563.6
1.924.56
4.29.88
0.541.35
0.912.13
1.62.84
3.899.15
2.4mA
μA
μA
Wakeup time from
(8)(9)
t
WU_HSI(AH)
Active-halt mode to
Run mode (using HSI)
Wakeup time from
(8)(9)
t
WU_LSI(AH)
Active-halt mode to
Run mode (using LSI)
70/103Doc ID 023337 Rev 1
4.77μs
150μs
STM8L052R8Electrical parameters
0
0.005
0.01
0.015
0.02
1.822.22.42. 62.833. 23.43. 6
AHalt (m
25°C
85°C
-40°C
MS19117V2
1. No floating I/O, unless otherwise specified.
2. RTC enabled. Clock source = LSI
3. RTC enabled, LCD enabled with external V
4. RTC enabled, LCD enabled with external V
5. LCD enabled with internal LCD booster V
connected.
6. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption
(I
) must be added. Refer to Table 29
DD LSE
7. RTC enabled. Clock source = LSE
8. Wakeup time until start of interrupt vector fetch.
The first word of interrupt routine is fetched 4 CPU cycles after t
9. ULP=0 or ULP=1 and FWU=1 in the PWR_CSR2 register.
= 3 V, static duty, division ratio = 256, all pixels active, no LCD connected.
LCD
, 1/4 duty, 1/3 bias, division ratio = 64, all pixels active, no LCD connected.
LCD
= 3 V, 1/4 duty, 1/3 bias, division ratio = 64, all pixels active, no LCD
LCD
.
WU
Table 22.Typical current consumption in Active-halt mode, RTC clocked by LSE external crystal
SymbolParameter Condition
(1)
Typ .Unit
LSE1.2
= 1.8 V
V
I
DD(AH)
(2)
Supply current in Active-halt
mode
DD
V
DD
= 3 V
(3)
LSE/32
LSE1.4
(3)
LSE/32
0.9
µA
1.1
LSE1.6
V
= 3.6 V
DD
1. No floating I/O, unless otherwise specified.
2. Based on measurements on bench with 32.768 kHz external crystal oscillator.
3. RTC clock is LSE divided by 32.
Figure 14. Typical I
A)
DD(AH)
vs. V
(LSI clock source)
DD
LSE/32
(3)
1.3
IDD
Doc ID 023337 Rev 171/103
VDD(V)
Electrical parametersSTM8L052R8
In the following table, data are based on characterization results, unless otherwise specified.
Table 23.Total current consumption and timing in Halt mode at V
Symbol
Parameter
Condition
(1)
= 1.8 to 3.6 V
DD
Typ.Max. Unit
Supply current in Halt mode
I
DD(Halt)
(Ultra low power ULP bit =1 in
the PWR_CSR2
register)
Supply current during wakeup
I
DD(WUHalt)
time from Halt mode (using
HSI)
t
WU_HSI(Halt)
t
WU_LSI(Halt)
(3)(4)
(3)(4)
1. TA = -40 to 85 °C, no floating I/O, unless otherwise specified
2. Tested in production
3. ULP=0 or ULP=1 and FWU=1 in the PWR_CSR2 register
4. Wakeup time until start of interrupt vector fetch.
The first word of interrupt routine is fetched 4 CPU cycles after t
Figure 15. Typical I
Wakeup time from Halt to Run
mode (using HSI)
Wakeup time from Halt mode
to Run mode (using LSI)
vs. V
0.02
0.02
0.018
0.018
0.016
0.016
DD(Halt)
DD
T
= -40 °C to 25 °C400
A
= 55 °C8102400
T
A
TA = 85 °C1600
2.4mA
4.77µs
150µs
WU
(internal reference voltage OFF)
1600
4500
25°C
25°C
85°C
85°C
-40°C
(2)
nA
(2)
0.014
0.014
0.012
0.012
0.01
0.01
0.008
0.008
IDD Halt bgo ff (mA)
IDD Halt bgo ff (mA)
0.006
0.004
0.002
0
1.822.22.42.62.833.23.43.6
DD (V)
V
MS19119V2
72/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
Current consumption of on-chip peripherals
Table 24.Peripheral current consumption
SymbolParameter
I
DD(ALL)
I
DD(TIM1)
I
DD(TIM2)
I
DD(TIM3)
I
DD(TIM5)
I
DD(TIM4)
I
DD(USART1)
I
DD(USART2)
I
DD(USART3)
I
DD(SPI1)
I
DD(SPI2)
I
DD(I2C1)
I
DD(DMA1)
I
DD(WWDG)
I
DD(ADC1)
I
DD(PVD/BOR)
Peripherals ON
TIM1 supply current
TIM2 supply current
TIM3 supply current
TIM5 supply current
TIM4 timer supply current
USART1 supply current
USART2 supply current
USART3 supply current
SPI1 supply current
SPI2 supply current
I2C1 supply current
DMA1 supply current3
WWDG supply current1
ADC1 supply current
Power voltage detector and brownout Reset unit supply current
(5)
(1)
(2)
(2)
(2)
(2)
(2)
(3)
(3)
(3)
(3)
(3)
(3)
(4)
V
DD
Typ.
= 3.0 V
63
10
7
7
7
3
5
5
5
3
3
4
1500
2.6
Unit
µA/MHz
I
DD(BOR)
I
DD(IDWDG)
1. Peripherals listed above the I
SPI2, I2C1, DMA1, WWDG.
2. Data based on a differential I
CPU is in Wait mode in both cases. No IC/OC programmed, no I/O pins toggling. Not tested in production.
3. Data based on a differential I
the on-chip peripheral when clocked and not kept under reset. The CPU is in Wait mode in both cases. No I/O pins
toggling. Not tested in production.
4. Data based on a differential I
5. Including supply current of internal reference voltage.
measurement between all peripherals OFF and a timer counter running at 16 MHz. The
DD
measurement between the on-chip peripheral in reset configuration and not clocked and
DD
measurement between ADC in reset configuration and continuous ADC conversion.
DD
(5)
including LSI supply
current
excluding LSI
supply current
2.4
0.45
0.05
Doc ID 023337 Rev 173/103
µA
Electrical parametersSTM8L052R8
Table 25.Current consumption under external reset
SymbolParameterConditionsTyp.Unit
V
= 1.8 V48
I
DD(RST)
1. All pins except PA0, PB0 and PB4 are floating under reset. PA0, PB0 and PB4 are configured with pull-up under reset.
PB1, PB3 and PA5 must be tied externally under reset to avoid the consumption due to their schmitt trigger.
Supply current under
external reset
(1)
PB1/PB3/PA5 pins are
externally tied to V
DD
DD
= 3 V80
DD
= 3.6 V95
V
DD
8.3.4 Clock and timing characteristics
HSE external clock (HSEBYP = 1 in CLK_ECKCR)
Subject to general operating conditions for VDD and TA.
Table 26.HSE external clock characteristics
SymbolParameterConditionsMin.Typ.Max.Unit
External clock source
f
HSE_ext
V
HSEH
V
HSEL
C
in(HSE)
I
LEAK_HSE
(1)
frequency
OSC_IN input pin high level
voltage
OSC_IN input pin low level
voltage
(1)
OSC_IN input capacitance2.6pF
OSC_IN input leakage
current
V
< V
IN
< V
DD
SS
116MHz
0.7 x V
V
SS
DD
V
DD
0.3 x V
DD
±1µA
µAV
V
1. Guaranteed by design, not tested in production.
74/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
LSE external clock (LSEBYP=1 in CLK_ECKCR)
Subject to general operating conditions for VDD and TA.
(2)
(2)
(1)
External clock source frequency32.768kHz
OSC32_IN input pin high level voltage0.7 x V
OSC32_IN input pin low level voltageV
(1)
OSC32_IN input capacitance0.6pF
SS
DD
0.3 x V
OSC32_IN input leakage current±1µA
V
DD
V
DD
Table 27.LSE external clock characteristics
SymbolParameterMin.Typ.Max.Unit
f
LSE_ext
V
LSEH
V
LSEL
C
in(LSE)
I
LEAK_LSE
1. Guaranteed by design, not tested in production.
2. Data based on characterization results, not tested in production.
HSE crystal/ceramic resonator oscillator
The HSE clock can be supplied with a 1 to 16 MHz crystal/ceramic resonator oscillator. All
the information given in this paragraph is based on characterization results with specified
typical external components. In the application, the resonator and the load capacitors have
to be placed as close as possible to the oscillator pins in order to minimize output distortion
and startup stabilization time. Refer to the crystal resonator manufacturer for more details
(frequency, package, accuracy...).
Table 28.HSE oscillator characteristics
SymbolParameterConditionsMin.Typ.Max.Unit
f
HSE
R
(1)(2)
C
I
DD(HSE)
g
t
SU(HSE)
1. C=
2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with small R
Refer to crystal manufacturer for more details
3. Guaranteed by design. Not tested in production.
4. t
SU(HSE)
value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
High speed external oscillator
frequency
Feedback resistor200kΩ
F
Recommended load capacitance
C = 20 pF,
f
= 16 MHz
HSE oscillator power consumption
OSC
C = 10 pF,
=16 MHz
f
OSC
Oscillator transconductance3.5
m
(4)
Startup time VDD is stabilized1ms
C
=
C
is approximately equivalent to 2 x crystal C
L1
L2
is the startup time measured from the moment it is enabled (by software) to a stabilized 16 MHz oscillation. This
LOAD
.
116MHz
20pF
2.5 (startup)
0.7 (stabilized)
2.5 (startup)
0.46 (stabilized)
(3)
value.
m
(3)
(3)
mA
mA/V
Doc ID 023337 Rev 175/103
Electrical parametersSTM8L052R8
OSC_OUT
OSC_IN
f
HSE
to core
C
L1
C
L2
R
F
STM8
Resonator
Consumption
control
g
m
R
m
C
m
L
m
C
O
Resonator
g
mcrit
2 Π×f
HSE
×()
2
Rm×2CoC+()
2
=
Figure 16. HSE oscillator circuit diagram
HSE oscillator critical g
Rm: Motional resistance (see crystal specification), Lm: Motional inductance (see crystal specification),
: Motional capacitance (see crystal specification), Co: Shunt capacitance (see crystal specification),
C
m
=C: Grounded external capacitance
C
L1=CL2
g
>> g
m
mcrit
formula
m
LSE crystal/ceramic resonator oscillator
The LSE clock can be supplied with a 32.768 kHz crystal/ceramic resonator oscillator. All
the information given in this paragraph is based on characterization results with specified
typical external components. In the application, the resonator and the load capacitors have
to be placed as close as possible to the oscillator pins in order to minimize output distortion
and startup stabilization time. Refer to the crystal resonator manufacturer for more details
(frequency, package, accuracy...).
Table 29.LSE oscillator characteristics
SymbolParameterConditionsMin.Typ.Max.Unit
f
LSE
R
F
(1)(2)
C
I
DD(LSE)
g
m
t
SU(LSE)
1. C=
C
2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with a small R
Refer to crystal manufacturer for more details.
3. Guaranteed by design. Not tested in production.
4. t
SU(LSE)
This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
Low speed external oscillator
frequency
32.768kHz
Feedback resistorΔV = 200 mV1.2MΩ
Recommended load capacitance
V
= 1.8 V450
DD
LSE oscillator power consumption
Oscillator transconductance3
(4)
Startup time VDD is stabilized1s
=
C
is approximately equivalent to 2 x crystal C
L1
L2
is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation.
= 3 V600
DD
= 3.6 V750
V
DD
.
LOAD
(3)
8pF
value.
m
nAV
µA/V
76/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
OSC_OUT
OSC_IN
f
LSE
C
L1
C
L2
R
F
STM8
Resonator
Consumption
control
g
m
R
m
C
m
L
m
C
O
Resonator
Figure 17. LSE oscillator circuit diagram
Internal clock sources
Subject to general operating conditions for VDD, and TA.
High speed internal RC oscillator (HSI)
In the following table, data are based on characterization results, not tested in production,
unless otherwise specified.
Table 30.HSI oscillator characteristics
Symbol
Parameter
Conditions
(1)
Min.Typ.Max.Unit
f
HSI
ACC
TRIM
t
su(HSI)
I
DD(HSI)
Frequency VDD = 3.0 V16MHz
Accuracy of HSI
oscillator (factory
HSI
calibrated)
HSI user trimming
(3)
step
HSI oscillator setup
time (wakeup time)
HSI oscillator power
consumption
= 3.0 V, TA = 25 °C-1
V
DD
1.8 V ≤ V
-40 °C ≤ T
≤ 3.6 V,
DD
≤ 85 °C
A
Trimming code ≠ multiple of 160.40.7%
Trimming code = multiple of 16± 1.5%
(2)
-55%
3.76
100140
1
(2)
(4)
(4)
µA
1. VDD = 3.0 V, TA = -40 to 85 °C unless otherwise specified.
2. Tested in production.
3. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16
(0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for
more details.
In the following table, data are based on characterization results, not tested in production.
Table 31.LSI oscillator characteristics
Symbol
Parameter
Conditions
(1)
Min.Typ.Max.Unit
f
t
su(LSI)
D
1. VDD = 1.8 V to 3.6 V, TA = -40 to 85 °C unless otherwise specified.
2. Guaranteed by Design, not tested in production.
3. This is a deviation for an individual part, once the initial frequency has been measured.
78/103Doc ID 023337 Rev 1
Frequency 263856kHz
LSI
LSI oscillator wakeup time 200
LSI oscillator frequency
drift
(3)
(LSI)
(2)
µs
0 °C ≤ TA ≤ 85 °C-1211%
STM8L052R8Electrical parameters
Figure 19. Typical LSI clock source frequency vs. V
0.04
0.038
0.036
0.034
RC32K Check (MHz)
0.032
0.03
1.822.22.42. 62.833. 23.43. 6
8.3.5 Memory characteristics
TA = -40 to 85 °C unless otherwise specified.
Table 32.RAM and hardware registers
DD
25°C
85°C
-40°C
VDD(V)
MS19116V2
SymbolParameter ConditionsMin.Typ.Max.Unit
V
RM
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
Data retention mode
(1)
Halt mode (or Reset)1.8V
Doc ID 023337 Rev 179/103
Electrical parametersSTM8L052R8
Flash memory
Table 33.Flash program and data EEPROM memory
SymbolParameter ConditionsMin. Typ.
V
Operating voltage
DD
(all modes, read/write/erase)
f
SYSCLK
= 16 MHz1.83.6V
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
t
prog
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
T
=+25 °C, VDD = 3.0 V
I
Programming/ erasing consumption
prog
Data retention (program memory) after 100
erase/write cycles at TA=−40 to +85 °C
(2)
t
RET
Data retention (data memory) after 100000
erase/write cycles at T
=−40 to +85 °C
A
Erase/write cycles (program memory)
(3)
N
RW
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
4. Data based on characterization performed on the whole data memory.
Erase/write cycles (data memory)
addresses a single byte.
A
=+25 °C, VDD = 1.8 V
T
A
T
=+85 °C30
RET
T
=+85 °C30
RET
T
=−40 to +85 °C
A
100
100
(1)
(1)
(1)
(1)
(4)
Max.
(1)
6ms
3ms
0.7mA
years
cycles
kcycles
Unit
80/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
8.3.6 I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above V
in order to give an indication of the robustness of the microcontroller in cases when
abnormal injection accidentally happens, susceptibility tests are performed on a sample
basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into the
I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error, out of spec current
injection on adjacent pins or other functional failure (for example reset, oscillator frequency
deviation, LCD levels, etc.).
The test results are given in the following table.
Table 34.
SymbolDescription
(for standard pins) should be avoided during normal product operation. However,
DD
I/O current injection susceptibility
Functional susceptibility
Negative
injection
Positive
injection
Unit
Injected current on true open-drain pins-5+0
I
INJ
Injected current on any other pin-5+5
8.3.7 I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
mAInjected current on all 5 V tolerant (FT) pins-5+0
Doc ID 023337 Rev 181/103
Electrical parametersSTM8L052R8
Table 35.I/O static characteristics
Symbol
V
IL
V
IH
V
hys
Parameter
Input low level voltage
Input high level voltage
(2)
(2)
Schmitt trigger voltage hysteresis
Conditions
(1)
Min.
Input voltage on true
open-drain pins (PC0
Vss-0.3
and PC1)
volt tolerant (FT) pins
Input voltage on any
other pin
Vss-0.3
Vss-0.3
Input voltage on true
open-drain pins (PC0
and PC1)
DD
< 2 V
0.70 x V
DD
with V
Input voltage on true
open-drain pins (PC0
and PC1)
DD
≥ 2 V
with V
Input voltage on fivevolt tolerant (FT) pins
with V
Input voltage on five-
DD
< 2 V
0.70 x V
DD
volt tolerant (FT) pins
DD
≥ 2 V
0.70 x V
DD
with V
Input voltage on any
other pin
Standard I/Os200
(3)
True open drain I/Os200
Typ .
0.3 x V
0.3 x V
0.3 x V
VDD+0.3
Max.Unit
DD
VInput voltage on five-
DD
DD
5.2
5.5
V
5.2
5.5
mV
V
≤ VIN≤ V
SS
Standard I/Os
≤ VIN≤ V
V
I
Input leakage current
lkg
(4)
SS
True open drain I/Os
V
≤ VIN≤ V
SS
PA0 with high sink LED
DD
DD
DD
--50
--200
--200
driver capability
R
C
1. VDD = 3.0 V, TA = -40 to 85 °C unless otherwise specified.
2. Data based on characterization results, not tested in production.
3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4. The max. value may be exceeded if negative current is injected on adjacent pins.
5. Not tested in production.
6. R
Figure 23).
Weak pull-up equivalent resistor
PU
I/O pin capacitance5pF
IO
pull-up equivalent resistor based on a resistive transistor (corresponding I
Figure 23. Typical pull-up current Ipu vs. VDD with VIN=V
Output driving current
Subject to general operating conditions for V
Table 36.Output driving current (high sink ports)
and TA unless otherwise specified.
DD
SS
I/O
SymbolParameterConditionsMin.Max.Unit
Type
= +2 mA,
I
IO
V
= 3.0 V
DD
I
= +2 mA,
(1)
V
OL
Output low level voltage for an I/O pin
Standard
(2)
V
OH
1. The IIO current sunk must always respect the absolute maximum rating specified in Table 13 and the sum
of IIO (I/O ports and control pins) must not exceed I
2. The IIO current sourced must always respect the absolute maximum rating specified in Table 13 and the
sum of IIO (I/O ports and control pins) must not exceed I
Output high level voltage for an I/O pin
.
VSS
VDD
IO
= 1.8 V
V
DD
I
= +10 mA,
IO
= 3.0 V
V
DD
= -2 mA,
I
IO
= 3.0 V
V
DD
I
= -1 mA,
IO
= 1.8 V
V
DD
I
= -10 mA,
IO
= 3.0 V
V
DD
.
V
-0.45
DD
-0.45
V
DD
V
DD
0.45V
0.45V
0.7V
-0.7V
V
V
84/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
0
0.25
0.5
0.75
1
02468101214161820
I
OL
[mA]
V
OL
[V]
-40°C
25°C
85°C
ai18226V2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0123 45678
I
OL
[mA]
V
OL
[V]
-40°C
25°C
85°C
ai18227V2
ai18228V2
0
0.1
0.2
0.3
0.4
0.5
01234567
I
OL
[mA]
V
OL
[V]
-40°C
25°C
85°C
0
0.1
0.2
0.3
0.4
0.5
01234567
I
OL
[mA]
V
OL
[V]
-40°C
25°C
85°C
BJ7
Table 37.Output driving current (true open drain ports)
I/O
SymbolParameterConditionsMin.Max.Unit
Type
= +3 mA,
I
IO
= 3.0 V
V
(1)
V
OL
Output low level voltage for an I/O pin
Open drain
1. The IIO current sunk must always respect the absolute maximum rating specified in Table 13 and the sum
of IIO (I/O ports and control pins) must not exceed I
VSS
.
DD
= +1 mA,
I
IO
V
DD
= 1.8 V
0.45
V
0.45
Table 38.Output driving current (PA0 with high sink LED driver capability)
I/O
SymbolParameterConditionsMin.Max.Unit
Type
= +20 mA,
I
(1)
V
IR
OL
1. The IIO current sunk must always respect the absolute maximum rating specified in Table 13 and the sum
of IIO (I/O ports and control pins) must not exceed I
Output low level voltage for an I/O pin
.
VSS
V
IO
DD
= 2.0 V
0.45V
Figure 24. Typical VOL @ VDD = 3.0 V (high
sink ports)
Figure 26. Typical VOL @ VDD = 3.0 V (true
open drain ports)
Figure 25. Typical VOL @ VDD = 1.8 V (high
sink ports)
Figure 27. Typical VOL @ VDD = 1.8 V (true
open drain ports)
Doc ID 023337 Rev 185/103
Electrical parametersSTM8L052R8
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
0 2 4 6 8 101214161820
I
OH
[mA]
V
DD
- V
OH
[V]
-40°C
25°C
85°C
ai12830V2
0
0.1
0.2
0.3
0.4
0.5
012345 67
I
OH
[mA]
V
DD
- V
OH
[V]
-40°C
25°C
85°C
BJ7
Figure 28. Typical V
DD - VOH
(high sink ports)
@ VDD = 3.0 V
Figure 29. Typical V
(high sink ports)
NRST pin
Subject to general operating conditions for VDD and TA unless otherwise specified.
Table 39.NRST pin characteristics
SymbolParameterConditionsMin.
V
IL(NRST)
V
IH(NRST)
V
OL(NRST)
V
HYST
NRST input low level voltage
NRST input high level voltage
NRST output low level voltage
NRST input hysteresis
(3)
(1)
(1)
(1)
IOL = 2 mA
for 2.7 V ≤ V
V
I
= 1.5 mA
OL
DD
< 2.7 V
for V
DD
≤ 3.6
V
SS
1.4
10%V
(2)
DD - VOH
Typ .
DD
@ VDD = 1.8 V
Max.Unit
0.8
V
DD
0.4
V
mV
R
PU(NRST)
V
F(NRST)
V
NF(NRST)
NRST pull-up equivalent
(1)
resistor
NRST input filtered pulse
NRST input not filtered pulse
1. Data based on characterization results, not tested in production.
2. 200 mV min.
3. Data guaranteed by design, not tested in production.
Figure 30. Typical NRST pull-up resistance RPU vs. VDD
Figure 31. Typical NRST pull-up current I
vs. VDD
pu
The reset network shown in Figure 32 protects the device against parasitic resets. The user
must ensure that the level on the NRST pin can go below the V
max. level specified in
IL
Ta bl e 3 9 . Otherwise the reset is not taken into account internally. For power consumption-
sensitive applications, the capacity of the external reset capacitor can be reduced to limit the
charge/discharge current. If the NRST signal is used to reset the external circuitry, the user
must pay attention to the charge/discharge time of the external capacitor to meet the reset
timing conditions of the external devices. The minimum recommended capacity is 10 nF.
Doc ID 023337 Rev 187/103
Electrical parametersSTM8L052R8
EXTERNAL
RESET
CIRCUIT
STM8L
Filter
R
PU
V
DD
INTERNAL RESET
RSTIN
0.1 µF
Figure 32. Recommended NRST pin configuration
88/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
8.3.8 Communication interfaces
SPI1 - Serial peripheral interface
Unless otherwise specified, the parameters given in Ta b le 4 0 are derived from tests
performed under ambient temperature, f
conditions summarized in Section 8.3.1. Refer to I/O port characteristics for more details on
the input/output alternate function characteristics (NSS, SCK, MOSI, MISO).
Table 40.SPI1 characteristics
SymbolParameterConditions
SYSCLK
frequency and VDD supply voltage
(1)
Min.Max.Unit
f
SCK
1/t
c(SCK)
t
r(SCK)
t
f(SCK)
t
su(NSS)
t
h(NSS)
t
w(SCKH)
t
w(SCKL)
t
su(MI)
t
su(SI)
t
h(MI)
t
h(SI)
t
a(SO)
t
dis(SO)
t
v(SO)
t
v(MO)
t
h(SO)
t
h(MO)
SPI1 clock frequency
Master mode 08
Slave mode08
SPI1 clock rise and fall
time
(2)
NSS setup time Slave mode4 x 1/f
(2)
NSS hold timeSlave mode80-
(2)
SCK high and low time
(2)
(2)
Data input setup time
(2)
(2)
Data input hold time
(2)
(2)(3)
Data output access timeSlave mode-3x 1/f
(2)(4)
Data output disable timeSlave mode30-
(2)
Data output valid timeSlave mode (after enable edge)-60
(2)
Data output valid time
(2)
Data output hold time
(2)
Capacitive load: C = 30 pF-30ns
Master mode,
MASTER
= 8 MHz, f
f
SCK
= 4 MHz
105145
Master mode30-
Slave mode3-
Master mode15-
Slave mode0-
Master mode (after enable
edge)
Slave mode (after enable edge)15-
Master mode (after enable
edge)
MHz
SYSCLK
-
SYSCLK
-20
1-
1. Parameters are given by selecting 10 MHz I/O output frequency.
2. Values based on design simulation and/or characterization results, and not tested in production.
3. Min. time is for the minimum time to drive the output and max. time is for the maximum time to validate the data.
4. Min. time is for the minimum time to invalidate the output and max. time is for the maximum time to put the data in Hi-Z.
Doc ID 023337 Rev 189/103
Electrical parametersSTM8L052R8
ai14134
SCK Input
CPHA=0
MOSI
INPUT
MISO
OUT PUT
CPHA=0
MS B O U T
MSB IN
BI T6 O UT
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
NSS input
t
SU(NSS)
t
c(SCK)
t
h(NSS)
t
a(SO)
t
w(SCKH)
t
w(SCKL)
t
v(SO)
t
h(SO)
t
r(SCK)
t
f(SCK)
t
dis(SO)
t
su(SI)
t
h(SI)
ai14135
SCK Input
CPHA=1
MOSI
INPUT
MISO
OUT PUT
CPHA=1
MS B O U T
MSB IN
BI T6 O UT
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
t
SU(NSS)
t
c(SCK)
t
h(NSS)
t
a(SO)
t
w(SCKH)
t
w(SCKL)
t
v(SO)
t
h(SO)
t
r(SCK)
t
f(SCK)
t
dis(SO)
t
su(SI)
t
h(SI)
NSS input
Figure 33. SPI1 timing diagram - slave mode and CPHA=0
Figure 34. SPI1 timing diagram - slave mode and CPHA=1
1. Measurement points are done at CMOS levels: 0.3V
and 0.7V
DD
DD
.
(1)
90/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
ai14136
SCK Input
CPHA=0
MOSI
OUTUT
MISO
INP UT
CPHA=0
MSBIN
M SB OUT
BIT6 IN
LSB OUT
LSB IN
CPOL=0
CPOL=1
B I T1 OUT
NSS input
t
c(SCK)
t
w(SCKH)
t
w(SCKL)
t
r(SCK)
t
f(SCK)
t
h(MI)
High
SCK Input
CPHA=1
CPHA=1
CPOL=0
CPOL=1
t
su(MI)
t
v(MO)
t
h(MO)
Figure 35. SPI1 timing diagram - master mode
1. Measurement points are done at CMOS levels: 0.3V
and 0.7V
DD
(1)
DD
.
Doc ID 023337 Rev 191/103
Electrical parametersSTM8L052R8
I2C - Inter IC control interface
Subject to general operating conditions for V
The STM8L I
2
C interface (I2C1) meets the requirements of the Standard I2C communication
DD
, f
SYSCLK
, and TA unless otherwise specified.
protocol described in the following table with the restriction mentioned below:
Refer to I/O port characteristics for more details on the input/output alternate function
characteristics (SDA and SCL).
Table 41.I2C characteristics
Max.
(1)
(2)
SymbolParameter
t
w(SCLL)
t
w(SCLH)
t
su(SDA)
t
h(SDA)
t
r(SDA)
t
r(SCL)
t
f(SDA)
t
f(SCL)
t
h(STA)
t
su(STA)
t
su(STO)
t
w(STO:STA)
C
1. f
SYSCLK
Data based on standard I
2.
SCL clock low time4.71.3
SCL clock high time4.00.6
SDA setup time250100
SDA data hold time0 0900
SDA and SCL rise time1000300
SDA and SCL fall time300300
START condition hold time4.00.6
Repeated START condition setup
time
STOP condition setup time4.00.6 μs
STOP to START condition time (bus
free)
Capacitive load for each bus line400400pF
b
must be at least equal to 8 MHz to achieve max fast I2C speed (400 kHz).
2
C protocol requirement, not tested in production.
Standard mode I2CFast mode I2C
Min.
(2)
Max.
(2)
Min.
(2)
4.70.6
4.71.3μs
Unit
μs
ns
μs
Note:For speeds around 200 kHz, the achieved speed can have a ± 5% tolerance.
For other speed ranges, the achieved speed can have a
±
2% tolerance.
The above variations depend on the accuracy of the external components used.
92/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
REPEATED START
START
STOP
START
t
f(SDA)
t
r(SDA)
t
su(SDA)th(SDA)
t
f(SCL)
t
r(SCL)
t
w(SCLL)
t
w(SCLH)
t
h(STA)
t
su(STO)
t
su(STA)tw(STO:STA)
SDA
SCL
4.7kΩ
SDA
STM8L
SCL
V
DD
100Ω
100Ω
V
DD
4.7kΩ
I2CBUS
2
Figure 36.
Typical application with I
C bus and timing diagram
1. Measurement points are done at CMOS levels: 0.3 x VDD and 0.7 x V
1)
DD
Doc ID 023337 Rev 193/103
Electrical parametersSTM8L052R8
8.3.9 LCD controller
In the following table, data are guaranteed by Design, not tested in production.
Table 42.LCD characteristics
SymbolParameterMin.Typ. Max.Unit
V
LCD
V
LCD0
V
LCD1
V
LCD2
V
LCD3
V
LCD4
V
LCD5
V
LCD6
V
LCD7
C
EXT
I
DD
(2)
R
HN
(3)
R
LN
V
33
V
34
V
23
V
12
V
13
V
14
V
0
1. LCD enabled with 3 V internal booster (LCD_CR1 = 0x08), 1/4 duty, 1/3 bias, division ratio= 64, all pixels
active, no LCD connected.
2. RHN is the total high value resistive network.
3. RLN is the total low value resistive network.
High value resistive network (low drive)6.6MΩ
Low value resistive network (high drive)240kΩ
Segment/Common higher level voltageV
Segment/Common 3/4 level voltage3/4V
Segment/Common 2/3 level voltage2/3V
Segment/Common 1/2 level voltage1/2V
Segment/Common lowest level voltage0
LCD external voltage3.6
LCD internal reference voltage 02.6
LCD internal reference voltage 12.7
LCD internal reference voltage 22.8
LCD internal reference voltage 33.0
LCD internal reference voltage 43.1
LCD internal reference voltage 53.2
LCD internal reference voltage 63.4
LCD internal reference voltage 73.5
V
external capacitance0.112µF
LCD
Supply current
Supply current
(1)
at VDD = 1.8 V
(1)
at VDD = 3 V3
Segment/Common 1/3 level voltage1/3V
Segment/Common 1/4 level voltage1/4V
3
LCDx
LCDx
LCDx
LCDx
LCDx
LCDx
V
µA
V
VLCD external capacitor
The application can achieve a stabilized LCD reference voltage by connecting an external
capacitor C
94/103Doc ID 023337 Rev 1
EXT
to the V
LCD
pin. C
is specified in Ta bl e 4 2.
EXT
STM8L052R8Electrical parameters
8.3.10 Embedded reference voltage
In the following table, data are based on characterization results, not tested in production,
unless otherwise specified.
Table 43.Reference voltage characteristics
SymbolParameterConditionsMin.Typ. Max.Unit
I
REFINT
T
S_VREFINT
I
BUF
V
REFINT out
I
LPBUF
(1)(2)
(1)
(1)
Internal reference voltage
consumption
ADC sampling time when reading the
internal reference voltage
Internal reference voltage buffer
consumption (used for ADC)
Reference voltage output
Internal reference voltage low power
buffer consumption (used for
comparators or output)
REFOUT
C
REFOUT
t
VREFINT
t
BUFEN
(1)(4)
(1)
(1)(2)
I
Stability of V
STAB
VREFINT
STAB
VREFINT
1. Guaranteed by design, not tested in production
2. Defined when ADC output reaches its final value ±1/2LSB
3. Tested in production at V
4. To guarantee less than 1%
Stability of V
Stability of V
Buffer output current1µA
Reference voltage output load50pF
Internal reference voltage startup
time
Internal reference voltage buffer
startup time once enabled
over temperature -40 °C ≤ TA ≤ 85 °C2050ppm/°C
REFINT
over temperature0 °C ≤ TA ≤ 50 °C20ppm/°C
REFINT
after 1000 hoursTBDppm
REFINT
= 3 V ±10 mV.
DD
V
REFOUT
deviation
1.202
(3)
1.4µA
510µs
13.525µA
1.242
1.224
(3)
V
7301200nA
23ms
10µs
Doc ID 023337 Rev 195/103
Electrical parametersSTM8L052R8
8.3.11 12-bit ADC1 characteristics
In the following table, data are guaranteed by design, not tested in production.
Table 44.ADC1 characteristics
SymbolParameter ConditionsMin.Typ.Max.Unit
V
DDA
V
REF+
V
REF-
I
VDDA
I
VREF+
V
AIN
T
R
AIN
C
ADC
Analog supply voltage1.83.6V
Reference supply
voltage
Lower reference voltage
Current on the VDDA
input pin
2.4 V ≤ V
1.8 V≤ V
≤ 3.6 V
DDA
≤ 2.4 VV
DDA
2.4
V
DDA
DDA
V
SSA
10001450µA
700
Current on the VREF+
input pin
400
(peak)
450
(average)
Conversion voltage
range
Temperature range-4085°C
A
(2)
0
V
REF+
on PF0/1/2/3 fast
External resistance on
V
AIN
channels
on all other channels
50
on PF0/1/2/3 fast
Internal sample and
hold capacitor
channels
16pF
on all other channels
(3)
(1)
(1)
V
V
V
µA
µA
kΩ
≤ 3.6 V
DDA
≤ 2.4 V
DDA
channels
on all other
0.32016MHz
0.3208MHz
f
ADC
f
CONV
ADC sampling clock
frequency
12-bit conversion rate
2.4 V≤ V
without zooming
1.8 V≤ V
with zooming
V
on PF0/1/2/3 fast
AIN
V
AIN
channels
f
TRIG
t
LAT
External trigger
frequency
External trigger latency3.51/f
96/103Doc ID 023337 Rev 1
1
760
(3)(4)
(3)(4)
t
conv
MHz
kHz
1/f
ADC
SYSCLK
STM8L052R8Electrical parameters
Table 44.ADC1 characteristics (continued)
SymbolParameter ConditionsMin.Typ.Max.Unit
V
PF0/1/2/3 fast
t
S
t
conv
t
WKUP
t
IDLE
t
VREFINT
Sampling time
12-bit conversion time
Wakeup time from OFF
state
Time before a new
(5)
conversion
Internal reference
voltage startup time
AIN
channels
< 2.4 V
V
DDA
PF0/1/2/3 fast
V
AIN
channels
DDA
≤ 3.6 V
DDA
< 2.4 V
≤ 3.6 V
DDA
2.4 V ≤ V
on slow channels
V
AIN
V
V
on slow channels
AIN
2.4 V ≤ V
16 MHz1
0.43
0.22
0.86
0.41
(3)(4)
(3)(4)
(3)(4)
(3)(4)
12 + t
(3)
S
µs
µs
µs
µs
1/f
ADC
µs
3µs
∞s
refer to
Ta bl e 4 3
ms
1. The current consumption through V
- one constant (max 300 µA)
- one variable (max 400 µA), only during sampling time + 2 first conversion pulses.
So, peak consumption is 300+400 = 700 µA and average consumption is 300 + [(4 sampling + 2) /16] x 400 = 450 µA at
1Msps
2. V
3. Minimum sampling and conversion time is reached for maximum R
4. Value obtained for continuous conversion on fast channel.
5. The time between 2 conversions, or between ADC ON and the first conversion must be lower than t
must be tied to ground.
REF-
is composed of two parameters:
REF
= 0.5 kΩ..
AIN
IDLE.
Doc ID 023337 Rev 197/103
Electrical parametersSTM8L052R8
In the following three tables, data are guaranteed by characterization result, not tested in
production.
Table 45.ADC1 accuracy with V
SymbolParameterConditionsTyp.Max.Unit
DNLDifferential non linearity
INLIntegral non linearity
TUETotal unadjusted error
OffsetOffset error
GainGain error
= 3.3 V to 2.5 V
DDA
= 16 MHz11.6
f
ADC
f
= 8 MHz11.6
ADC
= 4 MHz11.5
f
ADC
= 16 MHz1.22
f
ADC
f
= 8 MHz1.21.8
ADC
= 4 MHz1.21.7
f
ADC
= 16 MHz2.23.0
f
ADC
f
= 8 MHz1.82.5
ADC
= 4 MHz1.82.3
f
ADC
f
= 16 MHz1.52
ADC
= 8 MHz11.5
f
ADC
= 4 MHz0.71.2
f
ADC
f
= 16 MHz
ADC
= 8 MHz
ADC
= 4 MHz
f
ADC
LSB
LSB
11.5f
Table 46.ADC1 accuracy with V
SymbolParameterTyp.Max.Unit
DNLDifferential non linearity12LSB
INLIntegral non linearity1.73LSB
TUETotal unadjusted error24LSB
OffsetOffset error12LSB
GainGain error1.53LSB
Table 47.ADC1 accuracy with V
SymbolParameterTyp.Max.Unit
DNLDifferential non linearity12LSB
INLIntegral non linearity23LSB
TUETotal unadjusted error35LSB
OffsetOffset error23LSB
GainGain error23LSB
= 2.4 V to 3.6 V
DDA
= V
DDA
REF+
= 1.8 V to 2.4 V
98/103Doc ID 023337 Rev 1
STM8L052R8Electrical parameters
E
O
E
G
1LSB
IDEAL
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
T
=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
E
O
=Offset Error: deviation between the first actual
transition and the first ideal one.
E
G
=Gain Error: deviation between the last ideal
transition and the last actual one.
E
D
=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
E
L
=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
4095
4094
4093
5
4
3
2
1
0
7
6
1234567
4093 4094 4095 4096
(1)
(2)
E
T
E
D
E
L
(3)
V
DDA
V
SSA
ai14395b
V
REF+
4096
(or depending on package)]
V
DDA
4096
[1LSB
IDEAL =
ai17090e
STM8L05xxx
V
DD
AINx
IL±50 nA
0.6 V
V
T
R
AIN
(1)
C
parasitic
V
AIN
0.6 V
V
T
R
ADC
C
ADC
(1)
12-bit
converter
Sample and hold ADC
converter
Figure 37.ADC1 accuracy characteristics
Figure 38. Typical connection diagram using the ADC
1. Refer to Ta b le 4 4 for the values of R
2. C
represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
parasitic
pad capacitance (roughly 7 pF). A high C
this, f
should be reduced.
ADC
AIN
and C
parasitic
.
ADC
value will downgrade conversion accuracy. To remedy
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 39 or Figure 40,
depending on whether V
is connected to V
REF+
or not. Good quality ceramic 10 nF
DDA
capacitors should be used. They should be placed as close as possible to the chip.
Doc ID 023337 Rev 199/103
Electrical parametersSTM8L052R8
V
REF+
S
STM8L
V
DDA
V
SSA/VREF-
1 μF // 10 nF
F
1 μF // 10 nF
Supply
External
reference
ai17031b
V
REF+/VDDA
STM8L
1 μF // 10 nF
V
REF–/VSSA
ai17032b
Supply
Figure 39. Power supply and reference decoupling (V
// 10 n
Figure 40. Power supply and reference decoupling (V
not connected to V
REF+
TM8L
connected to V
REF+
DDA
DDA
)
)
100/103Doc ID 023337 Rev 1
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