ST STGY40NC60VD User Manual

STGY40NC60VD

N-CHANNEL 50A - 600V - Max247

Very Fast PowerMESH™ IGBT

Table 1: Ge neral Features

TYPE V

STGY40NC60VD 600 V < 2.5 V 50 A

■ HIGH CURRENT CAPABILITY

■ HIGH FREQUENCY OPERATION UP TO

CESVCE(sat)

(Max)

@25°C

I

C

@100°C

50 KHz

■ LOSSES INCLUDE DIODE RECOVERY

ENERGY

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOWER C

■ VERY SOFT ULTRA FAST RECOVERY

RES

/ C

IES

RATIO

ANTIPARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH

TIGHTER PARAMETER DISTRUBUTION

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH

™

IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency.

Figure 1: Package

3

2

1

Max247

Weight: 4.96gr ± 0.01 Max Clip Pressure: 150 N/mm

Figure 2: Internal Schematic Diagram

2

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS and PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

■ UPS

■ MOTOR DRIVERS

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STGY40NC60VD GY40NC60VD Max247 TUBE

Rev.8

1/11July 2004

STGY40NC60VD

Table 3: Absolute Maximum ratings

Symbol Parameter Value Symbol

V

CES

V

ECR

V

GE

I

C

I

C

I

(1)

CM

I

F

P

TOT

T

stg

T

j

(1)Pulse width limited by max. junction temperature.

Collector-Emitter Voltage (VGS = 0)

600 Reverse Battery Protection 20 Gate-Emitter Voltage ± 20 Collector Current (continuous) at 25°C (#) 80 Collector Current (continuous) at 100°C (#) 50 Collector Current (pulsed) 200 A Diode RMS Forward Current at TC =25°C Total Dissipation at TC = 25°C

30 A

260 Derating Factor 2.08 W/°C Storage Temperature Operating Junction Temperature

– 55 to 150 °C

V V V A A

W

Table 4: Thermal Data

Min. Typ. Max. Unit

Rthj-case Thermal Resistance Junction-case (IGBT) -- -- 0.48 °C/W Rthj-case Thermal Resistance Junction-case (Diode) -- -- 1.5 °C/W Rthj-amb Thermal Resistance Junction-ambient -- -- 50 °C/W

T

L

Maximum Lead Temperature for Soldering Purpose

300 °C

(1.6 mm from case, for 10 sec.)

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 5: Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collectro-Emitter Breakdown

IC = 1 mA, VGE = 0 600 V

Voltage

I

CES

I

GES

Collector-Em itter Leak age Current (V

CE

= 0)

Gate-Emitter Leakage Current (V

CE

= 0)

V

= Max Rating

GE

Tc=25°C Tc=125°C

V

= ± 20 V , VCE = 0 ± 100 nA

GE

10

1

Table 6: On

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(SAT)

(#) Calculated according to the iterative formula:

Gate Threshold Voltage VCE= VGE, IC= 250 µA 3.75 5.75 V Collector-Em itter Satur ation

Voltage

VGE= 15 V, IC= 40A, Tj= 25°C VGE= 15 V, IC= 40A,

1.9

1.7

2.5 V

Tj= 125°C

µA

mA

V

ICTC()

2/11

T

–

--------------------------------------------------------------------------------------------------

=

R

THJ C–

JMAXTC

V

CESAT MAX()TCIC

,()×

STGY40NC60VD

ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1)

g

fs

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

I

CL

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

Total Gate Charge Gate-Emitter Charge Gate-Collector Charge

Turn-Off SOA Minimum Current

Table 8: Switching On

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

(di/dt)

Eon (2)

t

d(on)

t

r

(di/dt)

Eon (2)

2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is us ed as extern al diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)

Turn-on Delay Time Current Rise Time Turn-on Current Slope

on

Turn-on Switching Losses Turn-on Delay Time

Current Rise Time Turn-on Current Slope

on

Turn-on Switching Losses

Table 9: Switching Off

Symbol Paramet er Test Conditions Min. Typ. Max. Unit

)

t

r(Voff

t

d(off

t

f

(3)

E

off

E

ts

t

r(Voff

t

d(off

t

f

E

(3)

off

E

ts

(3)Turn-off losses include al so the tail of the collector current.

Off Voltage Rise Time

)

Turn-off Delay Time 140 ns Current Fall Time 45 ns Turn-off Switching Loss 720 970 Total Switching Loss 1050 1420

)

Off Voltage Rise Time

)

Turn-off Delay Time 170 ns Current Fall Time 77 ns

Turn-off Switching Loss 1400 Total Switching Loss 2040

VCE = 15 V, IC= 20 A 20 S

= 25V, f = 1 MHz, VGE = 0 4550

V

CE

VCE = 390 V, IC = 40 A, VGE = 15V, (see Figure 21)

V

= 480 V , Tj = 150°C

clamp

200 A

350 105

214

30 96

pF pF pF

nC nC nC

RG = 100 Ω, VGE= 15V

= 390 V, IC = 40 A

V

CC

RG=3.3Ω, VGE= 15V, Tj= 25°C (see Figure 19)

= 390 V, IC = 40 A

V

CC

RG=3.3Ω, VGE= 15V, Tj= 125°C (see Figure 19)

Vcc = 390 V, IC = 40 A,

43 17

2060

330

450

42 19

1900

640

25 ns

ns ns

A/µs

µJ ns

ns

A/µs

µJ

RGE = 3.3 Ω , VGE = 15 V TJ = 25 °C (see Figure 19)

µJ µJ

Vcc = 390 V, IC = 40 A,

= 3.3 Ω , VGE = 15 V

R

GE

Tj = 125 °C (see Figure 19)

60 ns

µJ µJ

3/11

STGY40NC60VD

Table 10: Collector-Emitter Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Q I

V

t

rrm

S

t

rrm

S

f

Forward On-Voltage If = 20 A

If = 20 A, Tj = 125 °C

rr a

rr

Reverse Recovery Time Reverse Recovery Charge

Reverse Recovery Current

= 20 A ,VR = 40 V,

I

f

Tj = 25°C, di/dt = 100 A/µs (see Figure 22)

Softness factor of the diode

rr a

rr

Reverse Recovery Time Reverse Recovery Charge

Reverse Recovery Current

= 20 A ,VR = 40 V,

I

f

Tj =125°C, di/dt = 100 A/µs (see Figure 22)

Softness factor of the diode

1.5 1

44 32 66

3

0.375 88

56

237

5.4

0.57

2.2

V V

ns ns nC

A

ns ns nC

A

4/11