ST STGW50NB60M User Manual

STGW50NB60M

STGW50NB60M

N-CHANNEL 50A - 600V - TO-247

PowerMESH™ IGBT

TYPE	VCES	VCE(sat)(25°C)	IC
STGW50NB60M	600 V	< 1.9 V	50 A

■HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

■LOW ON-VOLTAGE DROP (VCESAT)

■LOW GATE CHARGE

■HIGH CURRENT CAPABILITY

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "M" identifies a family optimized to achieve very low saturation on voltage for frequency applications <10 KHz.

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TO-247

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■MOTOR CONTROL

■WELDING EQUIPMENTS

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600	V
VECR	Reverse Battery Protection	20	V
VGE	Gate-Emitter Voltage	±20	V
IC	Collector Current (continuous) at TC = 25°C	100	A
IC	Collector Current (continuous) at TC = 100°C	50	A
ICM ( )	Collector Current (pulsed)	400	A
PTOT	Total Dissipation at TC = 25°C	250	W
	Derating Factor	2	W/°C
Tstg	Storage Temperature	–65 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

(●) Pulse width limited by safe operating area

May 2003

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THERMAL DATA

Rthj-case	Thermal Resistance Junction-case Max	0.5	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	30	°C/W
Rthc-h	Thermal Resistance Case-heatsink Typ	0.1	°C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VBR(CES)	Collector-Emitter Breakdown	IC = 250 µA, VGE = 0	600			V
	Voltage
ICES	Collector cut-off	VCE = Max Rating, TC = 25 °C			10	µA
	(VGE = 0)	VCE = Max Rating, TC = 125 °C			100	µA
IGES	Gate-Emitter Leakage	VGE = ± 20 V , VCE = 0			± 100	nA
	Current (VCE = 0)

ON (1)

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
VGE(th)	Gate Threshold Voltage	VCE = VGE, IC = 250 µA		3	4	5	V
VCE(sat)	Collector-Emitter Saturation	VGE = 15V, IC = 30	A @25°C		1.3		V
	Voltage	VGE = 15V, IC = 30	A @100°C		1.2		V
		VGE = 15V, IC = 50	A @25°C		1.5	1.9	V
		VGE = 15V, IC = 50 A @100°C			1.35		V

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs	Forward Transconductance	VCE = 15 V , IC = 18 A		22		S
Cies	Input Capacitance			4500		pF
Coes	Output Capacitance	VCE = 25 V, f = 1 MHz, VGE = 0		400		pF
Cres	Reverse Transfer			70		pF
	Capacitance
Qg	Total Gate Charge	VCE = 480 V, IC = 50 A,		231		nC
Qge	Gate-Emitter Charge	VGE = 15 V		28		nC
Qgc	Gate-Collector Charge			97		nC
ICL	Latching Current	Vclamp = 480 V , Tj = 125°C	300			A
		RG = 10 Ω

SWITCHING ON

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VCC = 480 V, IC = 50 A		45		ns
tr	Rise Time	RG = 10Ω , VGE = 15 V		30		ns
(di/dt)on	Turn-on Current Slope	VCC= 480 V, IC = 50 A		1600		A/µs
Eon	Turn-on Switching Losses	RG=10 Ω , VGE = 15 V		800		µJ
		Tj = 125°C

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ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tc	Cross-over Time	Vcc = 480 V, IC = 50 A		450		ns
tr(Voff)	Off Voltage Rise Time	RGE = 10 Ω , VGE = 15 V		130		ns
td(off)	Delay Time			410		ns
tf	Fall Time			300		ns
Eoff(**)	Turn-off Switching Loss			4		mJ
Ets	Total Switching Loss			4.1		mJ
tc	Cross-over Time	Vcc = 480 V, IC = 50 A		730		ns
tr(Voff)	Off Voltage Rise Time	RGE = 10 Ω , VGE = 15 V		265		ns
td(off)	Delay Time	Tj = 125 °C		565		ns
tf	Fall Time			440		ns
Eoff(**)	Turn-off Switching Loss			6.6		mJ
Ets	Total Switching Loss					mJ
				7.1

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)

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