ST STGW50NB60H User Manual

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N-CHANNEL 50A - 600V TO-247

TYPE V

CES

STGW50NB60H 600 V < 2.8 V 50 A

■

HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)

■

LOW ON-VOLTAGE DROP (V

■

LOW GATE CHARGE

■

HIGH CURRENT CAPABILITY

■

VERY HIGH FREQUENCY OPERATION

■

OFF LOSSES INCLUDE TAIL CURRENT

DESCRIPTION

Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).

APPLICATIONS

■

HIGH FREQUENCY MOTOR CONTROLS

■

WELDING EQUIPMENTS

■

SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES

V

CE(sat)

CESAT

I

C

)

STGW50NB60H

PowerMESH IGBT

PRELIMINARY DATA

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V
V

V

I

CM

P

T

(•) Pulse width limited by safe operating area

June 1999

Collector-Emitter Voltage (VGS = 0) 600 V

CES

Emitter-Collector Voltage 20 V

ECR

Gate-Emitter Voltage ± 20 V

GE

I

Collector Current (continuous) at Tc = 25 oC100A

C

I

Collector Current (continuous) at Tc = 100 oC50A

C

(•) Collector Current (pulsed) 400 A

Total Dissipation at Tc = 25 oC250W

tot

Derating Factor 2 W/
Storage Temperature -65 to 150

stg

T

Max. Operating Junction Temperature 150

j

o

C

o

C

o

C

1/5

STGW50NB60H

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-h

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ

0.5
30

0.1

o

C/W

oC/W

o

C/W

ELECTRICAL CHARACTERISTICS

= 25 oC unless otherwise specified)

(T

j

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter

IC = 250 µA V

= 0 600 V

GE

Breakdown Voltage

I

I

CES

GES

Collector cut-off
(V

= 0)

GE

Gate-Emitter Leakage
Current (V

CE

= 0)

= Max Rating Tj = 25 oC

V

CE

V

= Max Rating Tj = 125 oC

CE

= ± 20 V VCE = 0 ± 100 nA

V

GE

10

100

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

Gate Threshold

V

= VGE IC = 250 µA35V

CE

Voltage

V

CE(SAT)

Collector-Emitter
Saturation Voltage

VGE = 15 V IC = 50 A
V

= 15 V IC = 50 A Tj = 125 oC

GE

2.3

1.9

2.8 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

C

C

C

Q
Q
Q

I

CL

Forward

fs

Transconductance
Input Capacitance

ies

Output Capacitance

oes

Reverse Transfer

res

Capacitance
Total Gate Charge

G

Gate-Emitter Charge

GE

Gate-Collector Charge

GC

Latching Current V

VCE =25 V IC = 50 A 22 S

V

= 25 V f = 1 MHz V

CE

= 0 4500

GE

450

90

VCE = 480 V IC = 50 A VGE = 15 V 260

28

115

= 480 V RG=10 Ω

clamp

V

= 15 V Tj = 150 oC

GE

200 A

µA
µA

V

pF
pF
pF

nC
nC
nC

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

30
90

350
600

2/5

t

d(on)

t

r

(di/dt)

E

on

Delay Time
Rise Time

Turn-on Current Slope

on

Turn-on
Switching Losses

VCC = 480 V IC = 50 A
V

= 15 V RG = 10Ω

GE

V

= 480 V IC = 50 A

CC

R

= 10 Ω VGE = 15 V

G

T

= 125 oC

j

ns
ns

A/µs

µJ