ST STGW39NC60VD User Manual
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Features
V
Type V
STGW39NC60VD 600V <2.5V 40A
CES
CE(sat)
(Max)@ 25°C
STGW39NC60VD
N-channel 40A - 600V - TO-247
Very fast switching PowerMESH™ IGBT
I
C
@100°C
■ Low C
RES
/ C
ratio (no cross conduction
IES
susceptibility)
■ High frequency operation
■ Very soft ultra fast recovery anti parallel diode
Applications
■ High frequency inverters
■ UPS
■ Motor drivers
Induction heating
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
performances. The suffix “V” identifies a family
optimized for high frequency.
™
IGBTs, with outstanding
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
STGW39NC60VD GW39NC60VD TO-247 Tube
August 2007 Rev 6 1/14
www.st.com
14
Contents STGW39NC60VD
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STGW39NC60VD Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
(1)
I
C
(1)
I
C
I
CL
V
GE
I
F
P
TOT
T
1. Calculated according to the iterative formula:
ICTC()
2. Vclamp = 480V , Tj = 150°C, RG = 10Ω, VGE= 15V
Collector-emitter voltage (VGS = 0)
600 V
Collector current (continuous) at 25°C 70 A
Collector current (continuous) at 100°C 40 A
(2)
Turn-off SOA minimum current 220 A
Gate-emitter voltage ± 20 V
Diode RMS forward current at Tc=25°C 30 A
Total dissipation at TC = 25°C
Operating junction temperature – 55 to 150 °C
j
T
–
---------------------------------- --------------------------------------------- -----------------------=
R
THJ C–VCESAT MAX()TCIC
JMAXTC
,()×
250 W
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
thj-case
R
thj-case
R
thj-amb
Thermal resistance junction-case max (IGBT) 0.5 °C/W
Thermal resistance junction-case max (diode) 1.5 °C/W
Thermal resistance junction-ambient max 50 °C/W
3/14
Electrical characteristics STGW39NC60VD
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
BR(CES)
V
CE(SAT)
V
GE(th)
I
CES
I
GES
g
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-emitter leakage
current (VGE = 0)
Gate-emitter leakage
current (V
Forward transconductance
fs
CE
= 0)
= 1mA, VGE = 0
I
C
VGE=15V, IC=30A,Tj=25°C
V
=15V, IC=30A,Tj=125°C
GE
= VGE, IC= 250µA
V
CE
V
= Max rating,Tc=25°C
CE
= Max rating, Tc=125°C
V
CE
VGE = ± 20V , VCE = 0
VCE = 15V, IC= 30A
600 V
1.8
2.5 V
1.7
3.75 5.75 V
5005µA
±100 nA
20 S
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max Unit
C
C
C
Input capacitance
ies
Output capacitance
oes
Reverse transfer
res
capacitance
VCE = 25V, f = 1 MHz, VGE= 0
2900
298
59
V
mA
pF
pF
pF
Q
g
Total gate charge
Q
Q
Gate-emitter charge
ge
Gate-collector charge
gc
VCE = 390V, IC = 30A,
V
(see Figure 19)
4/14
= 15V,
GE
126
16
46
nC
nC
nC
STGW39NC60VD Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
t
d(on)
t
(di/dt)
t
r(Voff)
t
d(off)
t
t
r(Voff)
t
d(off)
t
Turn-on delay time
Current rise time
r
Turn-on current slope
onf
Turn-on delay time
Current rise time
r
Turn-on current slope
on
Off voltage rise time
Turn-off delay time
Current fall time
f
Off voltage rise time
Turn-off delay time
Current fall time
f
=390 V, IC= 30A,
V
CC
=10Ω, VGE=15V
R
G
Tj=25°C (see Figure 18)
=390 V, IC= 30A,
V
CC
=10Ω, VGE=15V
R
G
Tj=125°C (see Figure 18)
=390 V, IC= 30A,
V
CC
=10Ω, VGE=15V
R
G
Tj=25°C (see Figure 18)
=390 V, IC= 30A,
V
CC
R
=10Ω, VGE=15V
G
Tj=125°C (see Figure 18)
33
13
2500
32
14
2280
33
178
65
68
238
128
Table 7. Switching energy (inductive load)
Symbol Parameter Test conditions Min Typ. Max Unit
(1)
E
on
E
off
E
E
on
E
off
E
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Turn-on switching losses
(2)
Turn-off switching losses
Total switching losses
ts
(1)
Turn-on switching losses
(2)
Turn-off switching losses
Total switching losses
ts
VCC = 390V, IC = 30A
=10Ω, VGE= 15V,
R
G
Tj= 25°C (see Figure 20)
VCC = 390V, IC = 30A
RG=10Ω, VGE= 15V,
Tj= 125°C (see Figure 20)
333
537
870
618
1125
1743
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
Table 8. Collector-emitter diode
Symbol Parameter Test conditions Min Typ. Max Unit
Q
I
Q
I
V
t
rrm
t
rrm
Forward on-voltage
f
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
If = 15A
If = 15A, Tj = 125°C
If = 30A, Tj = 125°C
If = 30A, V
= 25°C, di/dt =100A/µs
T
j
= 50V,
R
(see Figure 21)
If = 30A, V
= 125°C,di/dt =100A/µs
T
j
= 50V,
R
(see Figure 21)
1.3
1.1
1.2
45
56
2.55
100
290
5.8
2.9 V
V
V
ns
nC
A
ns
nC
A
5/14
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