ST STGW30NC60W User Manual
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STGW30NC60W
N-CHANNEL 30A - 600V - TO-247
Ultra FAST Switching PowerMESH™ IGBT
Target Specification
General features
V
Type
STGW30NC60W 600 V < 2.5 V 30 A
■ VERY LOW OFF LOSSES INCLUDING TAIL
V
CES
CE(sat)
(Max )@ 25°C
CURRENT
■ LOWER C
■ LOSSES INCLUDE DIODE RECOVERY
RES
/ C
IES
RATIO
ENERGY
■ HIGH FREQUENCY OPERATION
■ VERY SOFT ULTRA FAST RECO VERY ANTI
PARALLEL DIODE
I
C
@100°C
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
performances. The suffix “W” identifies a family
optimized for very high frequency application.
™
IGBTs, with outstanding
Package
2
TO-247
Internal schematic diagram
Applications
■ HIGH FREQUENCY INVERTERS, UPS,
MOTOR DRIVERS
■ HF, SMPS and PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
Order codes
Sales Type Marking Package Packaging
STGW30NC60W W30NC60W TO-247 TUBE
Rev 1
September 2005 1/9
www.st.com
9This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice
1 Electrical ratings STGW30NC60W
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
I
C
I
C
V
ECR
V
GE
ICM Note 1
P
TOT
Collector-Emitter Voltage (VGS = 0)
600 V
Collector Current (cont inuous) at 25°C (#) 60 A
Collector Current (continuous) at 100°C (#) 30 A
Reverse Battery Protect ion 20 V
Gate-Emitter Voltage ± 20 V
Collector Current (pulsed) 100 A
Total Dissipat ion at TC = 25°C
200 W
Derating Factor 1.6 W/°C
T
stg
T
Table 2. Thermal Data
Storage Tem perature
Operating Junction Tem perature
j
– 55 to 150 °C
Min. Typ. Max. Unit
Rthj-case Thermal Resist ance Junction-case 0.625 °C/W
Rthj-amb Thermal Resist ance Junction-ambient 62.5 ° C/W
T
L
Maximum Lead Tempe ratur e for Solder ing Pu rpo se
(1.6 mm from case, for 10 sec.)
300
°C
2/9
STGW30NC60W 2 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 3. Static
Symbol Parameter T est Conditions Min. Typ. Max. Unit
V
BR(CES)
V
CE(SAT)
Collectro-Emitter Breakdown
Voltage
Colle ct o r-Emitte r S at u ra ti o n
Voltage
I
= 1 mA, VGE = 0
C
V
= 15 V, IC= 20A, Tj= 25°C
GE
V
= 15 V, IC= 20A,
GE
600 V
1.9
1.8
2.5
Tj= 125°C
= VGE, IC= 250 µA
V
g
fs
GE(th)
I
CES
I
GES
Note 1
Gate Threshold Voltage
Collector-Emitter Leakage
Current (V
CE
= 0)
Gate-Emitter Leak age
Current (V
CE
= 0)
Forward Transconductance
V
CE
V
= Max Rating,Tc=25°C
GE
V
= Max Rating, Tc=125°C
GE
= ± 20 V , VCE = 0
V
GE
VCE = 15 V, IC= 20 A
3.75 5.75 V
10
1
± 10 0 nA
15 S
Table 4. Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
C
ies
C
oes
C
res
Input Capacitan ce
Output Capacitance
Reverse Transfer Capacitance
= 25V, f = 1 MHz, VGE =
V
CE
0
2200
225
50
V
V
µA
mA
pF
pF
pF
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collecto r Char ge
Turn-Off SOA Minimum
Current
= 390 V, IC = 20 A,
V
CE
V
= 15V,
GE
(see Figure 2)
V
= 480 V , Tj = 150°C
clamp
R
= 10 Ω, VGE= 15V
G
100
16
45
140 nC
nC
nC
100 A
3/9
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