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查询STGW30NB60H供应商
N-CHANNEL 30A - 600V TO-247
TYPE V
CES
ST G W30NB60H 600 V < 2 . 8 V 30 A
■ HIGHINPUT IMPEDANCE
(VOLTAGEDRIVEN)
■ LOW ON-VOLTAGEDROP (V
■ LOW GATECHARGE
■ HIGHCURRENTCAPABILITY
■ VERYHIGH FREQUENCYOPERATION
■ OFFLOSSES INCLUDETAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
APPLICATIONS
■ HIGHFREQUENCY MOTOR CONTROLS
■ WELDINGEQUIPMENTS
■ SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
V
CE(sat)
CESAT
I
C
)
STGW30NB60H
PowerMESH IGBT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
CM
P
T
(•) Pulse width limited by safe operating area
June 1999
Collect o r -Em i t t er Voltage (VGS= 0) 600 V
CES
Emit t er-Collect or Voltage 20 V
ECR
Gate-Emitter V oltage
GE
I
Collect o r Curr ent (continuous) at Tc=25oC60A
C
I
Collect o r Curr ent (continuous) at Tc= 100oC30A
C
20 V
±
(•) Collect o r Curr ent (pulsed) 240 A
Tot al Dissipat ion at Tc=25oC 190 W
tot
Derat ing Factor 1.52 W/
Sto rage Tem perature - 65 to 150
stg
T
Max. Operat ing Junc tion Tem per ature 150
j
o
C
o
C
o
C
1/8
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STGW30NB60H
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-h
Ther mal Resistanc e Junction-case Max
Ther mal Resistanc e Junction-ambient Max
Ther mal Resistanc e C as e - heatsink Typ
0.66
30
0.1
o
C/W
oC/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
Sym bol Param e t er Test Conditions Min . Typ. Max. Unit
V
BR(CES)
Collector-Emitter
IC=250µAVGE= 0 600 V
Break dow n Volt age
I
I
ON (∗
CES
GES
Collect o r cut - off
=0)
(V
GE
Gat e- Em i t t er Leakage
Current (V
)
CE
=0)
V
=MaxRating Tj=25oC
CE
=MaxRating Tj=125oC
V
CE
V
= ± 20 V VCE=0 ±100 nA
GE
10
100
Sym bol Param e t er Test Conditions Min . Typ. Max. Unit
V
GE(th)
Gate Th reshold
VCE=VGEIC= 250 µ A35V
Voltage
V
CE(SAT)
Collector-Emitter
Sat urat ion Volt age
VGE=15V IC=30A
V
=15V IC=30A Tj= 125oC
GE
2.2
1.8
2.8 V
DYNAMIC
Sym bol Param e t er Test Conditions Min . Typ. Max. Unit
C
C
C
Q
Q
g
Q
I
CL
Forward
fs
Tr ansc on duc tance
Input Capacitanc e
ies
Out put Capacitance
oes
Reverse Transfer
res
Capacit a nc e
Tot al Gate Charge
G
Gate-Emitt er C harge
GE
Gat e- Col lect or C har ge
GC
Latc hing Curr ent V
VCE=25 V IC=30A 20 S
VCE=25V f=1MHz VGE= 0 2300
250
60
VCE= 480 V IC=30A VGE= 15 V 150
15
72
=480V RG=10 Ω
clamp
T
= 150oC
j
120 A
µA
µ
V
pF
pF
pF
nC
nC
nC
A
SWITCHINGON
Sym bol Param e t er Test Conditions Min . Typ. Max. Unit
(di/dt)
2/8
t
d(on)
E
Delay Time
t
Rise Time
r
Tur n-on Current Slope
on
Turn-on
on
Switching Losses
VCC= 480 V IC=30A
=15V RG=10Ω
V
GE
VCC=480V IC=30A
=10Ω VGE=15V
R
G
T
=125oC
j
15
75
760
850
ns
ns
A/µs
J
µ
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STGW30NB60H
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGOFF
Sym bol Param e t er Test Conditions Min . Typ. Max. Unit
t
tr(v
t
d(off
E
off
E
t
tr(v
t
d(off
E
off
E
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(**)Losses Include Also The Tail (Jedec Standardization)
Cross-Over Time
c
Off Voltage Rise Time
)
off
)
Delay Time
t
Fall T ime
f
(**)
Turn-off Switching Loss
Tot al Switching Loss
ts
Cross-Over Time
c
)
Off Voltage Rise Time
off
)
Delay Time
t
Fall T ime
f
(**)
Turn-off Switching Loss
Tot al Switching Loss
ts
VCC=480V IC=30A
R
GE
=10
Ω
VGE=15V
VCC = 480 V IC=30A
R
GE
= 125oC
T
j
=10
Ω
VGE=15V
150
40
210
90
1.10
1.8
250
70
250
160
1.6
2.45
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
ThermalImpedance
3/8