ST STGP7NB60F, STGD7NB60F User Manual
查询STGD7NB60F供应商
STGP7NB60F - STGD7NB60F
N-CHANNEL 7A - 600V - TO-220 / DPAK
PowerMESH™ IGBT
PRELIMINARY DATA
TYPE
STGP7NB60F
STGD7NB60F
■ HIGH INPUT IMPEDANCE
■ LOW ON-VOLTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ HIGH FREQUENCY OPERATION
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
V
CES
600 V
600 V
V
CE(sat) (Max)
@25°C
< 2.4 V
< 2.4 V
cesat
)
I
C
@100°C
7A
7A
REEL (DPAK)
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "F" identifies a family optimized to
achieve very low switching switching t im es for f requency application s (<40KHZ)
3
TO-220
3
2
1
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ MOTOR CONTROLS
■ SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TO-220 DPAK
V
CES
V
GE
I
C
I
C
I
CM
P
TOT
T
stg
T
j
() PULSE WIDTH LIMITED BY SAFE OPERATING AREA
June 2003
This is preliminary information on anew product nowin development or undergoing evaluation. Details are subject to change without notice.
Collector-Emitter Voltage (VGS=0)
600 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C
()
Collector Current (pulsed) 56 A
Total Dissipation at TC= 25°C
80 70 W
14 A
7A
Derating Factor 0.64 0.56 W/°C
Storage Temperature – 55 to 150 °C
Max. Operating Junction Temperature 150 °C
1/8
STGP7NB60F - STGD7NB60F
THERMAL DATA
TO-220 DPAK
Rthj-case Thermal Resistance Junction-case Max 1.56 1.78 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
IC= 250 µA, VGE= 0 600 V
V
= Max Rating, TC=25°C
CE
VCE= Max Rating, TC= 125 °C
V
=±20V,VCE= 0 ±100 nA
GE
V
CE=VGE,IC
VGE=15V,IC=7A
VGE=15V,IC= 7 A, Tj =125°C
= 250µA
35V
2 2.4 V
1.5 V
10 µA
100 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance 80 pF
Reverse Transfer
=25V,f=1MHz,VGE=0
CE
540 pF
13 pF
Capacitance
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current V
= 480V, IC=7A,
V
CE
=15V
V
GE
= 480 V
clamp
Tj = 125°C , R
=10Ω
G
37
50
4
18
28 A
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
=480V,IC=7A
t
d(on)
t
(di/dt)
Eon
Turn-on Delay Time
r
Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
V
CC
R
=10Ω,VGE=15V
G
V
= 480 V, IC=7ARG=10Ω
CC
= 15 V,Tj =125°C
V
GE
17
6
900
60
nC
nC
nC
ns
ns
A/µs
µJ
2/8
STGP7NB60F - STGD7NB60F
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
E
ts
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
E
ts
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Cross-over Time
)
Off Voltage Rise Time 45 ns
)
Delay Time 110 ns
Fall Time 140 ns
Turn-off Switching Loss 240
Total Switching Loss 290
Cross-over Time
)
Off Voltage Rise Time 135 ns
)
Delay Time 205 ns
Fall Time 300 ns
Turn-off Switching Loss 650
Total Switching Loss 625
= 480 V, IC=7A,
cc
RG=10Ω,VGE=15V
V
= 480 V, IC=7A,
cc
RG=10Ω,VGE=15V
Tj = 125 °C
190 ns
410 ns
µJ
µJ
µJ
µJ
3/8
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