ST STGP7NB60F, STGD7NB60F User Manual

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STGP7NB60F - STGD7NB60F
N-CHANNEL 7A - 600V - TO-220 / DPAK
PowerMESH™ IGBT
PRELIMINARY DATA
TYPE
STGP7NB60F STGD7NB60F
HIGH INPUT IMPEDANCE
OFF LOSSES INCLUDE TAIL CURRENT
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
HIGH FREQUENCY OPERATION
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
V
CES
600 V 600 V
V
CE(sat) (Max)
@25°C < 2.4 V
< 2.4 V
cesat
)
I
C
@100°C
7A 7A
REEL (DPAK)
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de­signed an advanced family of IGBTs, the Power­MESH™ IGBTs, with outstanding perfomances. The suffix "F" identifies a family optimized to achieve very low switching switching t im es for f re­quency application s (<40KHZ)
3
TO-220
3
2
1
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
MOTOR CONTROLS
SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TO-220 DPAK
V
CES
V
GE
I
C
I
C
I
CM
P
TOT
T
stg
T
j
() PULSE WIDTH LIMITED BY SAFE OPERATING AREA
June 2003
This is preliminary information on anew product nowin development or undergoing evaluation. Details are subject to change without notice.
Collector-Emitter Voltage (VGS=0)
600 V Gate-Emitter Voltage ±20 V Collector Current (continuous) at TC=25°C Collector Current (continuous) at TC=100°C
()
Collector Current (pulsed) 56 A Total Dissipation at TC= 25°C
80 70 W
14 A
7A
Derating Factor 0.64 0.56 W/°C Storage Temperature – 55 to 150 °C Max. Operating Junction Temperature 150 °C
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STGP7NB60F - STGD7NB60F
THERMAL DATA
TO-220 DPAK
Rthj-case Thermal Resistance Junction-case Max 1.56 1.78 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage Current (V
CE
=0)
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage Collector-Emitter Saturation
Voltage
IC= 250 µA, VGE= 0 600 V
V
= Max Rating, TC=25°C
CE
VCE= Max Rating, TC= 125 °C V
=±20V,VCE= 0 ±100 nA
GE
V
CE=VGE,IC
VGE=15V,IC=7A VGE=15V,IC= 7 A, Tj =125°C
= 250µA
35V
2 2.4 V
1.5 V
10 µA
100 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
C
ies
C
oes
C
res
Input Capacitance Output Capacitance 80 pF Reverse Transfer
=25V,f=1MHz,VGE=0
CE
540 pF
13 pF
Capacitance
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge Gate-Emitter Charge Gate-Collector Charge
Latching Current V
= 480V, IC=7A,
V
CE
=15V
V
GE
= 480 V
clamp
Tj = 125°C , R
=10
G
37
50
4
18 28 A
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
=480V,IC=7A
t
d(on)
t
(di/dt)
Eon
Turn-on Delay Time
r
Rise Time Turn-on Current Slope
on
Turn-on Switching Losses
V
CC
R
=10Ω,VGE=15V
G
V
= 480 V, IC=7ARG=10
CC
= 15 V,Tj =125°C
V
GE
17
6
900
60
nC nC nC
ns ns
A/µs
µJ
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STGP7NB60F - STGD7NB60F
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
E
ts
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
E
ts
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Cross-over Time
)
Off Voltage Rise Time 45 ns
)
Delay Time 110 ns Fall Time 140 ns Turn-off Switching Loss 240 Total Switching Loss 290 Cross-over Time
)
Off Voltage Rise Time 135 ns
)
Delay Time 205 ns Fall Time 300 ns Turn-off Switching Loss 650 Total Switching Loss 625
= 480 V, IC=7A,
cc
RG=10,VGE=15V
V
= 480 V, IC=7A,
cc
RG=10,VGE=15V Tj = 125 °C
190 ns
410 ns
µJ µJ
µJ µJ
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STGP7NB60F - STGD7NB60F
Fig. 2: Test Circuit For Inductive Load SwitchingFig. 1: Gate Charge test Circuit
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TO-220 MECHANICAL DATA
STGP7NB60F - STGD7NB60F
DIM.
A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154
L20 16.40 0.645 L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
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STGP7NB60F - STGD7NB60F
P032P_B
TO-252 (DPAK) MECHANICAL DATA
DIM.
A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039
V2 0
MIN. TYP. MAX. MIN. TYP. MAX.
o
mm inch
o
8
o
0
o
0
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STGP7NB60F - STGD7NB60F
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
All di m ensions
are in millimeters
REEL MECHANICAL DATA
DIM.
A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7. 4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
* on sales type
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
2500 2500
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STGP7NB60F - STGD7NB60F
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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