Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "F" identifies a family optimized to
achieve very low switching switching t im es for f requency application s (<40KHZ)
3
TO-220
3
2
1
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ MOTOR CONTROLS
■ SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
TO-220DPAK
V
CES
V
GE
I
C
I
C
I
CM
P
TOT
T
stg
T
j
() PULSE WIDTH LIMITED BY SAFE OPERATING AREA
June 2003
This is preliminary information on anew product nowin development or undergoing evaluation. Details are subject to change without notice.
Collector-Emitter Voltage (VGS=0)
600V
Gate-Emitter Voltage±20V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C
()
Collector Current (pulsed)56A
Total Dissipation at TC= 25°C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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