Datasheet STGP7NB60F, STGD7NB60F Datasheet (ST)

查询STGD7NB60F供应商

STGP7NB60F - STGD7NB60F

N-CHANNEL 7A - 600V - TO-220 / DPAK

PowerMESH™ IGBT

PRELIMINARY DATA

TYPE

STGP7NB60F
STGD7NB60F

■ HIGH INPUT IMPEDANCE

■ LOW ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ HIGH FREQUENCY OPERATION

■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &

V

CES

600 V
600 V

V

CE(sat) (Max)

@25°C
< 2.4 V

< 2.4 V

cesat

)

I

C

@100°C

7A
7A

REEL (DPAK)

DESCRIPTION

Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de­signed an advanced family of IGBTs, the Power­MESH™ IGBTs, with outstanding perfomances.
The suffix "F" identifies a family optimized to
achieve very low switching switching t im es for f re­quency application s (<40KHZ)

3

TO-220

3

2

1

1

DPAK

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■ MOTOR CONTROLS

■ SMPS AND PFC AND BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

TO-220 DPAK

V

CES

V

GE

I

C

I

C

I

CM

P

TOT

T

stg

T

j

() PULSE WIDTH LIMITED BY SAFE OPERATING AREA

June 2003

This is preliminary information on anew product nowin development or undergoing evaluation. Details are subject to change without notice.

Collector-Emitter Voltage (VGS=0)

600 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C

()

Collector Current (pulsed) 56 A
Total Dissipation at TC= 25°C

80 70 W

14 A

7A

Derating Factor 0.64 0.56 W/°C
Storage Temperature – 55 to 150 °C
Max. Operating Junction Temperature 150 °C

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STGP7NB60F - STGD7NB60F

THERMAL DATA

TO-220 DPAK

Rthj-case Thermal Resistance Junction-case Max 1.56 1.78 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collectro-Emitter Breakdown
Voltage

I

CES

I

GES

Collector cut-off

=0)

(V

GE

Gate-Emitter Leakage
Current (V

CE

=0)

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(sat)

Gate Threshold Voltage
Collector-Emitter Saturation

Voltage

IC= 250 µA, VGE= 0 600 V

V

= Max Rating, TC=25°C

CE

VCE= Max Rating, TC= 125 °C
V

=±20V,VCE= 0 ±100 nA

GE

V

CE=VGE,IC

VGE=15V,IC=7A
VGE=15V,IC= 7 A, Tj =125°C

= 250µA

35V

2 2.4 V

1.5 V

10 µA

100 µA

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance 80 pF
Reverse Transfer

=25V,f=1MHz,VGE=0

CE

540 pF

13 pF

Capacitance

Q

g

Q

ge

Q

gc

I

CL

Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge

Latching Current V

= 480V, IC=7A,

V

CE

=15V

V

GE

= 480 V

clamp

Tj = 125°C , R

=10Ω

G

37

50

4

18
28 A

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

=480V,IC=7A

t

d(on)

t

(di/dt)

Eon

Turn-on Delay Time

r

Rise Time
Turn-on Current Slope

on

Turn-on Switching Losses

V

CC

R

=10Ω,VGE=15V

G

V

= 480 V, IC=7ARG=10Ω

CC

= 15 V,Tj =125°C

V

GE

17

6

900

60

nC
nC
nC

ns
ns

A/µs

µJ

2/8

STGP7NB60F - STGD7NB60F

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

c

tr(V

off

t

d(off

t

f

E

(**)

off

E

ts

t

c

tr(V

off

t

d(off

t

f

E

(**)

off

E

ts

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction temperature.

(**)Losses include Also the Tail (Jedec Standardization)

Cross-over Time

)

Off Voltage Rise Time 45 ns

)

Delay Time 110 ns
Fall Time 140 ns
Turn-off Switching Loss 240
Total Switching Loss 290
Cross-over Time

)

Off Voltage Rise Time 135 ns

)

Delay Time 205 ns
Fall Time 300 ns
Turn-off Switching Loss 650
Total Switching Loss 625

= 480 V, IC=7A,

cc

RG=10Ω,VGE=15V

V

= 480 V, IC=7A,

cc

RG=10Ω,VGE=15V
Tj = 125 °C

190 ns

410 ns

µJ
µJ

µJ
µJ

3/8

STGP7NB60F - STGD7NB60F

Fig. 2: Test Circuit For Inductive Load SwitchingFig. 1: Gate Charge test Circuit

4/8

TO-220 MECHANICAL DATA

STGP7NB60F - STGD7NB60F

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STGP7NB60F - STGD7NB60F

P032P_B

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024

C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039

V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

6/8

STGP7NB60F - STGD7NB60F

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All di m ensions

are in millimeters

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7. 4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

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STGP7NB60F - STGD7NB60F

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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