ST STGB20NB32LZ, STGB20NB32LZ-1 User Manual

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STGB20NB32LZ

STGB20NB32LZ-1

N-CHANNEL CLAMPED 20A - D2PAK/I2PAK

INTERNALLY CLAMPED PowerMESH™ IGBT

TYPE V

STGB20NB32LZ
STGB20NB32LZ-1

■ POLYSILICON GATE VOLTAGE DRIVEN

■ LOW THRESHOLD VOLTAGE

■ LOW ON-VOLTAGE DROP

■ HIGH CURRENT CAPABILITY

■ HIGH VOLTAGE CLAMPING FEATURE

■ SURFACE-MOUNTING D²PAK (TO-263)

CES

CLAMPED
CLAMPED

V

CE(sat)

< 2.0 V
< 2.0 V

I

C

20 A
20 A

POWER PACKAGE IN TUBE (NO SUFFIX)OR
IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

Using the lat es t high voltage t echnology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH

™

IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.

APPLICATIONS

■ AUTOMOTIVE IGNITION

3

D2PAK

1

I2PAK

2

1

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

V

ECR

V

GE

I

C

I

C

I

CM

Eas

P

tot

E

SD

T

stg

T

j

(•)Pulse width limited by safe operating area

Collector-Emitter Voltage (VGS=0)
Reverse Battery Protection 20 V
Gate-Emitter Voltage CLAMPED V
Collector Current (continuous) at Tc= 25°C
Collector Current (continuous) at Tc= 100°C

()

Collector Current (pulsed) 80 A
Single Pulse Energy T
Total Dissipation at Tc=25°C
Derating Factor 1 W/°C
ESD (Human Body Model) 4 KV
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C

= 25°C

c

CLAMPED V

40 A
30 A

700
150 W

mJ

1/11December 2002

STGB20NB32LZ - STGB20NB32LZ-1

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.2 °C/W

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS O THERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

BV

BV

(CES)

(ECR)

Clamped Voltage

Emitter Collector Break-down

=2mA,VGE= 0, Tc= - 40°C

C

IC=2mA,VGE= 0, Tc= 25°C

=2mA,VGE= 0, Tc= 150°C

I

C

=75mA,Tc=25°C 20 28

I

C

330 355 380 V
325 350 375 V
320 345 370 V

Voltage

BV

GE

Gate Emitter Break-down

IG=±2mA 121416

Voltage

I

CES

I

GES

R

GE

Collector cut-off Current

=0)

(V

GE

Gate-Emitter Leakage
Current (V

CE

=0)

Gate Emitter Resistance 10 15 25 KΩ

=15V,VGE=0 ,TC=150 °C

V

CE

VCE=200 V, VGE=0 ,TC=150°C
V

=±10V,VCE= 0 ± 400 ± 660 ± 1000

GE

10 µA

100 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(SAT)

Gate Threshold Voltage

Collector-Emitter Saturation
Voltage

V

CE=VGE,IC

VCE=VGE,IC= 250µA, Tc= 25°C
V

CE=VGE,IC

VGE=4.5V, IC=10A,Tc=25°C

=4.5V, IC= 10 A, Tc= 150°C

V

GE

=4.5V, IC=20A,Tc=25°C

V

GE

VGE=4.5V, IC= 20 A, Tc= 150°C

= 250µA, Tc=-40°C

= 250µA, Tc=150°C

1.2
1V

1.4 2

0.6 V

1.1 1.8 V
1 1.7 V

1.35 2 V

1.25 2 V

V

V

µA

V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

=25V,IC=20 A

CE

V

= 25 V, f = 1 MHz, VGE=0

CE

VGE=5V

35 S

2300 pF

28 pF

51 nC

2/11

g

fs

C

ies

C

oes

C

res

Q

g

Forward Transconductance
Input Capacitance
Output Capacitance 165 pF
Reverse Transfer

Capacitance
Gate Charge VCE= 280 V,IC=20A,

STGB20NB32LZ - STG B 20NB32L Z-1

FUNCTIONAL CHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

II Latching Current V

U.I.S. Functional Test Open

Secondary Coil

=250V,TC= 150 °C

Clamp

=1KΩ,VGE= 4.5 V

R

GOFF

R

=1KΩ,L=3mH,Tc=25°C

GOFF

=1KΩ , L = 3mH ,Tc=150°C

R

GOFF

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

Delay Time

r

Rise Time
Turn-on Current Slope VCC= 250 V,IC=20A

on

VCC=250V,IC=20A
R

=1KΩ,VGE= 4.5 V

G

=1KΩ,VGE= 4.5 V

R

G

Eon Turn-on Switching Losses VCC= 250 V,IC=20A,Tc=25°C

=1KΩ,VGE= 4.5 V,Tc=150°C

R

G

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

c

tr(V

off

t

f

t

(

d

off

(**)

E

off

t

c

t

r(Voff

t

f

t

d(off

E

(**)

off

(**)Losses Include Also the Tail (jedec Standardization)

Cross-Over Time

)

Off Voltage Rise Time 2.6 µs
Fall Time 2µs

)

Off Voltage Delay Time 11.5 µs
Turn-off Switching Loss 11.8 mJ
Cross-Over Time

)

Off Voltage Rise Time 3.5 µs
Fall Time 3.9 µs

)

Off Voltage Delay Time 12 µs
Turn-off Switching Loss 17.8 mJ

= 250 V,IC=20A,

cc

RGE=1KΩ,VGE= 4.5 V

V

= 250 V,IC=20A,

cc

R

=1KΩ,VGE= 4.5 V

GE

Tc = 150 °C

80 A

21.6
15

26
18

2.3

0.6

550 A/µs

8.8

9.2

4.8 µs

7.8 µs

A
A

µs
µs

mJ
mJ

Thermal Impedance

3/11

STGB20NB32LZ - STGB20NB32LZ-1

Output Characteristics

Transfer Characteristics

TransconductanceNormalized Gate Threshold Voltage vs Temp.

Collector-Emitter On Voltage vs Te mpera ture

4/11

Capacitance Variations