ST STGB18N40LZ, STGD18N40LZ User Manual
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Features
STGB18N40LZ
STGD18N40LZ
EAS 180 mJ - 400 V - internally clamped IGBT
■ AEC Q101 compliant
■ 180 mJ of avalanche energy @ T
= 150 °C,
C
L = 3 mH
■ ESD gate-emitter protection
■ Gate-collector high voltage clamping
■ Logic level gate drive
■ Low saturation voltage
■ High pulsed current capability
■ Gate and gate-emitter resistor
Application
■ Pencil coil electronic ignition driver
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
IPAK
I²PAK
3
2
1
3
2
1
3
1
DPAK
D²PAK
Figure 1. Internal schematic diagram
3
1
Table 1. Device summary
Order codes Marking Package Packaging
STGD18N40LZT4 GD18N40LZ DPAK Tape and reel
STGD18N40LZ-1 GD18N40LZ IPAK Tube
STGB18N40LZT4 GB18N40LZ D²PAK Tape and reel
STGB18N40LZ-1 GB18N40LZ I²PAK Tube
March 2008 Rev 2 1/18
www.st.com
18
Contents STGD18N40LZ - STGB18N40LZ
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/18
STGD18N40LZ - STGB18N40LZ Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Val ue
Symbol Parameter
V
V
I
P
I
C
CP
V
E
E
CES
ECS
TOT
Collector-emitter voltage (vGE = 0) V
Emitter collector voltage (VGE = 0) 20 V
(1)
Collector current (continuous) at TC = 100 °C 25 30 A
(2)
Pulsed collector current 40 A
Gate-emitter voltage V
GE
Total dissipation at TC = 25 °C 125 150 W
Single pulse energy TC= 25 °C, L = 3 mH, RG = 1 KΩ 300 mJ
AS
Single pulse energy TC=150 °C, L = 3 mH, RG = 1 KΩ 180 mJ
AS
Human body model, R= 1550 Ω, C = 100 pF 8 kV
E
Machine model, R = 0, C = 100 pF 800 V
SD
Charged device model 2 kV
T
T
1. Calculated according to the iterative formula:
Storage temperature
stg
Operating junction temperature
j
ICTC()
---------------------------------- --------------------------------------------- -----------------------=
R
T
–
JMAXTC
THJ C–VCESAT MAX()TCIC
,()×
DPAK
IPAK
CES(clamped)
GE(clamped)
D²PAK
I²PAK
– 55 to 175 °C
Unit
V
V
2. Pulse width limited by max. junction temperature allowed
Table 3. Thermal resistance
Symbol Parameter
R
thj-case
R
thj-amb
Thermal resistance junction-case max 1.2 1 °C/W
Thermal resistance junction-ambient max 65 62.5 °C/W
DPAK
IPAK
Val ue
D²PAK
I²PAK
Unit
3/18
Electrical characteristics STGD18N40LZ - STGB18N40LZ
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CES(clamped)
V
(BR)ECS
V
GE(clamped)
I
CES
I
GES
R
GE
R
G
V
GE(th)
V
GEP
Collector emitter
clamped voltage
= 0)
(V
GE
Emitter collector
break-down voltage
= 0)
(V
GE
Gate emitter
clamped voltage
Collector cut-off
current
= 0)
(V
GE
Gate cut-off
current (VCE = 0)
Gate emitter
resistance
Gate resistance 1.6 KΩ
Gate threshold
voltage
Gate emitter plateau
voltage
IC = 2 mA, RG = 1 kΩ
= - 40 °C to 150 °C
T
C
= 75 mA 20 28 V
I
C
= ±2 mA 12 16 V
I
G
V
= 15 V, TC = 150 °C 10 µA
CE
370 400 430 V
VCE = 200 V,TC = 150 °C 100 µA
VGE = ±10 V 450 625 830 µA
12 16 22 KΩ
= 12 V, IC = 1 mA,TC = -40 °C 1.4 V
V
CE
= 12 V, IC = 1 mA 1.2 1.6 2.3 V
V
CE
= 12 V, IC = 1 mA, TC =150 °C 0.7 V
V
CE
= 12 V, IC = 10 A 2.9 V
V
CE
VGE = 4.5 V, IC = 10 A 1.35 1.7 V
V
CE(sat)
Collector emitter
saturation voltage
V
GE
TC = 150 °C
V
GE
4/18
= 4.5 V, IC = 10 A,
1.30 V
= 3.8 V, IC = 6 A 1.30 V
STGD18N40LZ - STGB18N40LZ Electrical characteristics
Table 5. Dynamic electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
C
Q
Input capacitance
ies
Output capacitance 90 pF
oes
Reverse transfer capacitance 6.5 pF
res
Gate charge
g
= 25 V, f = 1 MHz,
V
CE
= 0
V
GE
VCE = 280 V, IC = 10 A,
= 5 V
V
GE
490 pF
23 nC
Table 6. Switching on/off
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(on)
t
r
t
d(off)
t
f
dv/dt
t
d(off)
t
f
dv/dt
Resistive load
Turn-on delay time
Rise time
Resistive load
Turn-on delay time
Rise time
Inductive load
Turn-off delay time
Fall time
Turn-off voltage slope
Inductive load
Turn-off delay time
Fall time
Turn-off voltage slope
V
= 14 V, IC = 10 A
CC
= 1 kΩ, VGE = 5 V
R
G
V
= 14 V, IC = 10 A
CC
= 1 kΩ, VGE = 5 V,
R
G
TC = 150 °C
= 300 V, L = 1 mH
V
CC
= 1 kΩ, VGE = 5 V
R
G
= 300 V, L = 1 mH
V
CC
= 1 kΩ, VGE = 5 V
R
G
= 150 °C
T
C
1
5.8
1
5.9
14
6.7
90
15
9.8
80
µs
µs
µs
µs
µs
µs
V/µs
µs
µs
V/µs
5/18
Electrical characteristics STGD18N40LZ - STGB18N40LZ
2.1 Electrical characteristics (curves)
Figure 2. Collector-emitter voltage vs
temperature
Figure 4. Collector-emitter voltage vs
temperature
Figure 3. Collector-emitter voltage vs
temperature
Figure 5. Self clamped inductive switch
Figure 6. Collector current vs collector
IC (A)
6/18
emitter voltage @ 25 °C
60
VGE = 8 V
50
VGE = 5 V
40
30
20
10
0
1
0
→
2
TC = 25 °C
3
HV42380
V
= 4.
5 V
GE
VGE = 4 V
VGE = 3.8 V
45
VCE (V)
Figure 7. Collector current vs collector
emitter voltage @ -40 °C
IC (A)
60
VGE = 8 V
50
40
30
20
10
VGE = 5 V
0
0123 456
TC = -40 °C
HV42390
VGE = 4.5 V
VGE = 4 V
VGE = 3.8 V
VCE (V)
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