ST STGP14NC60KD, STGF14NC60KD, STGB14NC60KD User Manual

STGP14NC60KD - STGF14NC60KD

STGB14NC60KD

N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK

SHORT CIRCUIT RATED PowerMESH™ IGBT

Table 1: General Features

TYPE	VCES	VCE(sat) (Max)	IC (#)
		@25°C	@100°C
STGB14NC60KD	600 V	< 2.5 V	14 A
STGF14NC60KD	600 V	< 2.5 V	7 A
STGP14NC60KD	600 V	< 2.5 V	14 A

■LOWER ON-VOLTAGE DROP (Vcesat)

■OFF LOSSES INCLUDE TAIL CURRENT

■LOWER CRES / CIES RATIO

■SWITCHING LOSSES INCLUDE DIODE RECOVERY ENERGY

■VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE

■NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION

DESCRIPTION

Figure 1: Package

3	3
2	2
1	1
TO-220	TO-220FP
	3
	1
	D2PAK
Figure 2: Internal Schematic Diagram

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.

APPLICATIONS

■HIGH FREQUENCY INVERTERS

■SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

■MOTOR DRIVERS

Table 2: Order Codes

	SALES TYPE	MARKING	PACKAGE	PACKAGING
	STGB14NC60KDT4	GB14NC60KD	D2PAK	TAPE & REEL
	STGF14NC60KD	GF14NC60KD	TO-220FP	TUBE
	STGP14NC60KD	GP14NC60KD	TO-220	TUBE
				Rev.2
July 2005				1/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Table 3: Absolute Maximum ratings

Symbol	Parameter	Value				Unit
		STGB14NC60KD		STGF14NC60KD
		STGP14NC60KD
VCES	Collector-Emitter Voltage (VGS = 0)	600				V
VECR	Emitter-Collector Voltage	20				V
VGE	Gate-Emitter Voltage	±20				V
IC	Collector Current (continuous) at TC = 25°C (#)	25			11	A
IC	Collector Current (continuous) at TC = 100°C (#)	14			7	A
ICM ( )	Collector Current (pulsed)	50				A
IF	Diode RMS Forward Current at TC = 25°C	20				A
PTOT	Total Dissipation at TC = 25°C	80			25	W
	Derating Factor	0.64			0.20	W/°C
VISO	Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)	--			2500	V
Tstg	Storage Temperature	– 55 to 150				°C
Tj	Operating Junction Temperature

( ) Pulse width limited by Max Junction Temperature.

Table 4: Thermal Data

			Min.	Typ.	Max.
Rthj-case	Thermal Resistance Junction-case	TO-220			1.56	°C/W
		D²PAK
		TO-220FP			5.0	°C/W
Rthj-amb	Thermal Resistance Junction-ambient				62.5	°C/W
TL	Maximum Lead Temperature for Soldering			300		°C
	Purpose (1.6 mm from case, for 10 sec.)

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: Main Parameters

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VBR(CES)	Collector-Emitter	IC= 1 mA, VGE= 0	600			V
	Breakdown Voltage
ICES	Collector cut-off Current	VCE= Max Rating, TC= 25°C			10	µA
	(VGE = 0)	VCE= Max Rating, TC= 125°C			1	mA
IGES	Gate-Emitter Leakage	VGE= ±20V , VCE= 0			±100	nA
	Current (VCE = 0)
VGE(th)	Gate Threshold Voltage	VCE= VGE, IC= 250 µA	5		7	V
VCE(sat)	Collector-Emitter Saturation	VGE= 15V, IC= 7A		2.0	2.5	V
	Voltage	VGE= 15V, IC= 7A, Tc= 125°C		1.8		V

(#) Calculated according to the iterative formula:

	IC	( TC) =	TJMAX – TC
			× VCESAT( MAX)(TC, IC-)
		RTHJ – C

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STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 6: Dynamic

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VCE = 15 V , IC = 7 A		3		S
Cies	Input Capacitance	VCE = 25 V, f= 1 MHz, VGE = 0		760		pF
Coes	Output Capacitance			86		pF
Cres	Reverse Transfer			15.5		pF
	Capacitance
Qg	Total Gate Charge	VCE = 390 V, IC = 7 A,		34.4		nC
Qge	Gate-Emitter Charge	VGE = 15 V		8.1		nC
Qgc	Gate-Collector Charge	(see Figure 21)		16.4		nC
tscw	Short Circuit Withstand Time	VCE = 0.5 VBR(CES),Tj = 125°C,	10			µs
		RG = 10 Ω, VGE = 12 V

Table 7: Switching On

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VCC = 390 V, IC = 7 A		22.5		ns
tr	Current Rise Time	RG= 10 Ω, VGE= 15V, Tj= 25°C		8.5		ns
(di/dt)on	Turn-on Current Slope	(see Figure 19)		700		A/µs
td(on)	Turn-on Delay Time	VCC = 390 V, IC = 7 A		22		ns
tr	Current Rise Time	RG= 10 Ω, VGE= 15V, Tj= 125°C		9.5		ns
(di/dt)on	Turn-on Current Slope	(see Figure 19)		680		A/µs

Table 8: Switching Off

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tr(Voff)	Off Voltage Rise Time	Vcc = 390 V, IC = 7 A,		60		ns
td(off)	Turn-off Delay Time	RGE = 10 Ω , VGE = 15 V		116		ns
tf	Current Fall Time	TJ = 25 °C		75		ns
		(see Figure 19)
tr(Voff)	Off Voltage Rise Time	Vcc = 390 V, IC = 7 A,		24		ns
td(off)	Turn-off Delay Time	RGE = 10 Ω , VGE = 15 V		196		ns
tf	Current Fall Time	Tj = 125 °C		144		ns
		(see Figure 19)

Table 9: Switching Energy

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
Eon (2)	Turn-on Switching Losses	VCC = 390 V, IC = 7 A		82		µJ
Eoff (3)	Turn-off Switching Losses	RG= 10 Ω, VGE= 15V, Tj= 25°C		155		µJ
Ets	Total Switching Losses	(see Figure 19)		237		µJ
Eon (2)	Turn-on Switching Losses	VCC = 390 V, IC = 7 A		131		µJ
Eoff (3)	Turn-off Switching Losses	RG= 10 Ω, VGE= 15V, Tj= 125°C		370		µJ
Ets	Total Switching Losses	(see Figure 19)		501		µJ

(1)Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

(2)Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)

(3)Turn-off losses include also the tail of the collector current.

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STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Table 10: Collector-Emitter Diode

Symbol	Parameter	Test Condiction	Min.	Typ.	Max.	Unit
Vf	Forward On-Voltage	If = 3.5 A		1.3	1.9	V
		If = 3.5 A, Tj = 125 °C		1.1		V
trr	Reverse Recovery Time	If = 7 A, VR = 40 V,		37		ns
ta		Tj = 25 °C, di/dt = 100 A/µs		22		ns
Qrr	Reverse Recovery Charge			40		nC
Irrm	Reverse Recovery Current			2.1		A
S	Softness factor of the diode			0.68
trr	Reverse Recovery Time	If = 7 A, VR = 40 V,		61		ns
ta		Tj = 125 °C, di/dt = 100 A/µs		34		ns
Qrr	Reverse Recovery Charge			98		nC
Irrm	Reverse Recovery Current			3.2		A
S	Softness factor of the diode			0.79

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STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Figure 3: Output Characteristics

Figure 4: Transconductance

Figure 5: Collector-Emitter On Voltage vs Collector Current

Figure 6: Transfer Characteristics

Figure 7: Collector-Emitter On Voltage vs Temperature

Figure 8: Normalized Gate Threshold vs Temperature

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