Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow
erMESH™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short cir
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Short Circuit Withstand TimeVCE = 0.5 V
Table 7: Switching On
SymbolParameterTest ConditionsMin.Typ.Max.Unit
t
d(on)
t
(di/dt)
t
d(on)
t
(di/dt)
r
r
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
on
VCE = 15 V, IC= 5 A 15S
VCE = 25V, f = 1 MHz, VGE = 0380
46
8.5
VCE = 390 V, IC = 5 A,
VGE = 15V,
(see Figure 20)
, Tj = 125°C
BR(CES)
10µs
19
5
9
RG = 10 Ω, VGE = 12V
VCC = 390 V, IC = 5 A
RG= 10Ω, VGE= 15V, Tj= 25°C
(see Figure 18)
VCC = 390 V, IC = 5 A
RG= 10Ω, VGE= 15V, Tj=125°C
(see Figure 18)
17
6
655
16.5
6.5
575
pF
pF
pF
nC
nC
nC
ns
ns
A/µs
ns
ns
A/µs
Table 8: Switching Off
SymbolParameterTest ConditionsMin.Typ.Max.Unit
tr(V
)
td(
off
off
t
f
Off Voltage Rise Time
Turn-off Delay Time
)
Current Fall Time
Vcc = 390 V, IC = 5 A,
RGE = 10 Ω , VGE = 15 V
TJ = 25 °C
33
72
82
ns
ns
ns
(see Figure 18)
tr(V
)
td(
off
off
t
f
Off Voltage Rise Time
Turn-off Delay Time
)
Current Fall Time
Vcc = 390 V, IC = 5 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
60
106
136
ns
ns
ns
(see Figure 18)
Table 9: Switching Energy
SymbolParameterTest ConditionsMin.Typ.Max.Unit
Eon (2)
E
off
E
ts
Eon (2)
E
off
E
ts
(1) Pulsed: Pulse du ration = 300 µ s, duty cycl e 1.5%
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode i s us ed as extern al di ode. IGBTs & DIODE are at the same tem perature (25°C and 125°C)
(3)Turn-off los ses include al so the tail of t he collector current.