ST STGB10NB40LZ User Manual
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STGB10NB40LZ
N-CHANNEL CLAMPED 20A - D²PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE V
STGB10NB40LZ CLAMPED < 1.8 V20A
■ POLYSILICON GATE VOLTAGE DRIVEN
■ LOW THRESHOLD VOLTAGE
■ LOW ON-VOLTAGE DROP
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ HIGH VOLTAGE CLAMPING FEATURE
CES
V
CE(sat)
I
C
DESCRIPTION
Using thelatest highvoltage t echnology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
■ AUTOMOTIVE IGNITION
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STGB10NB40LZT4 GB10NB40LZ
2
PAK
D
TAPE & REEL
1/10August 2003
STGB10NB40LZ
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
Eas Single Pulse Energy Tc = 25°C 300
P
TOT
E
SD
T
stg
T
j
()Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Collector-Emitter Voltage (VGS=0)
CLAMPED V
Emitter-Collector Voltage 18 V
Gate-Emitter Voltage CLAMPED V
Collector Current (continuos) at TC= 25°C
Collector Current (continuos) at TC= 100°C
()
Collector Current (pulsed) 40 A
Total Dissipation at TC= 25°C
20 A
10 A
150 W
Derating Factor 1 W/°C
ESD (Human Body Model) 4 KV
Storage Temperature
Operating Junction Temperature
–55to175 °C
mJ
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
(CES)
Clamped Voltage IC=2mA,VGE=0,
380 410 440 V
Tj= - 40°C to 150°C
BV
(ECR)
Emitter Collector Break-down
IC=75mA,Tj=25°C 18 V
Voltage
BV
GE
Gate Emitter Break-down
=±2mA 12 16 V
I
G
Voltage
I
CES
I
GES
R
GE
Collector cut-off Current
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
Gate Emitter Resistance 20 KΩ
V
=15V,VGE=0,Tj=150°C
CE
= 200 V, VGE=0,Tj= 150°C
V
CE
V
=±10V,VCE= 0 ± 700 µA
GE
100 µA
10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
Gate Threshold Voltage VCE=VGE,IC= 250 µA,
TC= - 40°C to 150°C
Collector-Emitter Saturation
Voltage
VGE=4.5V, IC=10A,Tj=25°C
V
=4.5V, IC=20A,Tj=25°C
GE
0.6 2.2 V
1.2 1.8 V
1.3 V
2/10
STGB10NB40LZ
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
C
ies
C
oes
C
res
Q
g
FUNCTIONAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
II Latching Current V
U.I.S. Functional Test Open
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)
Eon Turn-on Switching Losses VCC= 328 V, IC=10A,TC=25°C
Forward Transconductance VCE=15V,IC=10A
Input Capacitance VCE= 25V, f = 1 MHz, VGE=0
Output Capacitance
Reverse Transfer
18 S
1300 pF
105 pF
12 pF
Capacitance
Gate Charge VCE= 328V, IC=10A,
28 nC
VGE=5V
=328V,TC= 125 °C
Clamp
=1KΩ,VGE=5V
R
GOFF
R
=1KΩ,L=1mH,
Secondary Coil
Turn-on Delay Time
Rise Time 270 ns
Turn-on Current Slope VCC= 328 V, IC=10A
on
GOFF
Tc= 125°C
V
=328V,IC=10A
CC
R
=1KΩ,VGE=5V
G
=1KΩ,VGE=5V
R
G
13 A
40 A
1300
60 A/µs
2.4
=1KΩ,VGE=5V,TC=125°C
R
G
2.6
ns
mJ
mJ
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
t
c
t
r(Voff
t
d(off
t
f
E
(**)
off
(1)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail
Cross-over Time
)
Off Voltage Rise Time 2 µs
)
Delay Time 8 µs
Fall Time 1.4 µs
Turn-off Switching Loss 5 mJ
Cross-over Time
)
Off Voltage Rise Time 2.7 µs
)
Delay Time 9.2 µs
Fall Time 2.8 µs
Turn-off Switching Loss 8.7 mJ
= 328 V, IC=10A,
cc
RGE=1KΩ,VGE=5V
V
= 328 V, IC=10A,
cc
R
=1KΩ,VGE=5V
GE
Tj = 125 °C
3.6 µs
5.7 µs
3/10
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