ST STGB10N60L User Manual

STGB10N60L

STGB10N60L

N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT

TYPE	VCES	VCE(sat )	IC
STGB10N60L	600 V	< 1.95 V	10 A

■HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

■VERY LOW ON-VOLTAGE DROP (Vcesat)

■LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT)

■HIGH CURRENT CAPABILITY

■OFF LOSSES INCLUDE TAIL CURRENT

■SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ºT4º)

APPLICATIONS

■ELECTRONIC IGNITION

■LIGHT DIMMER

■STATIC RELAYS

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D2PAK

TO-263

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol	Parameter	Value	Un it
VCES	Collector-Emitter Voltage (VGS = 0)	600	V
VECR	Reverse Battery Protection	25	V
VGE	Gate-Emitter Voltage	± 15	V
IC	Collector Current (continuous) at Tc = 25 oC	25	A
IC	Collector Current (continuous) at Tc = 100 oC	20	A
ICM(•)	Collector Current (pulsed)	100	A
Ptot	Total Dissipation at Tc = 25 oC	125	W
	Derating Factor	0.83	W/o C
Ts tg	Storage Temperature	-65 to 175	o C
Tj	Max. Operating Junction Temperature	175	o C

(•) Pulse width limited by safe operating area

June 1999

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STGB10N60L

THERMAL DATA

Rthj -case	Thermal Resistance Junction-case			Max	1.2	oC/W
Rthj -amb	Thermal	Resistance	Junction-ambient	Max	62.5	oC/W
Rthc-sink	Thermal	Resistance	Case-sink	Typ	0.1	oC/W

ELECTRICAL CHARACTERISTICS (Tj = - 40 to 150 oC unless otherwise specified)

OFF

Symbo l	Parameter	Test Con ditions		Min.	Typ. Max.	Unit
VBR(c es)	Collector-Emitt er	IC = 250 μA VGE = 0		600		V
	Breakdown Voltage
ICES	Collector cut-off	VCE = Max Rating	Tj =	25 oC	25	μA
	(VGE = 0)	VCE = Max Rating	Tj = 125 oC		100	μA
IGES	Gate-Emitter Leakage	VGE = ± 15 V	VCE = 0		± 100	nA
	Current (VCE = 0)

ON ( )

Symbo l	Parameter	Test Con ditions			Min.	Typ.	Max.	Unit
VGE(th)	Gate Threshold	VCE = VGE	IC = 250 μA	Tj = 25 oC	0.6		2.4	V
	Voltage	VCE = VGE	IC = 250 μA		1.0		2.0	V
VCE(SAT )	Collector-Emitt er	VGE = 4.5 V	IC = 8 A	Tj = - 40 oC		1.5		V
	Saturation Voltage	VGE = 4.5 V	IC = 9.5 A	Tj = 25 oC		1.4	2.0	V
		VGE = 4.5 V	IC = 8 A Tj = 150 oC			1.25		V
IC	Collector Current	VGE = 4.5 V	VCE = 7 V		15	45		A

DYNAMIC

Symbo l	Parameter	Test Con ditions			Min.	Typ.	Max.	Unit
gf s	Forward	VCE =25 V	IC = 8 A	Tj = 25 oC	7	12		S
	Transconductance
Ci es	Input Capacitance	VCE = 25 V	f = 1 MHz	VGE = 0		1800	2600	pF
Co es	Output Capacitance					120	165	pF
Cres	Reverse Transfer					19	26	pF
	Capacitance
QG	Gate Charge	VCE = 400 V	IC = 8 A	VGE = 5 V		30		nC

FUNCTIONAL CHARACTERISTICS

Symbo l	Parameter	Test Con ditions		Min.	Typ. Max. Unit
ICL	Latching Current	Vclamp = 480 V	dV/dt = 200 V/μs	20	A
		Tj = 125 oC
ECF	Forward Clamping	Tstart = 55 oC	Vcl amp = 480 V	210	mJ
	Energy	IC = 10 A L = 4.2 mH - Single Pulse
EAR	Reverse Avalanche			10	mJ
	Energy

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STGB10N60L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l	Parameter	Test Con ditions		Min. Typ. Max. Unit
td(on)	Delay Time	VCC = 480 V	IC = 8 A	0.7	μs
tr	Rise Time	VGE= 5 V	R G = 1 KΩ	1.9	μs
(di/dt)on	Turn-on Current Slope	VCC = 480 V	IC = 8 A	5	A/μs
		RG = 1 KΩ	V GE = 5 V
Eo n	Turn-on	Tj = 125 oC		2.5	mJ
	Switching Losses

SWITCHING OFF

Symbo l Parameter Test Con ditions Min. Typ. Max. Unit

tc	Cross-Over Time
tr(voff)	Off Voltage Rise Time
tf	Fall Time
Eo ff(**)	Turn-off Switching Loss
tc	Cross-Over Time
tr(voff)	Off Voltage Rise Time
tf	Fall Time
Eo ff(**)	Turn-off Switching Loss

VCC = 480 V

RGE = 1 KΩ Tj = 25 oC

VCC = 480 V

RGE = 1 KΩ Tj = 125 oC

(•) Pulse width limited by safe operating area

( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization)

IC = 8 A	4	μs
VGE = 5 V	2.5	μs
	1.5	μs
	9.0	mJ
IC = 8 A	6	μs
VGE = 5 V	3.3	μs
	2.5	μs
	10.8	mJ

Safe Operating Area

Thermal Impedance

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