(A114-B, Class II)
– 200 V machine model (A115-A)
– 1000 V charged-device model (C101)
Description
The STG5123 is a high speed CMOS low voltage
single analog SPDT (single-pole double-throw)
switch or 2:1 multiplexer/demultiplexer switch
manufactured using silicon gate C
technology. Designed to operate from a 1.65 to
4.5 V supply, this device is ideal for portable
applications.
The device offers very low ON-resistance (1 Ω)
at V
= 4.5 V. Switch S1 is ON (connected to
CC
common ports Dn) when the SEL input is held
high, and OFF (state of high impedance exists
between the two ports) when SEL is held low.
2
MOS
STG5123
Low voltage 1 Ω single SPDT switch
with break-before-make feature
Datasheet − production data
DFN6L
Switch S2 is ON (connected to common port D)
when the SEL input is held low, and OFF (state
of high impedance exists between the two ports)
when SEL is held high.
Additional key features are fast switching speed,
break-before-make delay time and ultra low power
consumption. All inputs and outputs are equipped
with protection circuits to protect against static
discharge, giving them immunity from ESD and
transient excess voltage.
Table 1.Device summary
Order codePackagePackaging
STG5123DTR
JSTG5123-CD1Unsawn wafer
DFN6L
(1.2 x 1 mm)
Tape and reel
April 2012Doc ID 14102 Rev 51/22
This is information on a product in full production.
Stressing the device above the rating listed in Table 4: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in Table 5: Recommended
operating conditions of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability. Refer also to the
STMicroelectronics™ SURE program and other relevant quality documents.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
I
CC
V
V
V
V
I
IKC
I
I
OK
I
I
OP
or I
P
T
STG
T
CC
IC
O
IK
O
D
L
Supply voltage–0.5 to 5.5V
DC input voltage–0.5 to V
I
CC
DC control input voltage–0.5 to 5.5V
DC output voltage–0.5 to V
DC input diode current on control pin (V
DC input diode current (V
< 0 V)±50mA
IN
< 0 V)–50mA
SEL
CC
DC output diode current±20mA
DC output current±200mA
DC output current peak
(pulse at 1 ms, 10% duty cycle)
DC VCC or ground current±100mA
GND
Power dissipation at TA = 70 °C
(1)
±400mA
1120mW
Storage temperature–65 to 150°C
Lead temperature (10 s)300°C
+0.5V
+0.5V
1. Derate above 70 °C by 18.5 mW/°C.
Table 5.Recommended operating conditions
SymbolParameterValueUnit
V
CC
V
V
IC
V
O
T
op
dt/dv
I
Supply voltage 1.65 to 4.5V
Input voltage0 to V
Control input voltage0 to 4.5V
Output voltage0 to V
Operating temperature–40 to 85°C
V
= 1.65 to 2.7 V0 to 20
Input rise and fall time
control input
CC
V
= 3.0 to 4.5 V0 to 10
CC
6/22Doc ID 14102 Rev 5
CC
CC
V
V
ns/V
STG5123Electrical characteristics
3 Electrical characteristics
3.1 DC electrical characteristics
Table 6.DC specifications
Value
SymbolParameterV
1.65 – 1.950.65 V
2.3 – 2.51.21.2
V
High level input
IH
voltage
2.7 – 3.01.31.3
3.3 – 3.61.41.4
1.65 – 1.950.400.40
2.3 – 2.50.600.60
IL
Low level input
voltage
2.7 – 3.00.600.60
V
3.3 – 3.60.600.60
ON
Switch ONresistance
R
ON-resistance
ΔR
match between
ON
channels
(1)
(V)Test condition
CC
Min.Typ.Max.Min.Max.
CC
0.65 V
CC
4.51.61.6
4.50.800.80
1.8
2.71.31.61.8
3.01.21.51.7
V
= 0 V to V
S
IS = 100 mA
CC
2.03.03.5
4.51.01.21.4
1.8
2.70.05
3.00.05
V
at RON max
S
= 100 mA
I
S
0.06
4.50.05
1.8
1.01.51.5
UnitTA = 25 °C-40 to 85 °C
V
V
Ω
Ω
R
FLAT
I
OFF
I
I
CC
IN
ON-resistance
flatness
(2)
OFF state
leakage current
(Sn), (D)
Input leakage
current
Quiescent
supply current
2.70.450.600.70
3.00.430.500.60
= 0 V to V
V
S
IS = 100 mA
CC
4.50.390.500.60
4.3V
0 – 4.5V
1.65 – 4.5
= 0.3 or 4 V±20±100nA
S
= 0 to 4.5 V±0.1±1.0μA
SEL
V
= VCC or
SEL
GND
±0.1±1.0μA
Doc ID 14102 Rev 57/22
Ω
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