ST STG4160 User Manual

Low voltage 0.5 Ω single SPDT switch with

break-before-make feature and 15 kV contact ESD protection

Features

■ Wide operating voltage range:

V

(opr) = 1.65 to 4.8 V

CC

■ Low power dissipation:

I

= 0.2 µA (max.) at TA = 85 °C

CC

■ Low "ON" resistance:

–R

–R

–R

■ Separate supply voltage for switch and control

pins

■ Latch-up performance exceeds 100mA per

JESD 78, Class II

■ ESD performance tested on common pin

(D pin):
– 15 kV IEC-61000-4-2 ESD, contact

– 8 kV HBM JESD22 A114-B Class II

■ ESD performance tested on S1 and S2 pin:

– 8 kV IEC-61000-4-2 ESD, contact

■ ESD performance test on all other pins:

– 4 kV HBM (JESD22 A114-B Class II)
– 400 V machine model (JESD22 A115-A)
– 1500 V charged-device model

Applications

■ Mobile phones

Table 1. Device summary

= 0.75 Ω (TA = 25 ºC)

ON

at V

at V

at V

= 2.25 V

CC

= 0.50 Ω (TA = 25 ºC)

ON

= 3.0 V

CC

=0.40Ω (TA =25ºC)

ON

=4.3V

CC

discharge

discharge

(JESD22 C101)

STG4160

Flip-chip 8

Description

The STG4160 is a high-speed CMOS low voltage
single analog SPDT (single pole dual throw)
switch or 2:1 multiplexer/demultiplexer switch
fabricated in silicon gate C
designed to operate from 1.65 to 4.8 V, making
this device ideal for portable applications. It offers
low ON resistance (0.40 Ω typ.) at V
The SEL inputs are provided to control the
switches.

The switch S1 is ON (connected to common port
D) when the SEL input is held high and OFF (high
impedance state exists between the two ports)
when SEL is held low. The switch S2 is ON
(connected to common Port D) when the SEL
input is held low and OFF (high impedance state
exist between the two ports) when SEL is held
high.

Additional key features are fast switching speed,
break-before-make delay time and ultra power
consumption. All inputs and outputs are equipped
with protection circuits against static discharge,
giving them ESD immunity and transient excess
voltage.

2

MOS technology. It is

= 4.3 V.

CC

Order code Package Packing

STG4160BJR Flip-chip 8 Tape and reel

February 2009 Rev 2 1/19

www.st.com

19

Contents STG4160

Contents

1 Pin settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.1 Pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/19

STG4160 Pin settings

1 Pin settings

1.1 Pin connections

Figure 1. STG4160 pin connections

VL

S2

GND

S1

1.2 Pin description

Table 2. Pin assignment

Pin number Symbol Name and function

1 S1 Independent channel

2 GND Ground (0 V)

3 S2 Independent channel

4V

5V

6 SEL Control

7 D Common channel

Bump View Top View

45

3 6

2

7

8

1

VCC

SEL

D

GND

S1

GND

S2

VL

L

CC

8

1

7

2

6

3

4

5

Logic supply voltage

Positive supply voltage

D

SEL

V

CS00028

8 GND Ground (0 V)

3/19

Logic diagram STG4160

2 Logic diagram

Figure 2. Functional diagram

D

Figure 3. Circuit equivalent logic

S1

S2

SEL

S2

S1

Table 3. Truth table

SEL Switch S1 Switch S2

HON

L

1. High impedance

4/19

OFF

(1)

OFF

ON

(1)

STG4160 Maximum ratings

3 Maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.

Table 4. Absolute maximum ratings

Symbol Parameter Value Unit

V

CC

V

V

V

V

I

IKC

I

IK

I

OK

I

O

I

OP

I

or I

CC

P

T

stg

T

1. Derate above 70 ºC by 18.5 mW/C

Table 5. Recommended operating conditions

Supply voltage -0.5 to 5.5 V

Logic supply voltage -0.5 to 5.5 V

L

DC input voltage -0.5 to VCC +0.5 V

I

DC control input voltage -0.5 to VL +5.5 V

IC

DC output voltage -0.5 to VCC +0.5 V

O

DC input diode current on control pin (V

DC input diode current (V

<0V) ±50 mA

SEL

<0V) -50 mA

SEL

DC output diode current ± 20 mA

DC output current ± 300 mA

DC output current peak (pulse at 1ms, 10% duty cycle) ± 500 mA

DC VCC or ground current ± 100 mA

GND

Power dissipation at TA= 70ºC

D

(1)

500 mW

Storage temperature -65 to 150 °C

Lead temperature (10 sec) 260 °C

L

Symbol Parameter Value Unit

V

V

V

V

V

T

dt/dv

1. VL pin should not be left floating.

Supply voltage 1.65 to 4.8 V

CC

Logic supply voltage

L

Input voltage 0 to V

I

Control input voltage 0 to V

IC

Output voltage 0 to V

O

Operating temperature -40 to 85 °C

op

Input rise and fall time control
input

(1)

1.65 to V

= 1.65 to 2.7 V 0 to 20

V

L

= 3.0 to 4.8 V 0 to 10

V

L

CC

CC

L

CC

V

V

V

V

ns/V

5/19

Electrical characteristics STG4160

4 Electrical characteristics

Table 6. DC specifications

Symbol Parameter

V

IH

V

IL

High level
input voltage

Low level
input voltage

V

CC

(V)

1.65 – 4.3

1.65 – 4.3

1.8

2.25 0.75 1.0 1.3

ON

ON resistance

R

3 0.50 0.65 0.8

3.7 0.45 0.55 0.7

4.3 0.40 0.5 0.65

1.8

2.25 20

310

3.7 10

ΔR

ON resistance
match

ON

between
channels

(1)

4.3 10

Val ue

V

(V)

L

Test condition

= 25 °C -40 to 85 °C

A

Min Typ Max Min Max

1.65 – 1.95 1.25 1.25

2.3 – 2.7 1.75 1.75

3.0 – 3.6 2.34 2.34

4.3 2.80 2.80

1.65 – 1.95 0.6 0.6

2.3 – 2.7 0.8 0.8

3.0 – 3.6 1.05 1.05

4.3 1.5 1.5

1.5 2.5 3.7

=0V to

V

S

1.65 – 4.3

V

CC

IS=100mA

40

=0V to

V

S

1.65 – 4.3

V

CC

IS=100mA

UnitT

V

V

Ω

mΩ

1.8

R

FLAT

ON resistance
flatness

(2)

2.25 300 430 550

3 150 190 270

1.65 – 4.3

3.7 140 180 230

VS=0V to
V

CC

IS=100mA

4.3 140 180 220

I

OFF

I

ON

I

D

Sn OFF state
leakage
current

Sn ON state
leakage
current

D ON state
leakage
current

4.3 4.3

4.3 4.3

4.3 4.3

VS= 0.3 to 4.0
V

D

VS= 0.3 to 4.0
V

D

VS= open
V

D

6/19

= 0.3 to 4.0

= open

= 0 to 4.0

1.0 1.7 2.0

mΩ

-30 30 -300 300 nA

-30 30 -300 300 nA

-30 30 -300 300 nA