ST STG4159 User Manual

Low voltage 0.3 Ω max single SPDT switch with

break-before-make feature and 10 kV contact ESD protection

Features

■ Wide operating voltage range:

V

(opr) = 1.65 V to 4.8 V

CC

■ Low power dissipation:

I

= 0.2 µA (max.) at TA = 85 °C

CC

■ Low “ON” resistance V

–R

■ Separate supply voltage for switch and control

= 0.40 Ω (max. TA = 25 °C) at

ON

V

= 2.25 V

CC

= 0.35 Ω (max. TA = 25 °C) at

ON

V

= 3.0 V

CC

= 0.30 Ω (max. TA = 25 °C) at

ON

V

= 4.3 V

CC

■ Latch-up performance exceeds 100 mA per

JESD 78, class II

■ ESD performance tested on common channel

(D pin) – 10 kV IEC-61000-4-2 ESD, contact

discharge

– 15 kV IEC-61000-4-2 ESD, air discharge

■ ESD performance test on all other pins

– 10 kV IEC-61000-4-2 ESD, contact

discharge – 500 V machine model (JESD22 A115-A) – 1500 V charged-device model

(JESD22 C101)

= 0 V:

IN

STG4159

Flip-chip 7

Description

The STG4159 is a high-speed CMOS low voltage single analog SPDT (single pole dual throw) switch or 2:1 multiplexer/demultiplexer switch fabricated in silicon gate C designed to operate from 1.65 V to 4.8 V, making this device ideal for portable applications. It offers low ON-resistance (0.30 Ω) at V SEL inputs are provided to control the switches.

The switch S1 is ON (connected to common port D) when the SEL input is held high and OFF (high impedance state exists between the two ports) when SEL is held low; the switch S2 is ON (it is connected to common port D) when the SEL input is held low and OFF (high impedance state exist between the two ports) when SEL is held high.

Additional key features are fast switching speed, break-before-make delay time and ultra low power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage.

2

MOS technology. It is

= 4.3 V. The

CC

Table 1. Device summary

Order code Package Packaging

STG4159BJR Flip-chip 7 Tape and reel

October 2009 Doc ID 12493 Rev 5 1/18

www.st.com

18

Contents STG4159

Contents

1 Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18 Doc ID 12493 Rev 5

STG4159 Logic diagram

1 Logic diagram

Figure 1. Functional diagram

D

Figure 2. Input equivalent circuit

$N

S1

S2

SEL

N3

N3

3%,

Table 2. Truth table

SEL Switch S1 Switch S2

HONOFF

LOFF

1. High impedance.

!-6

(1)

Doc ID 12493 Rev 5 3/18

ON

Logic diagram STG4159



Figure 3. STG4159 pin connections



"UMPVIEW  4OPVIEW 



 

 







6,

3 

3 

Table 3. Pin assignment

Pin number Symbol Name and function

1 S1 Independent channels

3 S2 Independent channels

4V

5V

6 SEL Control

6##

3%, 

$

'.$

CC



3 

3 

6,

L









Logic supply voltage



$



3%,



6



Positive supply voltage

7 D Common channel

8 GND Ground (0 V)

4/18 Doc ID 12493 Rev 5

STG4159 Maximum rating

2 Maximum rating

Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Table 4. Absolute maximum ratings

Symbol Parameter Value Unit

V

CC

V

IC

V

O

I

IKC

I

IK

I

OK

I

O

I

OP

or I

I

CC

P

T

stg

T

1. Derate above 70 °C by 18.5 mW/C

Supply voltage -0.5 to 5.5 V

Logic supply voltage -0.5 to 5.5 V

L

DC input voltage -0.5 to VCC + 0.5 V

I

DC control input voltage -0.5 to VL + 0.5 V

DC output voltage -0.5 to VCC + 0.5 V

DC input diode current on control pin (V

DC input diode current (V

< 0V) ±50 mA

SEL

DC output diode current ±20 mA

DC output current ±300 mA

DC output current peak (pulse at 1 ms, 10% duty cycle) ±500 mA

DC VCC or ground current ±100 mA

GND

Power dissipation at TA = 70°C

D

(1)

Storage temperature -65 to 150 °C

Lead temperature (10 sec) 260 °C

L

Table 5. Recommended operating conditions

< 0V) -50 mA

500 mW

Symbol Parameter Value Unit

V

CC

V

IC

V

O

T

op

dt/dv Input rise and fall time control input

1. VL pin should not be left floating.

Supply voltage 1.65 to 4.8 V

Logic supply voltage

L

Input voltage 0 to V

I

(1)

1.65 to V

Control input voltage 0 to V

Output voltage 0 to V

Operating temperature -40 to 85 °C

V

= 1.65 V to 2.7 V 0 to 20

L

= 3.0 V to 4.8 V 0 to 10

V

L

CC

L

CC

Doc ID 12493 Rev 5 5/18

V

ns/V

Electrical characteristics STG4159

3 Electrical characteristics

Table 6. DC specifications

Test conditions Value

Symbol Parameter

V

R

ΔR

High level input

IH

voltage

Low level input

IL

voltage

ON resistance

ON

ON resistance match between

ON

channels

(1)

VCC

(V)

1.65 - 4.3

1.8

2.25

3

3.7

4.3

1.8

2.25

3 − 3 −− −

3.7 − 3 −−−

4.3 − 3 −−−

1.8

VL

(V)

1.65 - 1.95 1.25

2.3 - 2.7 1.75

3.0 - 3.6 2.35 −−2.35 −

4.3 2.8 −−2.8 −

1.65 - 1.95

2.3 - 2.7

3.0 - 3.6

4.3

V

= 0 V to V

1.65 - 4.3

S

IS=100mA

V

= 0 V to V

S

IS=100 mA

CC

TA = 25°C -40 to 85°C

Min. Typ. Max. Min. Max.

−−1.25 −

−−1.75 −

−−0.6 − 0.6

−−0.8 − 0.8

−−1.05 − 1.05

−−1.5 − 1.5

− 0.49 0.65 − 0.85

− 0.30 0.40 − 0.50

− 0.25 0.35 − 0.45

− 0.22 0.32 − 0.42

− 0.21 0.30 − 0.40

− 5 −−−

− 3 −−−

− 300 400 − 450

Unit

V

Ω

mΩ

2.5 V

= 0 V to V

S

IS=100 mA

= 0.3 to 4.0

V

S

= 0.3 to 4.0

V

D

= 0.3 to 4.0

V

S

=Open

V

D

= Open

V

S

= 0.3 to 4.0

V

D

ON

I

D

ON resistance flatness

Sn OFF state leakage current

Sn ON state leakage current

D ON state leakage current

(2)

3

3.7

4.3

1.65 - 4.3 1.65 - 4.3

R

FLAT

I

OFF

I

6/18 Doc ID 12493 Rev 5

1.65 - 4.3

− 130 170 − 230

CC

− 90 120 − 170

-30

-20

− 30 -300 300 nA

− 20 -100 100 nA

mΩ