Low-voltage 0.6 Ω typ. single SPDT switch with break-before-make
feature and 15 kV ESD protection
Datasheet − production data
Features
■ Power-off and overvoltage protection
■ Wide operating voltage range:
V
(opr) = 1.65 to 4.5 V
CC
■ Low ON-resistance V
–R
■ Latch-up performance exceeds 300 mA
=0.85Ω (max.) at VCC=4.5V
ON
JESD 17
■ ESD performance tested on (D pin)
– 8 kV IEC-61000-4-2 ESD, contact
discharge
– 15 kV IEC-61000-4-2 ESD, air discharge
■ ESD performance test on all other pins
– 3 kV human body model
– 200 V machine model
(IEC61340-3-2 level M2)
– 1000 V charge device model
(JESD22 C101)
Description
The STG4158 is a high-speed CMOS low-voltage
single analog SPDT (single-pole dual throw)
switch or 2:1 multiplexer/demultiplexer switch
fabricated in silicon gate C
Designed to operate from 1.65 to 4.5 V, this
device is ideal for portable applications.
It offers low ON-resistance (0.6 Ω) at V
(typical T
compatible with 1.8 V, and provides control to the
switches.
= 25 °C). The SEL input threshold is
A
=0V:
IN
2
MOS technology.
=4.5V
CC
Flip Chip6
Wafer
The switch S1 is ON (connected to common port
D) when the SEL input is held high and OFF
(high-impedance state exists between the two
ports) when SEL is held low. The switch S2 is ON
(connected to common port D) when the SEL
input is held low and OFF (high-impedance state
exists between the two ports) when SEL is held
high.
The SEL input has an integrated weak pull-down
resistor to prevent the SEL signal from floating.
For low-power consumption, the SEL input must
be grounded.
The STG4158 features power-off and overvoltage
protection, enabling the device to be isolated
during voltage fault events.
Table 1.Device summary
Order codePackagePacking
STG4158BJRFlip Chip6Tape and reel
JSTG4158-CD1Unsawn wafer
April 2012Doc ID 14140 Rev 21/24
This is information on a product in full production.
Stressing the device above the ratings listed in Table 4: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in Table 5: Recommended
operating conditions of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability. Refer also to the
STMicroelectronics SURE program and other relevant quality documents.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
V
V
V
I
IKC
I
IK
I
OK
I
I
OP
or I
I
CC
P
T
stg
T
1. Derate above 70 °C by 18.5 mW/°C.
Table 5.Recommended operating conditions
Supply voltage-0.5 to 5.5V
DC input voltage-0.5 to VCC +0.5V
I
DC control input voltage-0.5 to 5.5V
IC
DC output voltage-0.5 to VCC +0.5V
O
DC input diode current on control pin (V
DC input diode current (V
<0 V)±50mA
SEL
<0V)-50mA
SEL
DC output diode current± 20mA
DC output current± 300mA
O
DC output current peak (pulse at 1 ms, 10% duty cycle)± 500mA
DC VCC or ground current± 100mA
GND
Power dissipation at TA= 70 °C
D
(1)
500mW
Storage temperature-65 to 150°C
Lead temperature (10 sec.)260°C
L
SymbolParameterValueUnit
V
CC
V
V
V
T
dt/dv
Supply voltage1.65 to 4.5V
Input voltage0 to V
I
Control input voltage0 to V
IC
Output voltage0 to V
O
Operating temperature-40 to 85°C
op
V
= 1.65 to 2.7 V0 to 20
Input rise and fall time control
input
CC
V
= 3.0 to 4.5 V0 to 10
CC
CC
CC
CC
V
V
V
ns/V
Doc ID 14140 Rev 27/24
Electrical characteristicsSTG4158
3 Electrical characteristics
Table 6.DC specifications
Value
SymbolParameterV
1.65 – 1.950.90.9
2.25 – 2.70.90.9
IH
High-level
input voltage
V
1.65 – 1.950.60.6
V
IL
Low-level
input voltage
2.25 – 2.70.60.6
1.65 – 2.20
ON
ON
ONresistance
ONresistance
match
1.65 – 2.20
2.25 – 3.610100
R
ΔR
between
channels
1.65 – 2.20
R
FLAT
ONresistance
flatness
(V)Test condition
CC
Min.Typ.Max.Min.Max.
3.0 – 4.31.01.0
4.51.11.1
3.0 – 4.30.70.7
4.50.70.7
2.03.0
= 0 V to V
V
S
CC
IS= 100 mA
3.7 – 4.50.60.85
40400
V
= 0 V to V
S
CC
IS= 100 mA
3.7 – 4.510100
1.2
= 0 V to V
V
S
CC
IS= 100 mA
3.7 – 4.50.20.4
UnitTA = 25 °C-40 to 85 °C
V
V
Ω2.25 – 3.60.91.3
mΩ
Ω2.25 – 3.60.30.6
SEL pull-
SEL
down
R
1.65 – 4.55000kΩ
resistance
V
=0,
S
V
D=VCC
VS=VCC,
V
=0
D
V
= 0 to V
S
VD= open
I
OFF
I
ON
Sn OFF state
leakage
current
Sn ON state
leakage
current
1.65 – 4.5
1.65 – 4.5
8/24Doc ID 14140 Rev 2
CC
-3030-300300nA
-2020-200200nA
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