Low-voltage 0.6 Ω typ. single SPDT switch with break-before-make
feature and 15 kV ESD protection
Datasheet − production data
Features
■ Power-off and overvoltage protection
■ Wide operating voltage range:
V
(opr) = 1.65 to 4.5 V
CC
■ Low ON-resistance V
–R
■ Latch-up performance exceeds 300 mA
=0.85Ω (max.) at VCC=4.5V
ON
JESD 17
■ ESD performance tested on (D pin)
– 8 kV IEC-61000-4-2 ESD, contact
discharge
– 15 kV IEC-61000-4-2 ESD, air discharge
■ ESD performance test on all other pins
– 3 kV human body model
– 200 V machine model
(IEC61340-3-2 level M2)
– 1000 V charge device model
(JESD22 C101)
Description
The STG4158 is a high-speed CMOS low-voltage
single analog SPDT (single-pole dual throw)
switch or 2:1 multiplexer/demultiplexer switch
fabricated in silicon gate C
Designed to operate from 1.65 to 4.5 V, this
device is ideal for portable applications.
It offers low ON-resistance (0.6 Ω) at V
(typical T
compatible with 1.8 V, and provides control to the
switches.
= 25 °C). The SEL input threshold is
A
=0V:
IN
2
MOS technology.
=4.5V
CC
Flip Chip6
Wafer
The switch S1 is ON (connected to common port
D) when the SEL input is held high and OFF
(high-impedance state exists between the two
ports) when SEL is held low. The switch S2 is ON
(connected to common port D) when the SEL
input is held low and OFF (high-impedance state
exists between the two ports) when SEL is held
high.
The SEL input has an integrated weak pull-down
resistor to prevent the SEL signal from floating.
For low-power consumption, the SEL input must
be grounded.
The STG4158 features power-off and overvoltage
protection, enabling the device to be isolated
during voltage fault events.
Table 1.Device summary
Order codePackagePacking
STG4158BJRFlip Chip6Tape and reel
JSTG4158-CD1Unsawn wafer
April 2012Doc ID 14140 Rev 21/24
This is information on a product in full production.
Stressing the device above the ratings listed in Table 4: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in Table 5: Recommended
operating conditions of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability. Refer also to the
STMicroelectronics SURE program and other relevant quality documents.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
V
V
V
I
IKC
I
IK
I
OK
I
I
OP
or I
I
CC
P
T
stg
T
1. Derate above 70 °C by 18.5 mW/°C.
Table 5.Recommended operating conditions
Supply voltage-0.5 to 5.5V
DC input voltage-0.5 to VCC +0.5V
I
DC control input voltage-0.5 to 5.5V
IC
DC output voltage-0.5 to VCC +0.5V
O
DC input diode current on control pin (V
DC input diode current (V
<0 V)±50mA
SEL
<0V)-50mA
SEL
DC output diode current± 20mA
DC output current± 300mA
O
DC output current peak (pulse at 1 ms, 10% duty cycle)± 500mA
1. OFF-isolation = 20 log10 (VD/VS), VD = output, VS = input to OFF switch.
Doc ID 14140 Rev 211/24
30
80
190
pF
Application informationSTG4158
4 Application information
Power-off and overvoltage protection
The STG4158 has two operation modes:
1.Normal operation mode
2. Isolation mode
In normal operation mode, the switch functions as a normal SPDT, with the SEL pin
that selects the switch to be either ON or OFF. Either S1 or S2 is connected to common
channel D.
In isolation mode, all the switches are OFF. S1 or S2 are isolated from common channel D.
The S1, S2, D ports have a 1 MΩ impedance to ground.
The operation modes are made possible by special detection circuitry that detects the
voltage level at D, S1 and S2 supplies. Depending on these voltage levels, the device goes
into isolation mode or normal operation mode accordingly.
Isolation mode is a feature of the device that is useful during fault conditions that occur in
the application environment.
Table 9.Voltage conditions
V
V
CC
Floating0 – 4.5 VAll switches OFF - S1, S2 and D are isolated from each other.Isolation
0 – 0.5 V0 – 4.5 VAll switches OFF - S1, S2 and D are isolated from each other.Isolation
V
>0.5V
CC
1.65–4.5V0–V
(voltage at common
port D, S1 or S2)
D,S
D, S>VCC
Voltage conditionMode
+ 0.4All switches OFF - S1, S2 and D are isolated from each other.Isolation
CC
Either S1 or S2 is connected to D, depending on SEL input.Normal
Figure 4.Voltage conditions
The SEL input has an integrated weak pull-down resistor R
from floating. For lower power consumption, the SEL input must be grounded.
12/24Doc ID 14140 Rev 2
to prevent the SEL signal
SEL
STG4158Test circuits
5 Test circuits
Figure 5.ON-resistance
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6
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Figure 6.Bandwidth
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Doc ID 14140 Rev 213/24
Test circuitsSTG4158
Figure 7.OFF leakage
6
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6
33
3
).
6
##
Figure 8.Channel-to-channel crosstalk
6
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14/24Doc ID 14140 Rev 2
#36
STG4158Test circuits
Figure 9.OFF isolation
6
##
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Figure 10. Test circuit
05,3%
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3
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).
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2
4
1. CL = 5/35 pF or equivalent: (includes jig capacitance).
= 50 Ω or equivalent.
2. R
L
= Z
3. R
T
of pulse generator (typically 50 Ω).
OUT
Doc ID 14140 Rev 215/24
#
2
,
,
3#6
Test circuitsSTG4158
#3V
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##
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Figure 11. Break-before-make time delay
6
3
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##
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6
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#
,
#3V
Figure 12. Switching time and charge injection
(V
=0V, R
2
'%.
GEN
3
3
6
'%.
=0Ω, RL=1MΩ, CL= 100 pF)
GEN
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Figure 13. Turn-ON, turn-OFF delay time
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16/24Doc ID 14140 Rev 2
STG4158Package mechanical data
6 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Figure 14. Flip Chip6 package outline
1. The terminal pin 1 on the bumps side is identified by a distinguishing feature (for instance by a circular
“clear area” - typically 0.1 mm diameter). The terminal pin 1 on the backside of the product is identified by
a distinguishing feature (for instance by a circular “dot” - typically 0.5 mm diameter).
2. Drawing not to scale.
Doc ID 14140 Rev 217/24
Package mechanical dataSTG4158
Table 10.Flip Chip6 mechanical data
Dimensions (mm.)
Symbol
Min.Typ.Max.
A0.5450.60.655
A10.170.20.23
A20.3750.40.425
b0.230.2550.28
D0.8130.8280.843
D10.390.40.41
E1.2131.2281.243
E10.790.80.81
e0.360.40.44
f0.2040.2140.224
ccc0.05
Figure 15. Footprint recommendation
Grid placement area
Figure 16. Flip Chip6 marking
0.40
B
A
123
158
0.80
0.40
0.22
18/24Doc ID 14140 Rev 2
STG4158Package mechanical data
Figure 17. Flip Chip6 tape specification
1. All dimensions in mm.
Doc ID 14140 Rev 219/24
Package mechanical dataSTG4158
Figure 18. Flip Chip6 reel information
1. Material properties:
1) Antistatic (white or blue).
2) Conductive (black).
20/24Doc ID 14140 Rev 2
STG4158Die description
7 Die description
Product JSTG4158-CD1
●Wafer size: 203 mm (8 inches)
●Wafer thickness: 725 μm + 20 μm
●Die identification: UP98A.
Die layout
●Design die size (X x Y): 1128 x 728 μm
●Scribe line: 100 x 100 μm
●Stepping die size: 1228 x 828 μm
●Pad opening: 184 x 184 μm
●DI: die identification (at the position shown in Figure 19)
●Pads: pad contact (at the position shown in Figure 19 and Ta b le 1 1 ).
Figure 19. JSTG4158-CD1 die plot
Refer to Tab le 1 1 for the pad locations.
Doc ID 14140 Rev 221/24
Die descriptionSTG4158
Table 11.Pad information
Pad functionX (μm)Y(μm)
S1-400200
GND0200
S2400200
V
CC
400-200
D0-200
SEL-400-200
Pad locations are measured relative to the die center (where X and Y are the horizontal and
vertical axis, respectively, measured in μm). Refer to Figure 19.
22/24Doc ID 14140 Rev 2
STG4158Revision history
8 Revision history
Table 12.Document revision history
DateRevisionChanges
12-Nov-20071Initial release
24-Apr-20122
Added wafer JSTG4158-CD1, Section 7: Die description, updated
Ta b le 1 , Section 2: Maximum rating, ECOPACK
Figure 18 and Disclaimer, minor text corrections throughout
document.
®
, Figure 17,
Doc ID 14140 Rev 223/24
STG4158
y
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