tPD = 0.3ns (TYP.) at VCC = 3.0V
tPD = 0.4ns (TYP.) at VCC = 2.3V
■ ULTRA LOW POWER DISSIPATION:
ICC = 0.2µA (MAX.) at TA = 85°C
■ LOW "ON" RESISTANCE V
IN
=0V:
RON = 0.5Ω (MAX. TA = 25°C) at VCC = 2.7V
RON = 0.8Ω (MAX. TA = 25°C) at VCC = 2.3V
RON = 3.0Ω (MAX. TA = 25°C) at VCC = 1.8V
■ WIDE OPERATING VOLTAGE RANGE:
VCC (OPR) = 1.65V to 4.3V SINGLE SUPPLY
■ 4.3V TOLERANT AND 1.8V COMPATIBLE
THRESHOLD ON DIGITAL CONTROL INPUT
at V
= 2.3 to 3.0V
CC
■ LA TCH-UP PERFORMANCE EXCEEDS
300mA (JESD 17)
■ ESD PERFORM. (ANALOG CHAN. vs GND):
HBM > 7KV (MIL STD 883 method 3015)
DESCRIPTION
The STG3699 is an high-speed CMOS LOW
VOLTAGE QUAD ANAL O G S.P.D.T. (Single Pole
Dual Throw) SWITCH or 2:1 Multiplexer/
Demultiplexer Switch fabricated in silicon gate
2
C
MOS technology. It is designed to operate from
1.65V to 4.3V, making this device ideal for
portable applications.
It offers very low ON-Resistance (<0.5Ω) at
V
=3.0V. The nIN inputs are provided to cont rol
CC
the switches. The sw itches nS1 are O N (they are
QFNTSSOP
Table 1: Order Codes
PACKAGET & R
TSSOPSTG3699TTR
QFNSTG3699QTR
connected to common Ports Dn) when the nIN
input is held high and OFF (high imp edance state
exists between the two ports) when nIN is held
low; the switches nS2 are ON (they are connected
to common Ports Dn) when the nI N input is held
low and OFF (high impedance state exists
between the two ports) when IN is held high.
Additional key f eatures are fast switch ing speed,
Break Before Make Delay Time and Ultra Low
Power Consumption. All inputs and outputs are
equipped with protection circuits against static
discharge, giving them ESD immunity and
transient excess voltage. It’s available in the
commercial temperature range in TSSOP and
QFN3x3mm package.
Figure 1: Pin Con nection
Rev. 5
1/12August 2005
STG3699
Figure 2: Input E quivalen t Circuit Table 2: Pin Description
(1)
TSSOP
PIN N°
1, 5, 9, 13,
3, 7, 11, 15
(1)
QFN
PIN N°
15, 3, 7, 11,
1, 5, 9, 13
SYMBOL
1S1 to 4S1,
1S2 to 4S2
NAME AND
FUNCTION
Independent
Channels
2, 6, 10, 14 16, 4, 8, 12D1 to D4Common
Channels
4, 122, 101-2IN, 3-4IN Controls
1614V
CC
Positive Supply Voltage
86GNDGround (0V)
1. Exposed pad must be soldered to a floating plane. Do NOT connect to power or ground.
Table 3: Truth Table
INSWITCH S1SWITCH S2
HON
L
1. High Impedance
OFF
(1)
OFF
Table 4: Absolute Maximum Ratings
SymbolParameterValueUnit
V
V
V
V
I
IKC
I
I
OK
I
I
OP
ICC or I
P
T
T
Supply Voltage
CC
DC Input Voltage-0.5 to VCC + 0.5
I
DC Control Input Voltage
IC
DC Output Voltage-0.5 to VCC + 0.5
O
DC Input Diode Current on control pin (VIN< 0V)
DC Input Diode Current (VIN< 0V)
IK
DC Output Diode Current
DC Output Current
O
DC Output Current Peak (pulse at 1ms, 10% duty cycle)
DC VCC or Ground Current
GND
Power Dissipation at Ta=70°C (1)QFN 1120mW
D
-0.5 to 4.6V
-0.5 to 4.6V
− 50mA
± 50mA
± 20mA
± 300mA
± 500mA
± 100mA
TSSOP500mW
Storage Temperature
stg
Lead Temperature (10 sec)
L
-65 to 150°C
300°C
(1)
ON
V
V
Absolute Maximum Ratings are t hose values beyond whic h dam age to the de vi ce may occu r. F unctional operation under these co ndi t i ons
not implied.
(1) Derate above 70° C: by 18.5mW/° C for QFN pack age; by 5.6mW /° C f or TSSOP.
Table 5: Recommended Operating Conditions
SymbolParameterValueUnit
V
V
V
V
T
dt/dv
1) Truth T abl e guarante ed: 1.2V to 4.3V.
2/12
Supply Voltage (note 1)
CC
Input Voltage0 to V
I
Control Input Voltage
IC
Output Voltage0 to V
O
Operating Temperature
op
Input Rise and Fall Time Control Input VCC= 1.65V to 2.7V
VCC= 3.0V to 4.3V
1.65 to 4.3V
CC
0 to 4.3V
CC
-55 to 125°C
0 to 20
0 to 10
ns/V
V
V
Table 6: DC Specifications
Test ConditionsValue
STG3699
SymbolParameter
V
High Level
IH
Input Voltage
V
Low Level
IL
Input Voltage
R
Switch ON
ON
Resistance
(1)
∆R
ON
ON
Resistance
Match
between
channels
(1,2)
R
FLAT
ON
Resistance
FLATNESS
(3)
I
OFF State
OFF
Leakage
Current
(nSn), (Dn)
I
Input
IN
Leakage
Current
I
Quiescent
CC
Supply
Current (1)
V
CC
(V)
Min.Typ.Max.Min.Max.Min.Max.
1.65-1.950.65V
2.3-2.5
2.7-3.0
1.41.41.4
1.41.41.4
3.31.5
3.6
4.3
1.71.71.7
2.22.22.2
TA = 25°C
CC
-40 to 85°C-55 to 125°C
0.65V
CC
0.65V
CC
1.51.5
1.65-1.950.400.400.40
2.3-2.5
2.7-3.0
0.500.500.50
0.500.500.50
3.30.500.500.50
3.6
4.3
4.3
0.400.500.60
0.500.500.50
1.31.31.3
3.00.400.500.60
VS=0V to V
2.70.400.500.60
2.30.500.800.80
IS=100mA
CC
1.80.703.04.0
1.650.803.04.0
2.7
VS=1.5V
I
=100mA
S
0.06Ω
4.3
3.0
2.70.070.150.15
VS=1.5V
I
=100mA
S
2.3
1.65VS=0.8V
I
=100mA
S
4.3
VS=0.3 or 4V±10± 100nA
0 - 4.3VIN= 0 to 4.3V±0.1± 1µA
1.65-4.3VIN=VCC or
±0.05±0.2±1µA
GND
Unit
V
V
Ω
Ω
Note 1: Guaranteed by design
Note 2: ∆RON = R
Note 3: Flatness is defi ned as the dif fe rence betwe en the maximu m and m i ni m um value of on-resista nc e as measured over the specified
analog signal ranges.