ST STF817, STN817 User Manual

STF817

®

STF817

STN817

PNP MEDIUM POWER TRANSISTORS

	Type	Marking
	STF817	817
	STN817	N817
■	SURFACE-MOUNTING DEVICES IN		2
	MEDIUM POWER SOT-223 AND SOT-89
	PACKAGES			3
■ AVAILABLE IN TAPE & REEL PACKING
				2
			1
APPLICATIONS
■	VOLTAGE REGULATION		SOT-223	SOT-89
■	RELAY DRIVER
■	GENERIC SWITCH

DECRIPTION

The STF817 and STN817 are PNP transistors manufactured using Planar Technology resulting in rugged high performance devices.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter		Value			Unit
		Devices	STN817		STF817
		Packages	SOT-223		SOT-89
VCBO	Collector-Base Voltage (IE = 0)		-120			V
VCEO	Collector-Emitter Voltage (IB = 0)		-80			V
VEBO	Emitter-Base Voltage (IC = 0)		-5			V
IC	Collector Current		-1.5			A
ICM	Collector Peak Current (tp < 5 ms)		-2			A
IB	Base Current		-0.3			A
IBM	Base Peak Current (tp < 5 ms)		-0.6			A
Ptot	Total Dissipation at Tc = 25 oC		1.6		1.4	W
Tstg	Storage Temperature		-65 to 150			oC
Tj	Max. Operating Junction Temperature		150			oC

April 2002	1/5

STF817 - STN817

THERMAL DATA

			SOT-223	SOT-89
Rthj-amb ∙ Thermal Resistance Junction-ambient		Max	78	89	oC/W

∙ Device mounted on a PCB area of 1 cm2.

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol	Parameter	Test Conditions		Min. Typ. Max.	Unit
ICES	Collector Cut-off	VCE = -120 V		-500	μA
	Current (VBE = 0)
ICEO	Collector Cut-off	VCE = -80 V		-1	mA
	Current (IB = 0)
IEBO	Emitter Cut-off Current	VEB = -5 V		-100	μA
	(IC = 0)
VCEO(sus)	Collector-Emitter	IC = -10 mA		-80	V
	Sustaining Voltage
	(IB = 0)
VCE(sat)	Collector-Emitter	IC = -100 mA	IB = -10 mA	-0.25	V
	Saturation Voltage	IC = -1 A	IB = -100 mA	-0.5	V
VBE(sat)	Base-Emitter	IC = -100 mA	IB = -10 mA	-1	V
	Saturation Voltage	IC = -1 A	IB = -100 mA	-1.1	V
hFE	DC Current Gain	IC = -100 mA	VCE = -2 V	140
		IC = -500 mA	VCE = -2 V	80
		IC = -1 A	VCE = -2 V	40
fT	Transition Frequency	IC = -0.1 A	VCE = -10 V	50	MHz

Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %

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