ST STD7NM50N, STD7NM50N-1, STF7NM50N, STP7NM50N User Manual
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April 2007 Rev 1 1/17
17
STD7NM50N - STD7NM50N-1
STF7NM50N - STP7NM50N
N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK
Second generation MDmesh™ Power MOSFET
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
This device is realized with the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company’s strip layout to yield one
of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters
Application
■ Switching application
Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
STD7NM50N 550V <0.78Ω 5A
STD7NM50N-1 550V <0.78Ω 5A
STF7NM50N 550V <0.78Ω 5A
(1)
1. Limited only by maximum temperature allowed
STP7NM50N 550V <0.78Ω 5A
1
2
3
TO-220
DPAK
IPAK
3
2
1
1
2
3
TO-220FP
1
3
www.st.com
Order codes
Part number Marking Package Packaging
STD7NM50N-1 D7NM50N IPAK Tube
STD7NM50N D7NM50N DPAK Tape & reel
STF7NM50N F7NM50N TO-220FP Tube
STP7NM50N P7NM50N TO-220 Tube
Contents STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
2/17
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N Electrical ratings
3/17
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 / DP AK
IPAK
TO-220FP
V
DS
Drain-source voltage (V
GS
=0)
500 V
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25°C
5
5
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
= 100°C
3
3
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 20
20
(1)
A
P
TOT
Total dissipation at T
C
= 25°C
45 20 W
dv/dt
(3)
3. I
SD
≤ 5A, di/dt ≤ 400A/µs, V
DD
=80% V
(BR)DSS
Peak diode recovery voltage slope 15 V/ns
V
ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;T
C
=25°C)
-- 2500 V
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 2. Thermal data
Symbol Parameter
Max value
Unit
TO-220 / DP AK
IPAK
TO-220FP
Rthj-case Thermal resistance junction-case max 2.78 6.25 °C/W
Rthj-amb Thermal resistance junction-amb max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
I
AS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
2A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, I
D
=I
AS
, V
DD
= 50V)
100 mJ
Electrical characteristics STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
4/17
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min Typ Max Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1mA, V
GS
= 0
500 V
dv/dt
(1)
1. Characteristics value at turn off on inductive load
Drain-source voltage slope
Vdd = 400V, Id = 5A,
Vgs = 10V
40 V/ns
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,Tc = 125°C
1
100
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
234V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
=2.5A
0.70 0.78 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
V
DS
=15V, I
D
= 2.5A
4S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 50V, f =1 MHz, V
GS
= 0
400
35
4
pF
pF
pF
C
oss eq.
(2)
2. C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
= 0V, V
DS
= 0V to 400V 67 pF
Rg Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
Open drain
6 Ω
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400V, I
D
= 5A
V
GS
= 10V
(see Figure 16)
12
2
6
nC
nC
nC
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N Electrical characteristics
5/17
Table 6. Switching times
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 250V, I
D
= 2.5A,
R
G
= 4.7Ω, V
GS
= 10V
(see Figure 15)
7
5
40
9
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter T est conditions Min Typ Max Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
5
20
A
A
V
SD
(2)
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 5A, V
GS
= 0
1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=5A, di/dt =100A/µs,
V
DD
=100V, Tj=25°C
(see Figure 17)
250
2
13
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=5A, di/dt =100A/µs,
V
DD
=100V, Tj=150°C
(see Figure 17)
330
2
13
ns
µC
A
Electrical characteristics STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
6/17
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220 /
DPAK / IPAK
Figure 2. Thermal impedance for TO-220 /
DPAK / IPAK
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characteristics Figure 6. Transfer characteristics
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