ST STF724, STN724 User Manual

STF724

STF724

STN724

NPN MEDIUM POWER TRANSISTORS

Features

■SURFACE MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGE

■AVAILABLE IN TAPE & REEL PACKING

■IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE

Applications

■VOLTAGE REGULATION

■RELAY DRIVER

■GENERIC SWITCH

Description

2

3

2

1

SOT-223 SOT-89

Internal Schematic Diagram

The STF724 and STN724 are PNP transistors manufactured using planar Technology resulting in rugged high performance devices.

Order codes

Part Number	Marking	Package	Packing
STF724	724	SOT-89	Tape & reel
STN724	N724	SOT-223	Tape & reel

	Rev 1
October 2005	1/10

www.st.com

1 Absolute Maximum Ratings						STF724 - STN724
1		Absolute Maximum Ratings
	Table 1.		Absolute Maximum Rating
	Symbol		Parameter		Value				Unit
					STF724			STN724
	VCBO		Collector-Base Voltage (IE = 0)			60			V
	VCEO		Collector-Emitter Voltage (IB = 0)			30			V
	VEBO		Collector-Base Voltage (IC = 0)			5			V
	IC		Collector Current			3			A
	ICM		Collector Peak Current (tP < 5ms)			6			A
	IB		Base Current			1			A
	IBM		Base Peak Current (tP < 5ms)			2			A
	PTOT		Total dissipation at Tc = 25°C		1.4		1.6		W
	TSTG		Storage Temperature		-65 to 150				°C
	TJ		Max. Operating Junction Temperature			150
	Table 2.		Thermal Data
	Symbol		Parameter		Value				Unit
					SOT-89			SOT-223
	Rthj-amb		Thermal Resistance Junction-Amb	Max	89			78	°C/W
	Note: 1

Note: 1 Device mounted on a PCB area of 1 cm2.

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STF724 - STN724	2 Electrical Characteristics

2 Electrical Characteristics

Table 3.	Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ICES	Collector Cut-off Current	VCE = 60V				10	μA
	(VBE = 0)
ICEO	Collector Cut-off Current	VCE = 30V				100	μA
	(IB = 0)
IEBO	Emitter Cut-off Current	VEB = 5V				10	μA
	(IC = 0)
V(BR)CBO	Collector-Base	IC = 100μA		60			V
	Breakdown Voltage (IE = 0)
V(BR)CEO	Collector-Emitter Breakdown	IC = 10 mA		30			V
Note 2	Voltage (IB = 0)
V(BR)EBO	Collector-Emitter Breakdown	IE = 100 μA		5			V
	Voltage (IC = 0)
VCE(sat)	Collector-Emitter Saturation	IC = 1 A	IB = 50 mA			0.4	V
Note 2		IC = 2 A	IB = 100 mA			0.7	V
	Voltage
		IC = 3 A	IB = 150 mA			1.1	V
VBE(sat)	Base-Emitter Saturation Voltage	IC = 2 A	IB = 100 mA			1.2	V
Note 2
		IC = 100 mA	VCE = 2 V	100
hFE	DC Current Gain	IC = 1 A	VCE = 2 V	80		300
		IC = 3 A	VCE = 2 V	30
fT	Transistor Frequency	VCE = 10 V	Ic= 0.1 A		100		MHz

2 Pulsed duration = 300 μs, duty cycle ≤1.5%.

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