ST STP6NK70Z, STF6NK70Z User Manual

STF6NK70Z

STP6NK70Z

STF6NK70Z

N-CHANNEL 700V - 1.5Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET

Table 1: General Features

Figure 1: Package

TYPE	VDSS	RDS(on)	ID	Pw
STP6NK70Z	700 V	< 1.8 Ω	5 A	110 W
STF6NK70Z	700 V	< 1.8 Ω	5 A (*)	30 W

■TYPICAL RDS(on) = 1.5 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■IMPROVED ESD CAPABILITY

■100% AVALANCHE RATED

■GATE CHARGE MINIMIZED

■VERY LOW INTRINSIC CAPACITANCES

■VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

Table 2: Order Codes

	3
2	3
1	2
	1
TO-220	TO-220FP

Figure 2: Internal Schematic Diagram

SALES TYPE	MARKING	PACKAGE	PACKAGING
STP6NK70Z	P6NK70Z	TO-220	TUBE
STF6NK70Z	F6NK70Z	TO-220FP	TUBE

Rev. 3

September 2005

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Table 3: Absolute Maximum ratings

Symbol	Parameter		Value		Unit
		STP6NK70Z		STF6NK70Z
VDS	Drain-source Voltage (VGS = 0)		700		V
VDGR	Drain-gate Voltage (RGS = 20 kΩ )		700		V
VGS	Gatesource Voltage		± 30		V
ID	Drain Current (continuous) at TC = 25°C	5		5 (*)	A
ID	Drain Current (continuous) at TC = 100°C	3.15		3.15 (*)	A
IDM ( )	Drain Current (pulsed)	20		20 (*)	A
PTOT	Total Dissipation at TC = 25°C	110		30	W
	Derating Factor	0.87		0.24	W/°C
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)		4000		V
dv/dt (1)	Peak Diode Recovery voltage slope		4.5		V/ns
VISO	Insulation Withstand Voltage (DC)	-		2500	V
Tj	Operating Junction Temperature		-55 to 150		°C
Tstg	Storage Temperature		-55 to 150		°C

( ) Pulse width limited by safe operating area

(1) ISD ≤ 5A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

Table 4: Thermal Data

		TO-220		TO-220FP
Rthj-case	Thermal Resistance Junction-case Max	1.14		4.2	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max		62.5		°C/W
Tl	Maximum Lead Temperature For Soldering Purpose		300		°C

Table 5: Avalanche Characteristics

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	5	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	200	mJ
	(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Table 6: Gate-Source Zener Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
BVGSO	Gate-Source Breakdown	Igs=± 1mA (Open Drain)	30			V
	Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.

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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 7: On /Off

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source Breakdown	ID = 1 mA, VGS = 0	700			V
	Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125°C			50	µA
IGSS	Gate-body Leakage	VGS = ± 20 V			± 10	µA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 100 µA	3	3.75	4.5	V
RDS(on	Static Drain-source On	VGS = 10 V, ID = 2.5 A		1.5	1.8	Ω
	Resistance

Table 8: Dynamic

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS = 15 V , ID = 2.5 A		4.4		S
Ciss	Input Capacitance	VDS = 25 V, f = 1 MHz, VGS = 0		930		pF
Coss	Output Capacitance			105		pF
Crss	Reverse Transfer			22		pF
	Capacitance
COSS eq (3).	Equivalent Output	VGS = 0 V, VDS = 0 to 560 V		70		pF
	Capacitance
td(on)	Turn-on Delay Time	VDD = 350 V, ID = 2.5 A,		17		ns
tr	Rise Time	RG = 4.7 Ω, VGS = 10 V		18		ns
td(off)	Turn-off-Delay Time	(see Figure 17)		45		ns
tf	Fall Time			30		ns
Qg	Total Gate Charge	VDD = 560 V, ID = 5 A,		34	47	nC
Qgs	Gate-Source Charge	VGS = 10 V		6.5		nC
Qgd	Gate-Drain Charge	(see Figure 20)		17		nC

Table 9: Source Drain Diode

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					5	A
ISDM (2)	Source-drain Current (pulsed)					20	A
VSD (1)	Forward On Voltage	ISD = 5	A, VGS = 0			1.6	V
trr	Reverse Recovery Time	ISD = 5	A, di/dt = 100 A/µs		432		ns
Qrr	Reverse Recovery Charge	VDD = 35V			2.37		µC
IRRM	Reverse Recovery Current	(see Figure 18)			11		A
trr	Reverse Recovery Time	ISD = 5	A, di/dt = 100 A/µs		588		ns
Qrr	Reverse Recovery Charge	VDD = 35V, Tj = 150°C			3.38		µC
IRRM	Reverse Recovery Current	(see Figure 18)			11.5		A

(1)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2)Pulse width limited by safe operating area.

(3)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

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Figure 3: Safe Operating Area

Figure 6: Thermal Impedance

Figure 4: Safe Operating Area for TO-220FP

Figure 7: Thermal Impedance for TO-220FP

Figure 5: Output Characteristics		Figure 8: Transfer Characteristics

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