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STF40NF06
N-CHANNEL 60V - 0.024Ω - 23A - TO-220FP
STripFET™II MOSFET
Table 1: Ge neral Features
TYPE V
STF40NF06 60 V < 0.028 Ω 23 A
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE AT 100°C
■ APPLICATION ORIENTED
DSS
(on) = 0.024Ω
DS
R
DS(on)
I
D
CHARACTERIZATION
■ 100% AVALANCHE TESTED
DESCRIPTION
This MOSFET is th e latest developm ent of STM icroelectronics unique “Single Feature Size
™”
strip-based process. The resulting transistor
shows extremely high pac king density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
Figure 1: Package
3
2
1
TO-220FP
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
Part Number Marking Package Packaging
STF40NF06 F40NF06 TO-220FP TUBE
Rev.2
1/9November 2004
STF40NF06
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 10 V/ns
E
AS
V
ISO
T
stg
T
j
(1) ISD ≤ 40A, di/dt ≤ 300A/µs, VDD ≤ V
(2) Starting T
) Pulse wi dt h l i m i ted by safe operating area
(
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
()
Drain Current (pulsed) 92 A
Total Dissipation at TC = 25°C
23 A
16 A
30 W
Derating Factor 0.2 W/°C
(2)
Single Pulse Avalanche Energy 250 mJ
Insulation Withstand Voltage (DC) 2500 V
Storage Temperature
Operating Junction Temperature
=25°C, ID=20A, VDD=30V
j
(BR)DSS
, Tj ≤ T
JMAX.
.
–55 to 175 °C
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max 5.0 °C/W
T
l
ELECTRICAL CHARACTERISTICS (T
Maximum Lead Temperature For Soldering Purpose 275 °C
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA, VGS = 0 60 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leaka ge
Current (V
DS
= 0)
V
= Max Rating
= 0)
DS
VDS= Max Rating, TC= 125°C
V
= ± 20V ±100 nA
GS
1µA
10 µA
Table 6: On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS, ID = 250µA
DS
24V
VGS = 10V, ID = 11.5 A 0.024 0.028 Ω
2/9
STF40NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 30 V
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
ID
= 25V, f = 1 MHz, VGS = 0 920
Table 8: Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 30V, ID = 20A
R
=4.7Ω VGS = 10V
G
(see Figure 16)
VDD = 48V, ID = 10A,
VGS = 10V
=11.5A 12 S
225
80
27
11
32
43 nC
6.5
15
pF
pF
pF
ns
ns
nC
nC
Table 9: Switching Off
Symbol Paramet er Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off-Delay Time
t
f
Fall Time
VDD = 30V, ID = 20A,
RG=4.7Ω, V
GS
= 10V
27
11
(see Figure 16)
Table 10: Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
(2)
SDM
VSD (1)
t
rr
Q
rr
I
RRM
(1) Pulsed: Pulse du rat i on = 300 µs, duty cycle 1. 5 %.
(2) Pulse width limited by safe operating area.
Source-drain Current 23 A
Source-drain Current (pulsed) 92 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 23A, VGS = 0
= 40A, di/dt = 100A/µs,
I
SD
V
= 10V, Tj = 150°C
DD
(see test circuit, Figure 5)
1.3 V
63
150
4.8
ns
ns
ns
nC
A
3/9
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