ST STF40NF06 User Manual

STF40NF06

STF40NF06

N-CHANNEL 60V - 0.024Ω - 23A - TO-220FP

STripFET™II MOSFET

Table 1: General Features

TYPE	VDSS	RDS(on)	ID
STF40NF06	60 V	< 0.028 Ω	23 A

■TYPICAL RDS(on) = 0.024Ω

■EXCEPTIONAL dv/dt CAPABILITY

■LOW GATE CHARGE AT 100°C

■APPLICATION ORIENTED CHARACTERIZATION

■100% AVALANCHE TESTED

DESCRIPTION

This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■DC-DC & DC-AC CONVERTERS

■MOTOR CONTROL, AUDIO AMPLIFIERS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SOLENOID AND RELAY DRIVERS

Figure 1: Package

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TO-220FP

Figure 2: Internal Schematic Diagram

Table 2: Order Codes

Part Number	Marking	Package	Packaging
STF40NF06	F40NF06	TO-220FP	TUBE

Rev.2

November 2004

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Table 3: Absolute Maximum ratings

	Symbol	Parameter	Value	Unit
	VDS	Drain-source Voltage (VGS = 0)	60	V
	VDGR	Drain-gate Voltage (RGS = 20 kΩ )	60	V
	VGS	Gatesource Voltage	± 20	V
	ID	Drain Current (continuous) at TC = 25°C	23	A
	ID	Drain Current (continuous) at TC = 100°C	16	A
	IDM ( )	Drain Current (pulsed)	92	A
	PTOT	Total Dissipation at TC = 25°C	30	W
		Derating Factor	0.2	W/°C
	dv/dt (1)	Peak Diode Recovery voltage slope	10	V/ns
	EAS (2)	Single Pulse Avalanche Energy	250	mJ
	VISO	Insulation Withstand Voltage (DC)	2500	V
	Tstg	Storage Temperature	–55 to 175	°C
	Tj	Operating Junction Temperature

(1)ISD ≤ 40A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX..

(2)Starting Tj=25°C, ID=20A, VDD=30V

( ) Pulse width limited by safe operating area

Table 4: Thermal Data

Rthj-case	Thermal Resistance Junction-case Max	5.0	°C/W
Tl	Maximum Lead Temperature For Soldering Purpose	275	°C

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: Off

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	60			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS= Max Rating, TC= 125°C			10	µA
IGSS	Gate-body Leakage	VGS = ± 20V			±100	nA
	Current (VDS = 0)

Table 6: On

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250µA	2		4	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 11.5 A		0.024	0.028	Ω
	Resistance

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ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS = 30 V	ID =11.5A		12		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0			920		pF
Coss	Output Capacitance				225		pF
Crss	Reverse Transfer				80		pF
	Capacitance

Table 8: Switching On

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 30V, ID = 20A		27		ns
tr	Rise Time	RG = 4.7Ω VGS = 10V		11		ns
		(see Figure 16)
Qg	Total Gate Charge	VDD = 48V, ID = 10A,		32	43	nC
Qgs	Gate-Source Charge	VGS = 10V		6.5		nC
Qgd	Gate-Drain Charge			15		nC

Table 9: Switching Off

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(off)	Turn-off-Delay Time	VDD = 30V, ID = 20A,		27		ns
tf	Fall Time	RG=4.7Ω, VGS = 10V		11		ns
		(see Figure 16)

Table 10: Source Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
ISD	Source-drain Current				23	A
ISDM (2)	Source-drain Current (pulsed)				92	A
VSD (1)	Forward On Voltage	ISD = 23A, VGS = 0			1.3	V
trr	Reverse Recovery Time	ISD = 40A, di/dt = 100A/µs,		63		ns
Qrr	Reverse Recovery Charge	VDD = 10V, Tj = 150°C		150		nC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)		4.8		A

(1)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2)Pulse width limited by safe operating area.

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