ST STP3NK80Z, STF3NK80Z, STD3NK80Z, STD3NK80Z-1 User Manual
查询STD3NK80Z供应商
N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK
STP3NK80Z - STF3NK80Z
STD3NK80Z - STD3NK80Z-1
Zener-Protected SuperMESH™ Power MOSFET
TYPE V
STP3NK80Z
STF3NK80Z
STD3NK80Z
STD3NK80Z-1
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
800 V
800 V
800 V
800 V
(on) = 3.8 Ω
DS
DSS
R
DS(on)
< 4.5 Ω
< 4.5 Ω
< 4.5 Ω
< 4.5 Ω
I
D
2.5 A
2.5 A
2.5 A
2.5 A
Pw
70 W
25 W
70 W
70 W
REPEATIBILITY
DESCRIPTION
The SuperMESH ™ series is obtained through an
extreme optimi za tio n of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range o f high voltage MOSFETs including revolutionary MDmesh™ products.
3
2
TO-220
DPAK
1
TO-220FP
3
1
IPAK
INTERNAL SCHEMATIC D IAGRAM
3
2
1
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP3NK80Z P3NK80Z TO-220 TUBE
STF3NK80Z F3NK80Z TO-220FP TUBE
STD3NK80ZT4 D3NK80Z DPAK TAPE & REEL
STD3NK80Z-1 D3NK80Z IPAK TUBE
1/13September 2003
STP3NK80Z - STF3NK80Z - STD 3NK80Z - STD3NK80Z-1
ABSOLUTE MAX IMUM RATINGS
Symbol Parameter Value Unit
STP3NK80Z STF3NK80Z
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
800 V
800 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 10 10 (*) 10 A
Total Dissipation at TC= 25°C
2.5 2.5 (*) 2.5 A
1.57 1.57 (*) 1.57 A
70 25 70 W
Derating Factor 0.56 0.2 0.56 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2KV
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
≤ 2.5A, di/dt ≤ 200 A/µs, VDD≤ V
(1) I
SD
(*) Limited only bymaximum temp erature allowed
Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55to150 °C
STD3NK80Z
STD3NK80Z-1
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.78 5 1.78 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
DPAK
IPAK
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
2.5 A
170 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-SourceBreakdown
Igs= ± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEA TURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been des igned t o enhance not only the dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to sourc e. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of ex ternal components.
2/13
STP3NK80Z - STF3NK80Z - STD 3NK80Z - STD3NK80Z-1
ELECTRICAL CHARACTE RISTICS (T
=25°C UNLES S OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1mA,VGS= 0 800 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
=50µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 1.25 A 3.8 4.5 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 1.25 A 2.1 S
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
Capacitance
t
d(on)
t
d(off)
Q
Q
Q
t
r
t
f
g
gs
gd
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
=25V,f=1MHz,VGS= 0 485
V
DS
57
11
VGS=0V,VDS= 0V to 640V 22 pF
=400V,ID= 1.25 A
V
DD
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
17
27
36
40
=640V,ID= 2.5 A,
V
DD
VGS=10V
19
3.2
10.8
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
SOURCE DR AIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD= 2.5 A, VGS=0
I
SD
VDD=50V,Tj= 25°C
(see test circuit, Figure 5)
I
SD
V
DD
(see test circuit, Figure 5)
= 2.5 A, di/dt = 100 A/µs
= 2.5 A, di/dt = 100 A/µs
=50V,Tj= 150°C
384
1600
8.4
474
2100
8.8
when VDSincreases from 0 to 80%
oss
2.5
10
1.6 V
A
A
ns
nC
A
ns
nC
A
3/13
STP3NK80Z - STF3NK80Z - STD 3NK80Z - STD3NK80Z-1
Safe O perating Area For T O-220/ DP AK/ IPAK
Thermal Impedance For TO-220/DPAK/IPAK
Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP
4/13
Transfer CharacteristicsOutput Characteristics
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