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查询STF2222A供应商
®
SMALL SIGNAL NPN TRANSISTOR
Type Marking
STF2222A 20F
■ SILICON EPI TAX IA L PLANAR N PN
TRANSISTOR
■ MINIATURE SOT- 89 PLAS TIC PA CKA GE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE & REEL PA C K ING
■ THE PNP COMPLEMENTARY TYPE IS
STF2907A
APPLICATIONS
■ WELL SUITABLE FOR PORT AB LE
EQUIPME NT
■ SMALL LOAD SW ITCH TR A NS IS TOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
STF2222A
PRELIMINARY DATA
SOT-89
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Emitter Voltage (IE = 0) 75 V
CBO
Collector-Emitter Voltage (IB = 0) 40 V
CEO
Emitter-Base Voltage (IC = 0) 6 V
EBO
Collector Current 0.6 A
I
C
Collector Peak Current (tp < 5 ms) 0.8 A
CM
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
= 25 oC 1.2 W
amb
o
C
o
C
February 2003
1/5
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STF2222A
THERMAL DATA
R
• Device mounted on a PCB area of 1 cm2 .
• Thermal Resistance Junction-Ambient Max 104.1
thj-amb
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
BEX
I
CBO
I
EBO
V
(BR)CEO
Collector Cut-off
Current (V
= -3 V)
BE
Base Cut-off Current
(V
= -3 V)
BE
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 60 V 10 nA
V
CE
= 60 V 20 nA
V
CE
= 75 V
V
CB
V
= 75 V Tj = 150
CB
= 3 V 15 nA
V
EB
= 10 mA 40 V
I
C
o
C
10
10
Breakdown Voltage
(I
= 0)
B
V
(BR)CBO
Collector-Base
= 10 µA
I
C
75 V
Breakdown Voltage
(I
= 0)
E
V
(BR)EBO
Emitter-Base
= 10 µA
I
E
6V
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Collector-Base
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 0.1 mA VCE = 10 V
FE
f
C
CBO
Transition Frequency IC = 20 mA VCE = 20V f = 100MHz 270 MHz
T
Collector-Base
IC = 150 mA IB = 15 mA
I
= 500 mA IB = 50 mA
C
IC = 150 mA IB = 15 mA
I
= 500 mA IB = 50 mA
C
0.6 1.2
0.3
1
2
35
I
= 1 mA VCE = 10 V
C
I
= 10 mA VCE = 10 V
C
I
= 150 mA VCE = 10 V
C
I
= 150 mA VCE = 1 V
C
I
= 500 mA VCE = 10 V
C
50
75
100
50
40
300
IE = 0 VCB = 10 V f = 1 MHz 4 8 pF
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = 0.5 V f = 1MHz 20 25 pF
Capacitance
NF Noise Figure I
h
∗ Input Impedance VCE = 10 V IC = 1 mA f = 1 KHz
ie
h
∗ Reverse Voltage Ratio VCE = 10 V IC = 1 mA f = 1 KHz
re
= 0.1 mA VCE = 10 V f = 1 KHz
C
∆f = 200 Hz R
V
= 10 V IC = 10 mA f = 1 KHz20.25
CE
V
= 10 V IC = 10 mA f = 1 KHz
CE
= 1 KΩ
G
4dB
8
1.25KΩKΩ
8
4
nA
µA
10
10
V
V
V
V
-4
-4
hfe∗ Small Signal Current
Gain
h
∗ Output Admittance VCE = 10 V IC = 1 mA f = 1 KHz
oe
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
VCE = 10 V IC = 1 mA f = 1 KHz
V
= 10 V IC = 10 mA f = 1 KHz
CE
V
= 10 V IC = 10 mA f = 1 KHz
CE
2/5
50
75
5
25
300
375
35
200
µS
µS