ST STP12PF06, STF12PF06 User Manual
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查询STF12PF06供应商
P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP
TYPE
STP12PF06
STF12PF06
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ APPLICATION ORIENTED
V
DSS
60 V
60 V
(on) = 0.18 Ω
DS
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high p acking density for low onresistance, rugged ava lanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
R
DS(on)
< 0.20 Ω
< 0.20 Ω
I
D
12 A
12 A
STP12PF06
STF12PF06
STripFET™ II POWER MOSFET
Figure 1:PackageTable 1: General Features
2
TO-220 TO-220FP
Figure 2: Internal Schematic Diagram
2
APPLICATIONS
■ MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
Table 2: Order Codes
PART NUMBER MARKING PACKAGE PACKAGING
STP12PF06
STF12PF06
P12PF06
F12PF06
TO-220
TO-220FP
TUBE
TUBE
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP20PF06 STF20PF06
V
DS
V
DGR
V
GS
I
D
I
D
I
(•)
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(•) Pulse width limited by safe operating area.
:For the P-CHANNEL MOSFET actual polarity of voltages
NOTE
and current has to be reversed.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 20 V
Drain Current (conti nuo us ) at TC = 25°C
Drain Current (conti nuo us ) at TC = 100°C
12 8 A
8.4 5.6 A
Drain Current (pulse d) 48 32 A
Total Dissipation at TC = 25°C
60 225 W
Derating Factor 0.4 0.17 W/°C
(1)
Peak Diode Recove ry vo ltag e slo pe 6 V/ns
(2)
Single Pulse Avalanche Energy 200 mJ
Storage Temperature
Operating Junction Temperature
(1) I
≤12A, di/dt ≤200A/µs, VDD ≤ V
SD
(2) Starting Tj = 25 oC, ID = 12A, VDD= 25V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX
Rev. 2.0
1/10March 2005
STP12PF06 STF12PF06
Table 4: THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 2.5 5.35 °C/W
Rthj-amb
T
l
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max 62.5
300
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
60 V
Breakdown Voltage
= Max Rating
I
DSS
I
GSS
Table 6: ON
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
(*)
DS
= 0)
GS
= 0)
V
DS
= Max Rating TC = 125°C
V
DS
= ± 20V
V
GS
1
10
±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS ID = 250 µA
DS
V
= 10 V ID = 10 A
GS
23.44 V
0.18 0.20 Ω
Resistance
Table 7: DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(2)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
15 V
V
DS =
DS
ID
= 25V f = 1 MHz VGS = 0
= 6 A
2.5 6 S
850
230
75
µA
µA
pF
pF
pF
2/10
STP12PF06 STF12PF06
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Ga te Char ge
Gate-Source Charg e
Gate-Drain Charge
Table 9: SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
Table 10: SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(1 )
Pulse width limited by safe operating area.
(2)
Pulsed: Pulse duration = 300 µs , duty cycle 1.5 %.
Source-drain Curre nt
(1)
Source-drain Curre nt (pu lse d)
(2)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 30 V ID = 6 A
DD
=4.7 Ω VGS = 10 V
R
G
(Resistive Load, Figu re 19)
V
= 48 V ID= 12 A VGS= 10 V
DD
V
= 30 V ID = 6 A
DD
=4.7Ω, V
R
G
GS
= 10 V
(Resistive Load, Figu re 19)
I
= 12 A VGS = 0
SD
I
= 12 A di/dt = 100A/µs
SD
= 30 V Tj = 150°C
V
DD
(see test circuit, Figure 21)
20
40
16
4
6
40
10
100
260
5.2
21 nC
10
40
2.5 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Figure 3: Safe Operating Area for TO-220 Figure 4: Safe Operating Area for TO-220FP
3/10
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