ST STE70NM60 User Manual

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STE70NM60

N-CHANNEL 600V - 0.050Ω - 70A ISOTOP

Zener-Protected MDmesh™Power MOSFET

TYPE V

STE70NM60 600V < 0.055Ω 70 A



TYPICAL RDS(on) = 0.050Ω



HIGH dv/dt AND AVALANCHE CAPABILITIES



IMPROVED ESD CAPABILITY



LOW INPUT CAPACITANCE AND GATE

DSS

R

DS(on)

I

D

CHARGE



LOW GATE INPUT RESISTANCE



TIGHT PROCESS CONTROL



INDUSTRY’S LOWEST ON-RESISTANCE

DESCRIPTION

The MDmes h™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro­cess with the Company’s PowerMESH™ horizontal
layout. Theresulting produc t has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic perfo rmance that issignificantly better than
that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increas ing
power densi ty of high voltage converters allowing
system miniaturization and higher efficiencies.

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STE70NM60 E70NM60 ISOTOP TUBE

1/8March 2003

STE70NM60

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns

T

stg

T

j

(•)Pulse width limited by safe operating area

≤70A, di/dt ≤400 A/µs, VDD≤ V

(1) I

SD

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 0.2 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

T

l

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

600 V

600 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 280 A
Total Dissipation at TC= 25°C

70 A
44 A

600 W
Gate source ESD(HBM-C=100pF, R=15KΩ) 6KV
Derating Factor 4.5 W/°C

Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(BR)DSS,Tj≤TJMAX.

Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=35V)

j

30 A

1.4 J

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specificall y b een des igned to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect t he Zener voltage is appropriate to achie ve an ef fi cient and
cost-effective intervention to protect the device’s integrity. Th es e integrated Zener diodes thus avoid t he
usage of external components.

2/8

STE70NM60

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS O THERWISE SPECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µA, VGS= 0 600 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

= Max Rating, TC= 125°C

V

DS

V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 250 µA

34

10 µA

100 µA

5V

VGS=10V,ID= 30 A 0.050 0.055 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=I

g

fs

C

iss

C

oss

C

rss

R

G

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

Gate Input Resistance f=1 MHz Gate DC Bias = 0

D(on)xRDS(on)max,

ID=30A

=25V,f=1MHz,VGS= 0 7300

V

DS

Test Signal Level = 20mV
Open Drain

35 S

2000

40

1.8 Ω

pF
pF
pF

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Delay Time

t

r

Rise Time

VDD=300V,ID=30A

= 4.7Ω VGS=10V

R

G

55
95

(see test circuit, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD=470V,ID=60A,
VGS=10V

178

44.5
95

266 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

Off-voltage Rise Time

f

c

Fall Time
Cross-over Time

VDD= 400 V, ID=60A,
RG=4.7Ω, VGS=10V
(see test circuit, Figure 5)

130

76

105

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current
Source-drain Current (pulsed)

(2)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

ISD=60A,VGS=0
I

SD

VDD=30V,Tj= 150°C
(see test circuit, Figure 5)

= 60 A, di/dt = 100 A/µs,

600

14
48

60

240

1.5 V

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

3/8