ST STE53NC50 User Manual

STE53NC50

STE53NC50

N-CHANNEL 500V - 0.070Ω - 53A ISOTOP

PowerMesh™II MOSFET

TYPE	VDSS	RDS(on)	ID
STE53NC50	500V	< 0.08Ω	53 A

nTYPICAL RDS(on) = 0.07 Ω

nEXTREMELY HIGH dv/dt CAPABILITY

n100% AVALANCHE TESTED

nNEW HIGH VOLTAGE BENCHMARK

nGATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS

nHIGH CURRENT, HIGH SPEED SWITCHING

nSWITH MODE POWER SUPPLIES (SMPS)

nDC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

Symbol	Parameter		Value	Unit
VDS	Drain-source Voltage (VGS = 0)		500	V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)		500	V
VGS	Gatesource Voltage		±30	V
ID	Drain Current (continuos) at TC = 25°C		53	A
ID	Drain Current (continuos) at TC = 100°C		33	A
IDM (l)	Drain Current (pulsed)		212	A
PTOT	Total Dissipation at TC = 25°C		460	W
	Derating Factor		3.68	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope		3	V/ns
VISO	Insulation Winthstand Voltage (AC-RMS)		2500	V
Tstg	Storage Temperature		– 65 to 150	°C
Tj	Max. Operating Junction Temperature		150	°C
(•)Pulse width limited by safe operating area		(1) ISD≤ 53A, di/dt≤100 A/μs, VDD≤ 24V, Tj≤TjMAX

May 2002

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STE53NC50

THERMAL DATA

Rthj-case	Thermal Resistance Junction-case	Max	0.272	°C/W
Rthc-h	Thermal Resistance Case-heatsink with Conductive		0.05	°C/W
	Grease Applied

AVALANCHE CHARACTERISTICS

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	53	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	1043	mJ
	(starting Tj = 25 °C, I D = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	500			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			10	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			100	µA
IGSS	Gate-body Leakage	VGS = ± 30V			±100	nA
	Current (VDS = 0)

ON (1)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250µA	2	3	4	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 27A		0.07	0.08	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS > ID(on) x RDS(on)max,		42		S
		ID = 15 A
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		11.2		nF
Coss	Output Capacitance			1350		pF
Crss	Reverse Transfer			115		pF
	Capacitance

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

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STE53NC50

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 250V, ID = 26.5A		46		ns
tr	Rise Time	RG = 4.7Ω VGS = 10V		70		ns
		(see test circuit, Figure 3)
Qg	Total Gate Charge	VDD = 400V, ID = 53A,		310	434	nC
Qgs	Gate-Source Charge	VGS = 10V		46		nC
Qgd	Gate-Drain Charge			150		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tr(Voff)	Off-voltage Rise Time	VDD = 400V, ID = 53A,		45		ns
tf	Fall Time	RG = 4.7Ω, VGS = 10V		38		ns
		(see test circuit, Figure 5)
tc	Cross-over Time			85		ns

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
ISD	Source-drain Current				53	A
ISDM (2)	Source-drain Current (pulsed)				212	A
VSD (1)	Forward On Voltage	ISD = 53A, VGS = 0			1.6	V
trr	Reverse Recovery Time	ISD = 53A, di/dt = 100A/µs,		760		ns
Qrr	Reverse Recovery Charge	VDD = 70V, Tj = 150°C		17.86		µC
		(see test circuit, Figure 5)
IRRM	Reverse Recovery Current			47		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.

Safe Operating Area Thermal Impedence

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