ST STE53NA50 User Manual

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STE53NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STE53 NA 5 0 500 V < 0.085 53 A
TYPICALR
HIGH CURRENTPOWER MODULE
AVALANCHERUGGEDTECHNOLOGY
DS(on)
=0.075
CAPABILITY
EASY TO MOUNT
SAME CURRENTCAPABILITYFOR THE
TWOSOURCE TERMINALS
EXTREMELY LOW Rth (Junction to case)
VERYLOW INTERNAL PARASITIC
INDUCTANCE
ISOLATEDPACKAGEULRECOGNIZED
APPLICATIONS
SMPS & UPS
MOTORCONTROL
WELDINGEQUIPMENT
OUTPUTSTAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
V
() Pulsewidth limited by safe operating area
February 1998
Drain-sourc e V ol t ag e (VGS=0) 500 V
DS
DGR Drain- g at e Voltage ( R
Gate- source Voltage ± 30 V
GS
I
Drain Current (con t inuous) a t Tc=25oC53A
D
I
Drain Current (con t inuous) a t Tc=100oC33A
D
=20kΩ)
GS
500 V
() Drain Current (pulsed) 212 A
Total Dissipation at Tc=25oC460W
tot
Derating Fa c tor 3.68 W/ St orage T emperat ure -55 to 150
stg
T
Max. O pera ting Junction T emperat ure 150
j
Insulation Withhstand Voltage (AC-RMS) 2500 V
ISO
o
C
o
C
o
C
1/7
STE53NA50
THERMAL DATA
R
thj-case
R
thc-h
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
E
Ther mal Resist ance Junctio n-case Max Ther mal Resist ance Case-heat si nk With Cond uctive Gr ease Ap plied Max
Avalanche Cur rent, Repet it i v e or Not-Re petitive (pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
0.27
0.05
26 A
1014 mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Un it
V
(BR)DSS
Drain-sourc e
ID=1mA VGS= 0 500 V
Breakdown V oltage
I
I
DSS
GSS
Zer o Gat e Vo lt age Drain Current (V
GS
Gat e-body Leaka ge Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
= ± 30 V
V
GS
100
1000µAµA
± 400 nA
ON ()
Symbol Parameter Test Condition s Min. Typ. Max. Un it
V
GS(th )
Gate Threshold
VDS=VGSID=1mA 2.25 3 3.75 V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 27 A 0.075 0.085
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
53 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Un it
g
()Forward
fs
Tr ansconductanc e
C
C
C
Input Capac i t an c e
iss
Out put Capa c itance
oss
Reverse Transf er
rss
Capa cit an c e
VDS>I
D(on)XRDS(o n)MAXID
=27A 25 S
VDS=25V f=1MHz VGS=0 13
1500
450
16
2000
650
nF pF pF
2/7
STE53NA50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Un it
t
d(on)
t
r
Turn-on Time Rise Tim e
VDD=250V ID=27A
=4.7 VGS=10V
R
G
57 92
(see test circuit, figure 1)
Q
Q
Q
Total Gate Charge
g
Gat e-Sour ce Cha rge
gs
Gate-Drain Charge
gd
VDD=400V ID=53A VGS= 10 V 470
54
219
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Un it
t
r(Voff)
t
t
Of f - voltage Rise Time Fall Time
f
Cross-ov er Time
c
VDD=400V ID=53A
=4.7 VGS=10V
R
G
(see test circuit, figure 3)
105
36
145
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Un it
I
SD
I
SDM
V
SD
t
Q
I
RRM
() Pulsed: Pulse duration =300 µs, duty cycle 1.5 % () Pulse widthlimited by safeoperating area
Source-drain Curre nt
()
Source-drain Curre nt (pulsed)
() Forwar d On Vo lt age ISD=53A VGS=0 1.6 V
Reverse Recov er y
rr
Time Reverse Recov er y
rr
= 53 A di/d t = 100 A/µs
I
SD
=100V Tj=150oC
V
R
(see test circuit, figure 3)
1000
31.5 Charge Reverse Recov er y
63
Current
80
130
658 nC
145
50
205
53
212
ns ns
nC nC
ns ns ns
A A
ns
µC
A
Safe Operating Areafor ThermalImpedance
3/7
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