ST STE50DE100 User Manual

STE50DE100

STE50DE100

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1000 V - 50 A - 0.026 W POWER MODULE

Table 1: General Features

VCS(ON)	IC	RCS(ON)
1.3 V	50 A	0.026 W

nHIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION

nULTRA LOW EQUIVALENT ON RESISTANCE

n VERY FAST-SWITCH, UP TO 150 kHz

n ULTRA LOW CISS

n LOW DYNAMIC VCS(ON)

APPLICATION

n INDUSTRIAL CONVERTERS n WELDING

Figure 1: Package

ISOTOP

DESCRIPTION

The STE50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE50DE100 is designed for use in industrial converters and/or welding equipment.

Figure 2: Internal Schematic Diagram

Electrical Symbol

Device Structure

Table 2: Order Code

Part Number	Marking	Package	Packaging
STE50DE100	STE50DE100	ISOTOP	TUBE

October 2004	Rev. 1	1/9

STE50DE100

Table 3: Absolute Maximum Ratings

	Symbol	Parameter	Value	Unit
	VCS(SS)	Collector-Source Voltage (VBS = VGS = 0 V)	1000	V
	VBS(OS)	Base-Source Voltage (IC= 0, VGS = 0 V)	40	V
	VSB(OS)	Source-Base Voltage (IC= 0, VGS = 0 V)	12	V
	VGS	Gate-Source Voltage	± 20	V
	IC	Collector Current	50	A
	ICM	Collector Peak Current (tp < 5ms)	150	A
	IB	Base Current	10	A
	IBM	Base Peak Current (tp < 1ms)	50	A
	Ptot	Total Dissipation at T ≤ 25 oC	160	W
		C
	Tstg	Storage Temperature	-65 to 150	°C
	TJ	Max. Operating Junction Temperature	150	°C
	VISO	Insulation Withstand Voltage (AC-RMS) from All Four Leads to	2500	V
		External Heatsink

Table 4: Thermal Data

Rthj-case	Thermal Resistance Junction-Case	Max	0.78	oC/W
Rthc-h	Thermal Resistance Case-heatsink with Conductive Grease		0.05	oC/W
	Applied	Max

Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)

Symbol	Parameter		Test Conditions		Min.	Typ.	Max.	Unit
ICS(SS)	Collector-Source Current	VCS(SS) = 1000 V					100	mA
	(VBS = VGS = 0 V)
IBS(OS)	Base-Source Current	VBS(OS) = 40 V					10	mA
	(IC = 0 , VGS = 0 V)
ISB(OS)	Source-Base Current	VSB(OS) = 10 V					100	mA
	(IC = 0 , VGS = 0 V)
IGS(OS)	Gate-Source Leakage	VGS = ± 20 V					500	nA
VCS(ON)	Collector-Source ON	IC = 50 A	IB = 10 A	VGS = 10 V		1.3		V
	Voltage	IC = 30 A	IB = 3 A	VGS = 10 V		1.1		V
		(see figure 14)
hFE	DC Current Gain	IC = 50 A	VCS = 1 V	VGS = 10 V	3		7
		IC = 30 A VCS = 1 V VGS = 10 V			6		13
VBS(ON)	Base-Source ON Voltage	IC = 50 A	IB = 10 A	VGS = 10 V		2.2		V
		IC = 30 A	IB = 3 A	VGS = 10 V		1.4		V
VGS(th)	Gate Threshold Voltage	VBS = VGS		IB = 250 mA	3	3.7	4.5	V
Ciss	Input Capacitance	VCS = 25 V		f = 1MHZ		2500		pF
		VGS = VCB = 0
QGS(tot)	Gate-Source Charge	VCS = 25 V		VGS = 10 V		60		nC
		VCB = 0		IC = 50 A

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							STE50DE100
Symbol	Parameter		Test Conditions		Min.	Typ.	Max.	Unit
ts	INDUCTIVE LOAD	VGS = 10 V		VClamp = 800 V
	Storage Time	RG = 47 W		tp = 4 ms		0.65		ms
tf	Fall Time	IC = 25 A	IB = 5 A	(see figure 15)		10		ns
ts	INDUCTIVE LOAD	VGS = 10 V		VClamp = 800 V
	Storage Time	RG = 47 W		tp = 4 ms		0.43		ms
tf	Fall Time	IC = 25 A	IB = 2.5 A	(see figure 15)		6		ns
VCSW	Maximum Collector-Source	RG = 47 W	hFE = 5 A IC = 35 A		1000			V
	Voltage without Snubber
VCS(dyn)	Collector-Source Dynamic	VCC = VClamp = 300 V		VGS = 10 V		5.5		V
	Voltage	RG = 47 W		IB = 5 A
	(500 ns)
		IBpeak = IC = 25 A		tpeak = 500 ns
VCS(dyn)	Collector-Source Dynamic	VCC = VClamp = 300 V		VGS = 10 V		4.8		V
	Voltage	RG = 47 W		IB = 5 A
	(1ms)
		IBpeak = IC = 25 A		tpeak = 500 ns

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