ST STE50DE100 User Manual

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HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR

ESBT™ 1000 V - 50 A - 0.026 W POWER MODULE

STE50DE100

Table 1: General Features

V

CS(ON)

1.3 V 50 A 0.026 W

n HIGH VOLTAGE / HIGH CURRENT

I

C

R

CS(ON)

CASCODE CONFIGURATION

n ULTRA LOW EQUIVALENT ON

RESISTANCE

n VERY FAST-SWITCH, UP TO 150 kHz n ULTRA LOW C n LOW DYNAMIC V

ISS

CS(ON)

APPLICATION

n INDUSTRIAL CONVERTERS n WELDING

DESCRIPTION

The STE50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE50DE100 is designed for use in industrial converters and/or welding equipment.

Figure 1: Package

ISOTOP

Figure 2: Internal Schematic Diagram

Electrical Symbol Device Structure

Table 2: Order Code

Part Number Marking Package Packaging

STE50DE100 STE50DE100 ISOTOP TUBE

Rev. 1

1/9October 2004

STE50DE100

Table 3: Absolute Maximum Ratings

Symbol Parameter Value Unit

V

CS(SS)

V

BS(OS)

V

SB(OS)

V

I

CM

I

BM

P

T

V

ISO

Table 4: Thermal Data

R

thj-case

R

thc-h

Collector-Source Voltage (VBS = VGS = 0 V)

Base-Source Voltage (IC= 0, VGS = 0 V)

Source-Base Voltage (IC= 0, VGS = 0 V)

Gate-Source Voltage

GS

Collector Current

C

Collector Peak Current (tp < 5ms)

Base Current

B

Base Peak Current (tp < 1ms)

Total Dissipation at TC ≤ 25 oC

tot

Storage Temperature

stg

Max. Operating Junction Temperature

J

Insulation Withstand Voltage (AC-RMS) from All Four Leads to External Heatsink

Thermal Resistance Junction-Case Max

Thermal Resistance Case-heatsink with Conductive Grease Applied Max

1000 V

40 V

12 V

± 20 V

50 A

150 A

10 A

50 A

160 W

-65 to 150 °C

150 °C

2500 V

0.78

0.05

o

C/W

o

C/W

Table 5: Electrical Characteristics (T

= 25 oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CS(SS)

I

BS(OS)

I

SB(OS)

I

GS(OS)

V

CS(ON)

Collector-Source Current (V

= VGS = 0 V)

BS

Base-Source Current

(I

= 0 , VGS = 0 V)

C

Source-Base Current

(I

= 0 , VGS = 0 V)

C

V

= 1000 V 100 mA

CS(SS)

= 40 V 10 mA

BS(OS)

= 10 V 100 mA

SB(OS)

Gate-Source Leakage VGS = ± 20 V 500 nA

Collector-Source ON Voltage

IC = 50 A IB = 10 A VGS = 10 V

I

= 30 A IB = 3 A VGS = 10 V

C

1.3

1.1

(see figure 14)

h

V

BS(ON)

V

GS(th)

C

Q

GS(tot)

DC Current Gain IC = 50 A VCS = 1 V VGS = 10 V

FE

I

= 30 A VCS = 1 V VGS = 10 V

C

Base-Source ON Voltage IC = 50 A IB = 10 A VGS = 10 V

I

= 30 A IB = 3 A VGS = 10 V

C

Gate Threshold Voltage VBS = VGS IB = 250 mA33.74.5V

Input Capacitance VCS = 25 V f = 1MHZ

iss

V

= VCB = 0

GS

Gate-Source Charge VCS = 25 V VGS = 10 V

V

= 0 IC = 50 A

CB

3

6

2.2

1.4

2500 pF

60 nC

7

13

V

2/9

STE50DE100

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

V

CSW

V

CS(dyn)

V

CS(dyn)

INDUCTIVE LOAD

Storage Time

s

t

Fall Time

f

INDUCTIVE LOAD

Storage Time

s

t

Fall Time

f

Maximum Collector-Source Voltage without Snubber

Collector-Source Dynamic Voltage

(500 ns)

Collector-Source Dynamic Voltage

(1ms)

VGS = 10 V V

R

= 47 W tp = 4 ms

G

I

= 25 A IB = 5 A (see figure 15)

C

VGS = 10 V V

R

= 47 W tp = 4 ms

G

I

= 25 A IB = 2.5 A (see figure 15)

C

Clamp

= 800 V

0.65

10

0.43

6

ms

RG = 47 W hFE = 5 A IC = 35 A 1000 V

VCC = V

R

= 47 W IB = 5 A

G

I

= IC = 25 A t

Bpeak

VCC = V

R

= 47 W IB = 5 A

G

I

= IC = 25 A t

Bpeak

= 300 V VGS = 10 V

Clamp

= 300 V VGS = 10 V

Clamp

peak

5.5 V

= 500 ns

4.8 V

= 500 ns

ns

3/9