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STE48NM60
N-CHANNEL 600V - 0.09Ω - 48A ISOTOP
MDmesh™Power MOSFET
TYPE V
STE48NM60 600V < 0.11Ω 48 A
TYPICAL RDS(on) = 0.09Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
DSS
R
DS(on)
I
D
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Mul tiple Drain process with the Company’s PowerMES H ™ horizontal
layout. Theresulting produc t has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic perfo rmance that issignificantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increas ing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
T
stg
T
j
(•)Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 192 A
Total Dissipation at TC= 25°C
Derating Factor 3.57 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD≤48A, di/dt≤400A/µs, VDD≤ V
600 V
600 V
48 A
30 A
450 W
(BR)DSS,Tj≤TJMAX.
1/8June 2003
STE48NM60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.28 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=35V)
j
15 A
850 mJ
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 600 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±30V ±100 nA
GS
10 µA
100 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 22.5A
= 250µA
345V
0.09 0.11 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 1250 pF
Reverse Transfer
Capacitance
C
(2) Equivalent Output
oss eq.
Capacitance
R
G
1. Pulsed:Pulse duration = 300µs,duty cycle1.5 %.
2. C
Gate Input Resistance f=1 MHz Gate DC Bias = 0
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
V
DSS
D(on)xRDS(on)max,
ID= 22.5A
V
=25V,f=1MHz,VGS=0
DS
VGS=0V,VDS= 0V to 480V 340 pF
Test Signal Level = 20mV
Open Drain
oss
15 S
3800 pF
46 pF
1.4 Ω
when VDSincreases from 0 to 80%
2/8
STE48NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
gs
gd
Turn-on Delay Time
Rise Time 20 ns
Total Gate Charge
g
Gate-Source Charge 31 nC
Gate-Drain Charge 43 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 23 ns
Cross-over Time 40 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe o perating area.
Source-drain Current 48 A
(2)
Source-drain Current (pulsed) 192 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 250V, ID= 22.5A
DD
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
V
= 400V, ID= 45A,
DD
VGS=10V
V
=400V,ID= 45A,
DD
= 4.7Ω, VGS=10V
R
G
(see test circuit, Figure 5)
ISD= 45A, VGS=0
= 45A, di/dt = 100A/µs,
I
SD
VDD= 100 V, Tj= 25°C
(see test circuit, Figure 5)
= 45A, di/dt = 100A/µs,
I
SD
V
= 100 V, Tj= 150°C
DD
(see test circuit, Figure 5)
30 ns
96 134 nC
16 ns
1.5 V
508
10
40
650
14
43
ns
µC
A
ns
µC
A
Safe Operating Area Thermal Imped ance
3/8
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