ST STE48NM60 User Manual
STE48NM60
STE48NM60
N-CHANNEL 600V - 0.09Ω - 48A ISOTOP
MDmesh™Power MOSFET
TYPE |
VDSS |
RDS(on) |
ID |
STE48NM60 |
600V |
< 0.11Ω |
48 A |
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TYPICAL RDS(on) = 0.09Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
Symbol |
Parameter |
|
Value |
Unit |
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VDS |
Drain-source Voltage (VGS = 0) |
|
600 |
V |
VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
|
600 |
V |
VGS |
Gatesource Voltage |
|
±30 |
V |
ID |
Drain Current (continuous) at TC = 25°C |
|
48 |
A |
ID |
Drain Current (continuous) at TC = 100°C |
|
30 |
A |
IDM ( ) |
Drain Current (pulsed) |
|
192 |
A |
PTOT |
Total Dissipation at TC = 25°C |
|
450 |
W |
|
Derating Factor |
|
3.57 |
W/°C |
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dv/dt (1) |
Peak Diode Recovery voltage slope |
|
15 |
V/ns |
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Tstg |
Storage Temperature |
|
–65 to 150 |
°C |
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Tj |
Max. Operating Junction Temperature |
|
150 |
°C |
(•)Pulse width limited by safe operating area |
(1) ISD ≤48A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. |
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June 2003 |
1/8 |
STE48NM60
THERMAL DATA
Rthj-case |
Thermal Resistance Junction-case |
Max |
0.28 |
°C/W |
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Rthj-amb |
Thermal Resistance Junction-ambient |
Max |
30 |
°C/W |
Tl |
Maximum Lead Temperature For Soldering Purpose |
300 |
°C |
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AVALANCHE CHARACTERISTICS
Symbol |
Parameter |
Max Value |
Unit |
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IAR |
Avalanche Current, Repetitive or Not-Repetitive |
15 |
A |
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(pulse width limited by Tj max) |
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EAS |
Single Pulse Avalanche Energy |
850 |
mJ |
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(starting Tj = 25 °C, I D = IAR, VDD = 35 V) |
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ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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V(BR)DSS |
Drain-source |
ID = 250 µA, VGS = 0 |
600 |
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V |
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Breakdown Voltage |
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IDSS |
Zero Gate Voltage |
VDS = Max Rating |
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|
10 |
µA |
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Drain Current (VGS = 0) |
VDS = Max Rating, TC = 125 °C |
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100 |
µA |
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IGSS |
Gate-body Leakage |
VGS = ±30V |
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±100 |
nA |
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Current (VDS = 0) |
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ON (1)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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VGS(th) |
Gate Threshold Voltage |
VDS = VGS, ID = 250µA |
3 |
4 |
5 |
V |
RDS(on) |
Static Drain-source On |
VGS = 10V, ID = 22.5A |
|
0.09 |
0.11 |
Ω |
|
Resistance |
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DYNAMIC
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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gfs (1) |
Forward Transconductance |
VDS > ID(on) x RDS(on)max, |
|
15 |
|
S |
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ID = 22.5A |
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Ciss |
Input Capacitance |
VDS = 25V, f = 1 MHz, VGS = 0 |
|
3800 |
|
pF |
Coss |
Output Capacitance |
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|
1250 |
|
pF |
Crss |
Reverse Transfer |
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46 |
|
pF |
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Capacitance |
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Coss eq. (2) |
Equivalent Output |
VGS = 0V, VDS = 0V to 480V |
|
340 |
|
pF |
|
Capacitance |
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RG |
Gate Input Resistance |
f=1 MHz Gate DC Bias = 0 |
|
1.4 |
|
Ω |
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Test Signal Level = 20mV |
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Open Drain |
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1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2.Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
2/8
STE48NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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td(on) |
Turn-on Delay Time |
VDD = 250V, ID = 22.5A |
|
30 |
|
ns |
tr |
Rise Time |
RG = 4.7Ω VGS = 10V |
|
20 |
|
ns |
(see test circuit, Figure 3) |
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Qg |
Total Gate Charge |
VDD = 400V, ID = 45A, |
|
96 |
134 |
nC |
Qgs |
Gate-Source Charge |
VGS = 10V |
|
31 |
|
nC |
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Qgd |
Gate-Drain Charge |
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43 |
|
nC |
SWITCHING OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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tr(Voff) |
Off-voltage Rise Time |
VDD = 400V, ID = 45A, |
|
16 |
|
ns |
tf |
Fall Time |
RG = 4.7Ω, VGS = 10V |
|
23 |
|
ns |
(see test circuit, Figure 5) |
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tc |
Cross-over Time |
|
40 |
|
ns |
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SOURCE DRAIN DIODE
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
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|
|
ISD |
Source-drain Current |
|
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|
48 |
A |
ISDM (2) |
Source-drain Current (pulsed) |
|
|
|
192 |
A |
VSD (1) |
Forward On Voltage |
ISD = 45A, VGS = 0 |
|
|
1.5 |
V |
trr |
Reverse Recovery Time |
ISD = 45A, di/dt = 100A/µs, |
|
508 |
|
ns |
Qrr |
Reverse Recovery Charge |
VDD = 100 V, Tj = 25°C |
|
10 |
|
µC |
IRRM |
Reverse Recovery Current |
(see test circuit, Figure 5) |
|
40 |
|
A |
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trr |
Reverse Recovery Time |
ISD = 45A, di/dt = 100A/µs, |
|
650 |
|
ns |
Qrr |
Reverse Recovery Charge |
VDD = 100 V, Tj = 150°C |
|
14 |
|
µC |
IRRM |
Reverse Recovery Current |
(see test circuit, Figure 5) |
|
43 |
|
A |
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Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedance
3/8
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