ST STE40NA60 User Manual

查询STE40NA60供应商

N - CHANNEL ENHANCEMENT MODE

TYPE V

DSS

STE40 NA 6 0 600 V < 0 .135 Ω 40 A

R

DS(on)

STE40NA60

FAST POWER MOS TRANSISTOR

PRELIMINARY DATA

I

D

■ TYPICALR

■ HIGH CURRENTPOWER MODULE

■ AVALANCHERUGGEDTECHNOLOGY

■ VERYLARGE SOA - LARGE PEAK POWER

DS(on)

=0.12 Ω

CAPABILITY

■ EASY TO MOUNT

■ SAME CURRENTCAPABILITYFOR THE

TWOSOURCE TERMINALS

■ EXTREMELY LOW Rth (Junctionto case)

■ VERYLOW INTERNAL PARASITIC

INDUCTANCE

■ ISOLATEDPACKAGEULRECOGNIZED

APPLICATIONS

■ SMPS & UPS

■ MOTORCONTROL

■ WELDINGEQUIPMENT

■ OUTPUTSTAGE FOR PWM,ULTRASONIC

CIRCUITS

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

T

V

(•) Pulsewidth limited by safe operatingarea

January 1998

Drain-sourc e V ol t ag e (VGS=0) 600 V

DS

Drain- g at e Voltage (RGS=20kΩ)

DGR

Gate- source Voltage ± 30 V

GS

I

Drain Current (con t inuous) a t Tc=25oC40A

D

I

Drain Current (con t inuous) a t Tc=100oC26A

D

600 V

(•) Drain Current (pulsed) 160 A

Total Dissipation at Tc=25oC460W

tot

Derating Factor 3.6 W/
St orage Temperatur e -55 to 15 0

stg

T

Max. Operating Junction T empe rature 150

j

Insulation Withhstand Voltage (AC-RMS) 2500 V

ISO

o

C

o

C

o

C

1/5

STE40NA60

THERMAL DATA

R

thj-case

R

thc-h

AVALANCHE CHARACTERISTICS

Symbol Para met e r Max Value Uni t

I

AR

E

Ther mal Resist ance Junctio n-case Max
Ther mal Resist ance Case-heat si nk With C ond uctive
Gr ease A p plied M ax

Avalanche Cur rent, Repet it i v e or Not-Re petitive
(pulse width lim ited b y T

Single Pulse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max, δ <1%)

j

0.27

0.05

20 A

3000 mJ

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

(BR)DSS

Drain-sourc e

=500µAVGS=0

I

D

900 V

Breakdown V oltage

I

I

DSS

GSS

Zer o Gat e V o lt age
Drain Current (V

GS

Gat e-body Leaka ge
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=0.8x Max Rating Tc= 125oC

V

DS

= ± 30 V

V

GS

250

1000µAµA

± 200 nA

ON (∗)

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

GS(th )

Gate Threshold

VDS=VGSID=1mA 2.25 3 3.75 V

Voltage

R

DS(on)

Stati c D rain-source On

VGS=10V ID= 2 0 A 0.12 0. 1 35 Ω

Resistance

I

D(on)

On State Drain Curre nt VDS>I

D(on)xRDS(on)max

40 A

VGS=10V

DYNAMIC

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconductanc e

C

C

C

Input Capac i t an c e

iss

Out put C apa c itance

oss

Reverse Transf er

rss

Capa cit an c e

VDS>I

D(on)xRDS(on)maxID

=20A 20 S

VDS=25V f=1.0MHz VGS= 0 13000

1500

350

16000

1700

450

pF
pF
pF

2/5