ST STE38NB50 User Manual

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N - CHANNEL 500V - 0.11 - 38A - ISOTOP
TYPE V
DSS
STE38NB50 500 V < 0.13 38 A
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
± 30V GATE TO SOURCE VOLTA GE RATING
LOW INTRINSIC CAPACITANCE
GATE CH ARGE MINIMIZED
REDUCED VOLTAGE SPRE AD
DS(on)
= 0.11
DESCRIPTIO N
Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an ad­vanced family of power MOSFETs with outstand­ing performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristic s.
R
DS(on)
I
D
STE38NB50
PowerMESH MOSFET
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPE ED SWI TCHING
SWITCH MODE P OW ER SUP P LY (S MP S)
DC-AC CONVERTER FOR W ELDING
EQUIPMENT AND UNINTERRUPTABLE POWER SU PPLY AND MOTOR DRIV E
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
T
(•) Pulse width limited by safe operating area (1) ISD 38 A, di/dt ≤ 200 A/µs, VDD V
June 1998
Drain-source Voltage (VGS = 0) 500 V
DS
Drain- gate Voltage (RGS = 20 k) 500 V
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC38A
D
I
Drain Current (continuous) at Tc = 100 oC24A
D
() Drain Current (pulsed) 152 A
Total Dissipation at Tc = 25 oC 400 W
tot
Derating Factor 3.2 W/
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
, Tj T
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
STE38NB50
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 50 V)
0.31 30
0.1
300
38 A
1200 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 500 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage Drain Current (V
GS
Gate-body Leakage Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
= ± 30 V ± 100 nA
V
GS
10
100
ON ()
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V Static Drain-source On
= VGS ID = 250 µA 345V
DS
VGS = 10 V ID = 19 A 0.11 0.13
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
38 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
() Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 19 A 18 20 S
80
9100 1235
104
= 0 7000
GS
950
µA µA
pF pF pF
2/8
STE38NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time Rise Time
V
= 250 V ID = 19 A
DD
R
= 4.7 VGS = 10 V
G
46 32
(see test circuit, figure 3)
Q Q Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 400 V ID = 38 A V
DD
= 10 V 159
GS
35 67
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
Off-voltage Rise Time Fall Time
t
f
Cross-over Time
c
V
= 400 V ID = 38 A
DD
R
= 4.7 VGS = 10 V
G
(see test circuit, figure 5)
56 53
120
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
I
SDM
SD
Q
I
RRM
SD
t
Source-drain Current
()
Source-drain Current (pulsed)
() Forward On Voltage ISD = 38 A VGS = 0 1.6 V
Reverse Recovery
rr
Time Reverse Recovery
rr
I
= 38 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
DD
(see test circuit, figure 5)
950
12 Charge Reverse Recovery
25 Current
64 45
223 nC
78 74
168
38
152
ns ns
nC nC
ns ns ns
A A
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % () Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
3/8
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