ST STE26N50 User Manual
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POWER MOS TRANSISTOR IN ISOTOP PACKAGE
STE26N50
N - CHANNEL ENHANCEMENT MODE
TYPE V
DSS
R
DS(on)
I
D
STE26N50 500 V < 0.2 Ω 26 A
■ HIGH CURRENT POWER MODULE
■ AVALANCHE RUGGED TECHNOLOGY
(SEE IRFP450 FOR RATING)
■ VERY LARGE SOA- LARGE PEAK POWER
CAPABILITY
■ EASY TO MOUNT
■ SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
■ EXTREMELY LOW R
■ VERY LOW DRAIN TO CASE CAPACITANCE
■ VERY LOW INTERNAL PARASITIC
JUNCTION TO CASE
th
INDUCTANCE (TYPICALLY < 5 nH)
■ ISOLATED PACKAGE UL RECOGNIZED
(FILE No E81743)
INDUSTRIAL APPLICATIONS:
■ SMPS & UPS
■ MOTOR CONTROL
■ WELDING EQUIPMENT
■ OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
4
3
1
2
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
V
V
I
DM
P
T
V
(•) Pulse widthlimitedbysafeoperating area
July 1993
Drain-Source Voltage (VGS= 0) 500 V
DS
Drain-Gate Voltage (RGS=20kΩ) 500 V
DGR
Gat e- Source Volta ge ± 20 V
GS
Drain Cur rent ( c ontinuous) at Tc=25oC26A
I
D
Drain Cur rent ( c ontinuous) at Tc=100oC17A
I
D
(•) Drain Curr ent ( pulsed) 104 A
Total Dissipation at Tc=25oC 300 W
tot
Derat ing Fac t or 2.4 W/
St or a ge Temperature -55 to 150
stg
Max. O per ating Junct ion Tem p era tur e 150
T
j
Ins ulation W it hstand Volt ag e (AC- RMS) 2500 V
ISO
o
C
o
C
o
C
1/8
STE26N50
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction -c as e Max
Thermal Resistance Case- heatsi nk W ith Conductive
Gre ase Appli ed Max
0.42
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
V
(BR)DSS
Drain - s ource
ID=1mA VGS= 0 V 500 V
Break d own Volt a ge
I
DSS
I
GSS
Zer o Gate Voltage
Drain Curr ent ( VGS=0)
Gat e- body Leakage
VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC
200
1
VGS= ± 20 V ± 200 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
Gate T hreshold Voltage VDS=VGSID=1mA 2 4 V
St at ic Drain-sourc e On
VGS=10V ID=13A 0.2 Ω
Resistance
DYNAMIC
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
(∗)Forward
g
fs
Tr anscondu c t anc e
C
C
C
Input Capacitance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacitance
VDS=15V ID=13A 12 S
VDS=25V f=1MHz VGS=0V 6
1200
500
µA
mA
nF
pF
pF
SWITCHING ON
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
2/8
t
d(on)
t
(di/dt)
Q
Turn-on Time
Rise Time
r
Turn-on Current S lope VDD= 400 V ID=26A
on
Total Gate Charge VDD= 400 V ID=26A
g
VDD=250V ID=13A
RG=4.7Ω VGS=10V
(see test circuit, figure 1)
R
=4.7Ω VGS=10V
G
(see test circuit, figure 3)
VGS=10V
60
80
450 A/µs
275 nC
ns
ns
STE26N50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
t
r(Voff)
t
Off -voltage Rise T ime
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulseduration= 300µs, dutycycle 1.5%
(•) Pulse width limited by safeoperatingarea
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) Forward On Voltage ISD=26A VGS=0 1.4 V
Reverse Recov er y
rr
Time
Reverse Recov er y
rr
Charge
Reverse Recov er y
Current
VDD= 400 V ID=26A
RG=4.7Ω VGS=10V
(see test circuit, figure 3)
ISD=26A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 3)
63
25
85
26
104
850
23.5
55
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area Thermal Impedance
3/8
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