ST STE250NS10 User Manual

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STE250NS10

N-CHANNEL 100V - 0.0045 Ω - 220A ISOTOP

STripFET™ POWER MOSFET

TYPE

V

DSS

STE250NS10 100 V <0.0055

■ TYPICAL R

■ STANDARD THRESHOLD DRIVE

■ 100% AVALANCHE TESTED

(on) = 0.0045Ω

DS

R

DS(on)

I

D

220A

Ω

APPLICATIONS

■ SMPS & UPS

■ MOTOR CONTROL

■ WELDING EQUIPMENT

■ OUTPUT STAGE FOR PWM, ULTRASONIC

CIRCUITS

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

(

I

DM

P

tot

dv/dt

V

ISO

T

stg

T

j

(

Pulse width l i mited by safe operating area. (1 )ISD ≤220A, di/dt ≤200A/µs, VDD ≤ V

•)

.

Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)

100 V 100 V

Gate- source Voltage ± 20 V

Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C

•)

Drain Current (pulsed) 880 A Total Dissipation at TC = 25°C

220 A 156 A

500 W

Derating Factor 4 W/°C

(1)

Peak Diode Recovery voltage slope 3.5 V/ns Insulation Withstand Voltage (AC-RMS) 2500 V Storage Temperature -55 to 150 °C Operating Junction Temperature 150 °C

(BR)DSS

, Tj ≤ T

JMAX

.

1/8September 2001

STE250NS10

THERMA L D ATA

Rthj-case

Rthj-amb

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T

max)

j

Single Pulse Avalanche Energy (starting T

= 25 °C, ID = IAR, VDD = 64 V)

j

Max Max

0.25 50

220 A

800 mJ

°C/W °C/W

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source Breakdown

I

= 1 mA VGS = 0

D

100 V

Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

= ± 20V

V

GS

50

500

±400 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage Static Drain-source On

Resistance

= VGS I

DS

V

= 10 V ID = 125 A

GS

= 250 µA

D

234V

0.0045 0.0055

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

g

fs

C

iss

C

oss

C

rss

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

= 20 V ID= 70 A

DS

= 25V, f = 1 MHz, VGS = 0

V

DS

60 S 31

4.3

1.2

µA µA

Ω

nF nF nF

2/8

STE250NS10

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 50 V ID = 125 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

= 50V ID= 220A V

V

DD

GS

= 10V

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 50 V ID = 125 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

110 380

900 160 330

1100

330

ns ns

nC nC nC

ns ns

t

r(Voff)

t

f

c

Fall Time Cross-over Time

Off-voltage Rise Time

= 80 V ID = 220 A

V

clamp

R

= 4.7Ω, V

G

GS

= 10 V

(Inductive Load, Figure 5)

950 330 600

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by s afe operating area.

Safe Operating Area

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

I

= 220 A VGS = 0

SD

= 220 A di/dt = 100A/µs

I

SD

V

= 30 V Tj = 150°C

DD

(see test circuit, Figure 5)

Thermal Impedance

220 880

1.5 V

200

1.35

13.5

ns ns ns

ns

µ

A A

C

A

3/8