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STE250NS10
N-CHANNEL 100V - 0.0045 Ω - 220A ISOTOP
STripFET™ POWER MOSFET
TYPE
V
DSS
STE250NS10 100 V <0.0055
■ TYPICAL R
■ STANDARD THRESHOLD DRIVE
■ 100% AVALANCHE TESTED
(on) = 0.0045Ω
DS
R
DS(on)
I
D
220A
Ω
APPLICATIONS
■ SMPS & UPS
■ MOTOR CONTROL
■ WELDING EQUIPMENT
■ OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
dv/dt
V
ISO
T
stg
T
j
(
Pulse width l i mited by safe operating area. (1 )ISD ≤220A, di/dt ≤200A/µs, VDD ≤ V
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
100 V
100 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
•)
Drain Current (pulsed) 880 A
Total Dissipation at TC = 25°C
220 A
156 A
500 W
Derating Factor 4 W/°C
(1)
Peak Diode Recovery voltage slope 3.5 V/ns
Insulation Withstand Voltage (AC-RMS) 2500 V
Storage Temperature -55 to 150 °C
Operating Junction Temperature 150 °C
(BR)DSS
, Tj ≤ T
JMAX
.
1/8September 2001
STE250NS10
THERMA L D ATA
Rthj-case
Rthj-amb
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 64 V)
j
Max
Max
0.25
50
220 A
800 mJ
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source Breakdown
I
= 1 mA VGS = 0
D
100 V
Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
= ± 20V
V
GS
50
500
±400 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
V
= 10 V ID = 125 A
GS
= 250 µA
D
234V
0.0045 0.0055
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
= 20 V ID= 70 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
60 S
31
4.3
1.2
µA
µA
Ω
nF
nF
nF
2/8
STE250NS10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 50 V ID = 125 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 50V ID= 220A V
V
DD
GS
= 10V
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 50 V ID = 125 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
110
380
900
160
330
1100
330
ns
ns
nC
nC
nC
ns
ns
t
r(Voff)
t
t
f
c
Fall Time
Cross-over Time
Off-voltage Rise Time
= 80 V ID = 220 A
V
clamp
R
= 4.7Ω, V
G
GS
= 10 V
(Inductive Load, Figure 5)
950
330
600
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Safe Operating Area
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 220 A VGS = 0
SD
= 220 A di/dt = 100A/µs
I
SD
V
= 30 V Tj = 150°C
DD
(see test circuit, Figure 5)
Thermal Impedance
220
880
1.5 V
200
1.35
13.5
ns
ns
ns
ns
µ
A
A
C
A
3/8
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