ST STE250N06 User Manual

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POWER MOS TRANSISTOR IN ISOTOP PACKAGE

STE250N06

N - CHANNEL ENHANCEMENT MODE

TYPE V

DSS

R

DS(on)

I

D

STE250N06 60 V < 0.004 Ω 250 A

■ HIGH CURRENT POWER MODULE

■ AVALANCHE RUGGED TECHNOLOGY

(SEE STH80N06 FOR RATING)

■ VERY LARGE SOA - LARGE PEAK POWER

CAPABILITY

■ EASY TO MOUNT

■ SAME CURRENT CAPABILITY FOR THE

TWO SOURCE TERMINALS

■ EXTREMELY LOW R

■ VERY LOW DRAIN TO CASE CAPACITANCE

■ VERY LOW INTERNAL PARASITIC

JUNCTION TO CASE

th

INDUCTANCE (TYPICALLY < 5 nH)

■ ISOLATED PACKAGE UL RECOGNIZED

(FILE No E81743)

INDUSTRIAL APPLICATIONS:

■ SMPS & UPS

■ MOTOR CONTROL

■ WELDING EQUIPMENT

■ OUTPUT STAGE FOR PWM, ULTRASONIC

CIRCUITS

4

3

1

2

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

DM

P

T

V

(•) Pulse width limited by safe operating area

May 1995

Drai n -So ur ce Volt ag e ( VGS = 0) 60 V

DS

Drain-Gate Voltage (RGS = 20 kΩ)60V

DGR

Gate-Source Voltage ± 20 V

GS

I

Drain Current (continuous) at Tc = 25 oC250A

D

I

Drain Current (continuous) at Tc = 100 oC155A

D

(•) Drain Current (pulsed) 750 A

Total Dissipation at Tc = 25 oC450W

tot

Derating Factor 3.6 W/ Storage Temperature -55 to 150

stg

T

Max. Operating Junction Temperature 150

j

Insu lat ion With sta nd Volt age ( AC-RM S) 2500 V

ISO

o

C

o

C

o

C

1/8

STE250N06

THERMAL DATA

R

thj-case

R

thc-h

Thermal Resistance Junction-case Max Thermal Resistance Case-heatsink With Conductive Grease A p pl ied M ax

0.27

0.05

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Ty p. Max. Unit

V

(BR) DSS

Drain-source

ID = 1 mA V

= 0 V 60 V

GS

Bre akdow n Vol tage

I

DSS

I

GSS

Zero Ga te V ol t ag e Drain Current (V

GS

Gate -body Leaka ge

VDS = Max Rating

= 0)

VDS = Max Rating x 0.8 Tc = 125 oC VGS = ± 20 V ± 400 nA

400

2

Current (VDS = 0)

ON (∗)

Symbol Parameter Test Condition s Min. Ty p. Max. Unit

V

R

GS(th) DS(on)

Gate Threshold Voltage V Stat ic Dra in-s ourc e On

= VGS ID = 1 mA 2 4 V

DS

VGS = 10V ID = 125 A 0.004 Ω

Resistance

DYNAMIC

Symbol Parameter Test Condition s Min. Ty p. Max. Unit

g

(∗)Forward

fs

Transconductance

C C C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS = 15 V ID = 125 A 100 S

V

= 25 V f = 1 MHz V

DS

= 0 V 25

GS

10000

3000

µA

mA

nF pF pF

SWITCHING ON

Symbol Parameter Test Condition s Min. Ty p. Max. Unit

(di/dt)

2/8

t

d(on)

Q

t

r

Turn-on Time Rise Time

V

= 25 V ID = 125 A

DD

RG = 4.7 Ω VGS = 10 V (see test circuit, figure 1)

Turn-on Current Slope VDD = 40 V ID = 250 A

on

RG = 4.7 Ω VGS = 10 V (see test circuit, figure 3)

Tot al G a te C ha r ge VDD = 40 V ID = 250 A

g

VGS = 10 V

95

300

440 A/µs

475 nC

ns ns

STE250N06

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING OFF

Symbol Parameter Test Condition s Min. Ty p. Max. Unit

t

r(Voff)

t

SOURCE DRAIN DIODE

Symbol Parameter Test Condition s Min. Ty p. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

Off-voltage Rise Time

t

Fall Time

f

Cross-over Time

c

Source-drain Current

(•)

Source-drain Current

VDD = 40 V ID = 250 A RG = 4.7 Ω VGS = 10 V (see test circuit, figure 3)

140 745

1000

250 750

(pulsed)

(∗) F or w ar d On V ol t ag e ISD = 250 A VGS = 0 1.6 V

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD = 250 A di/dt = 100 A/µs VDD = 25 V Tj = 150 oC (see test circuit, figure 3)

210

1.31 Charge Reverse Recovery

12.5 Current

ns ns ns

A A

ns

µC

A

Safe Operating Area Thermal Impedance

3/8