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N - CHANNEL ENHANCEMENT MODE
TYPE V
DSS
STE15NA100 1000 V < 0.77 Ω 15 A
R
DS(on)
STE15NA100
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
I
D
■ TYPICAL R
■ HIGH CURRENT POWER MODULE
■ AVALANCHE RUGGED TECHNOLOGY
■ VERY LARGE SOA - LARGE PEAK POWER
DS(on)
= 0.65 Ω
CAPABILITY
■ EASY TO MOUNT
■ SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
■ EXTREMELY LOW Rth (Junction to case)
■ VERY LOW INTERNAL PARASITIC
INDUCTANCE
■ ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS
■ SMPS & UPS
■ MOTOR CONT RO L
■ WELDING EQUIPMENT
■ OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
V
(•) Pulse width limited by safe operating area
February 1998
Drain-source Voltage (VGS = 0) 1000 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC15A
D
I
Drain Current (continuous) at Tc = 100 oC9.5A
D
1000 V
(•) Drain Current (pulsed) 60 A
Total Dissipation at Tc = 25 oC 300 W
tot
Derating Factor 2.4 W/
Storage Temperature -55 to 150
stg
T
Max. Operating Junction Temperature 150
j
Insulation Withhstand Voltage (AC-RMS) 2500 V
ISO
o
C
o
C
o
C
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STE15NA100
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x, δ < 1%)
j
DD
= 50 V)
0.27
0.05
TBD A
TBD mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 500 µA V
D
GS
= 0
1000 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
=0.8x Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
250
1000µAµA
± 200 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 1mA 2.25 3 3.75 V
DS
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID = 7.5 A 0.65 0.77 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
15 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1.0 MHz V
ID = 7.5 A 12 S
= 0 7
GS
600
150
9.1
780
195
nF
pF
pF
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STE15NA100
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Turn-on Time
Rise Time
t
r
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time
Fall Time
t
f
Cross-over Time
c
Source-drain Current
(•)
Source-drain Current
V
= 500 V ID = 7.5 A
DD
RG = 4.7 Ω VGS = 10 V
V
= 800 V ID = 15 A VGS = 10 V 470
DD
V
= 800 V ID = 15 A
DD
= 4.7 Ω VGS = 10 V
R
G
40
55
43
226
110
25
150
56
77
660 nC
154
36
210
15
60
(pulsed)
(∗) Forward On Voltage ISD = 15 A VGS = 0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 15 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
R
1400
42
Charge
Reverse Recovery
60
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/5
STE15NA100
ISOTOP MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H4 0.157
J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193
M 37.8 38.2 1.488 1.503
N4 0.157
O 7.8 8.2 0.307 0.322
mm inch
N
O
G
A
B
D
E
F
H
J
C
K
L
M
4/5
STE15NA100
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronic s. Specificati ons mentioned
in this publication are subject to change without not ice. This publicat ion supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON M icroelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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. . .
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