Derating Factor3.6W/
St orage Temperatur e-55 to 150
stg
T
Max. Operating Junction Temperatur e150
j
Ins ulation Withhstand V o lt age (A C- R M S)2500V
ISO
o
C
o
C
o
C
1/8
STE110NA20
THERMAL DATA
R
thj-case
R
thc-h
AVALANCHE CHARACTERISTICS
Symb o lPara met erM ax ValueUni t
I
AR
E
E
I
AR
Ther mal Resistance Junct ion-caseMax
Ther mal Resistance Case-heatsink Wit h Conduct ive
Gr ease Appli edMax
Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limi t ed by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
Repetitive Avalanche Energy
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width limi t ed by T
max, δ <1%)
j
max, δ <1%)
j
Avalanche Current , Repet it iv e or Not-Repe t it ive
=100oC, p ulse wid t h limited by Tjmax, δ <1%)
(T
c
0.27
0.05
55A
500mJ
175mJ
32.5A
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
SymbolParameterTest Condition sMin.Typ.Max.Unit
V
(BR)DSS
Drain-source
ID=1mA VGS= 0200V
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leaka ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRatingx0.8 Tc= 125oC
V
DS
V
= ± 30 V± 400nA
GS
400
200
ON (∗)
SymbolParameterTest Condition sMin.Typ.Max.Unit
V
GS(th )
R
DS(on)
I
D(on)
Gat e Thre shold Volt age VDS=VGSID=1mA2.2533.75V
St at ic Drain-source On
Resistance
VGS= 10V ID=55A
= 10V ID=55A Tc=100oC
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
110A
0.0150.019Ω
VGS=10V
DYNAMIC
SymbolParameterTest Condition sMin.Typ.Max.Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS=15 VID=55A38S
VDS=25V f=1MHz VGS= 012.9
2870
980
µA
mA
Ω
nF
pF
pF
2/8
STE110NA20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
SymbolParameterTest Condition sMin.Typ.Max.Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=100V ID=55A
=4.7 ΩVGS=10V
R
G
(see test cir cuit, figure 3)
(di/dt)
Tur n-on C urr ent SlopeVDD=160V ID= 110 A
on
R
=47 ΩVGS=10V
G
(see tes t circuit, f igure 5)
Q
Q
Q
Tot al Gat e Charge
g
Gate-Source Charge
gs
Gat e- Drain Charge
gd
VDD=160V ID= 110 A VGS= 10 V470
SWITCHINGOFF
SymbolParameterTest Condition sMin.Typ.Max.Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall T ime
f
Cross-over Time
c
VDD=160VID= 110 A
=4.7 ΩVGS=10V
R
G
(see test cir cuit, figure 5)
SOURCE DRAIN DIODE
70
95
100
125
290A/ µs
600nC
43
226
115
68
160
150
100
210
ns
ns
nC
nC
ns
ns
ns
SymbolParameterTest Condition sMin.Typ.Max.Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
110
440
(pulsed)
(∗)ForwardOnVoltage ISD=110AVGS=01.6V
V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 110 Adi/dt = 100 A/µs
=50VTj=150oC
V
R
(see test cir cuit, figure 5)
625
11
Charge
I
RRM
Reverse Recovery
35
Current
(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating AreaThermalImpedance
A
A
ns
µC
A
3/8
STE110NA20
Derating Curve
TransferCharacteristics
OutputCharacteristics
Transconductance
StaticDrain-source On Resistance
4/8
Gate Charge vs Gate-source Voltage
STE110NA20
CapacitanceVariations
Normalized OnResistance vs Temperature
Normalized GateThreshold Voltage vs
Temperature
Turn-onCurrent Slope
Turn-offDrain-source VoltageSlope
Cross-overTime
5/8
STE110NA20
SwitchingSafe Operating Area
Source-drainDiode Forward Characteristics
AccidentalOverload Area
Fig. 1: UnclampedInductive Load Test Circuit
6/8
Fig. 2: UnclampedInductive Waveform
STE110NA20
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 5: Test CircuitFor Inductive Load Switching
And DIodeRecovery Times
Fig. 4: GateCharge test Circuit
7/8
STE110NA20
Information furnished is believedto be accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use ofsuch informationnor for any infringement of patents or otherrights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject to change without notice.This publication supersedes andreplaces all informationpreviously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for useas criticalcomponents in lifesupportdevicesor systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1995 SGS-THOMSONMicroelectronics - All Rights Reserved
Australia - Brazil- France - Germany - HongKong - Italy- Japan- Korea - Malaysia - Malta - Morocco- The Netherlands -
Singapore- Spain- Sweden - Switzerland- Taiwan - Thailand - United Kingdom- U.S.A
SGS-THOMSONMicroelectronicsGROUPOF COMPANIES
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